Studies of Plasma Etching and Radical Reaction Mechanism Employing Radical Injection Technique

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1. Development of Etching Apparatus Employing Radical Injection TechniqueRadical source was newly developed to generate CF_2 radicals selectively by using pyrolysis of HFPO gas.Radical source was evaluated by infrared laser absorption spectroscopy and so CF_2 radical density was 1x 10^<13>cm^<-3> at 0.67Pa and 900K of the wall of radical source.Therefore, we have successfully developed the CF^2 radical source.2. Controlling of Radical Species and Clarification of Radical Reaction Mechanism Employing Radical Injection TechniqueThe radical source was attached to the ECR etching apparatus and CF_2 radicals were injected into ECR Ar or Ar/H_2 downstream plasma. The fluorocarbon films were analyzed by XPS and FT-IR method.It was found that CF_2 radical was the important precursor for the formation of fluorocarbon films with irradiation of ions.In the case of ECR Ar plasma, fluorine-rich films were formed. Onthe other hand, carbon-rich films were formed in ECR Ar/H_2 plasma.3. High Selectively Etching of SiO_2/Si Employing Radical Injection TechniqueSiO_2/Si Etching was performed by CF_2 radical injection into ECR ECR Ar or Ar/H_2 downstream plasma. With-200V of 400kHz rf biases, the etching selectivity was about 3 in Ar plasma with CF_2 radical injection. On the other hand, the selectivity was infinite in Ar/H_2 plasma.Consequently, we found the high selectively etching of SiO_2/Si was obtained by controlling the CF_2 radicals.