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Development of Next Generation Display Using Carbon Nanowalls

使用碳纳米墙开发下一代显示器

基本信息

批准号：
17206006
负责人：
HORI Masaru
金额：
$ 29.12万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2007
项目状态：
已结题

项目摘要

Analysis in the initial phase, and morphology and construction control of carbon nanowalls (CNWs), which are new two-dimensional carbon nanostructures, were investigated for applying the carbon nanowalls to the field emission devices. In addition, hydrogen plasma process, magnesium dioxide coating, and nitrogen doping were carried out to realizing the CNWs with higher field emission properties.By the analysis of initial growth process using a spectroscopic ellipsometer, it was found that the diamond-like carbon (DIE) thin film formed in the early phase, and then carbon nanowalls constructed by graphene sheets grew up. It was confirmed that the average distance between each CNW and the crystallized structure of graphene sheets were dependence on the pressure, the input power, deposition time of CNWs etc. On the basis of these results, we succeeded in control of morphology and structure of CNWs. From the results of investigation about the effect of the morphology of CNWs on the field emission property, the best performance was realized in the case that the ratio of the height of wall to the distance between walls was 1. Moreover the fabrication of CNWs without the thin film grown in the initial phase using a electron beam excited plasma (EBEP), in addition those CNWs were extremely thin, e. g., a few nm, and completely vertical from the bottom to the surface.The field emission properties of the previous CNWs were a threshold voltage of 6.0 V/μm and current density of 2 μA/cm^2. In this study, those properties were improved to 3.7 V/μm and 10 μA/cm^2, respectively, by hydrogen plasma process after CNWs deposition and magnesium dioxide coating on CNWs. Furthermore, the CNWs with nitrogen doping has the higher current density of 〜1 mA/cm^2. These CNWs have a property enough for applying to the field emission devices.

为将碳球应用于场发射器件，研究了新型二维碳纳米结构碳球（CNWs）的初始阶段分析、形貌和结构控制。通过椭圆偏振光谱仪对碳纳米线的生长过程进行分析，发现碳纳米线生长初期先形成类金刚石薄膜，然后由石墨烯片构成碳纳米管。实验结果表明，碳纳米线的平均间距和石墨烯片的结晶结构与压力、输入功率、碳纳米线的沉积时间等因素有关。在此基础上，我们成功地控制了碳纳米线的形貌和结构。从碳纳米线的形貌对场发射性能的影响的研究结果，实现了最佳性能的情况下，壁的高度与壁之间的距离为1。此外，利用电子束激发等离子体（EBEP）在没有初始阶段生长的薄膜的情况下制备CNW，另外这些CNW非常薄，e。例如，在一个实施例中，场发射性能测试结果表明，碳纳米线的阈值电压为6.0 V/μm，场发射电流密度为2 μA/cm^2。在这项研究中，这些性能分别提高到3.7 V/μm和10 μA/cm^2，通过氢等离子体工艺后，碳纳米管沉积和氧化镁涂层碳纳米管。此外，氮掺杂的碳纳米线具有更高的电流密度，为1 mA/cm^2。这些碳纳米线具有足以应用于场发射器件的性质。