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Studies on large area and low temperature fabrication and reaction dynamics of aligned carbon nanostructures

定向碳纳米结构大面积低温制备及反应动力学研究

基本信息

批准号：
14350019
负责人：
HORI Masaru
金额：
$ 9.15万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

项目摘要

The investigation shown in the following as the fabrication of the vertically aligned carbon nanostructures has been carried out, and it succeeded in the creation of the novel vertically aligned carbon nanostructures.1.Fabrication of carbon nanowalls (CNWs)Two-dimensional carbon nanostructures (carbon nanowalls : CNWs) were fabricated using capacitively coupled plasma radio-frequency plasma-enhanced chemical vapor deposition assisted by H radical injection. In the case of the deposition without H radical injection, CNWs were not fabricated. The morphologies of CNWs were dependent on the types of carbon source gases (C_2F_6,CF_4,CHF_3a,CH_4,etc). CNWs were grown on Si,SiO_2, and stainless steel substrates without catalyst, and independent of substrate materials. It succeeded the fabrication of the CNWs with stripe structure by tilting the substrates.2.Dense carbon nanotubesCarbon nanotubes (CNTs) were synthesized using microwave plasma-enhanced chemical vapor deposition. Co nanoparticles as catalyst were prepared using excimer laser ablation. The density of CNTs with a diameter of approximately 6 nm was controllable by changing the deposition time of Co catalytic nanoparticles. CNTs were grown rapidly during the first 3min of growth, then the growth rate of CNTs decreased markedly. At early stage of growth, the CNTs grew at an extremely high rate of 300 nm/s.3.Growth of carbon nanotubes by atmospheric-pressure plasmaA microwave excited non-equilibrium atmospheric pressure plasma source was developed and applied to chemical vapor deposition of carbon nanotubes (CNTs). Multiwalled CNTs were successfully synthesized at a low temperature of 600℃ by using mixtures of He/H_2/CH_4 and He/H_2/CF_4.

本论文的主要工作如下：1.碳球的制备采用电容耦合等离子体射频等离子体增强化学气相沉积技术，在氢自由基注入的辅助下制备了二维碳纳米结构。在没有H自由基注入的沉积的情况下，没有制造CNW。碳纳米管的形貌与碳源气体（C_2F_6，CF_4，CHF_3a，CH_4等）的种类有关。在无催化剂的条件下，碳纳米线生长在Si、SiO_2和不锈钢衬底上，且与衬底材料无关。2.采用微波等离子体增强化学气相沉积法制备了致密的碳纳米管。采用准分子激光烧蚀法制备了钴纳米粒子催化剂。通过改变Co催化剂纳米颗粒的沉积时间，可以控制直径约为6 nm的碳纳米管的密度。碳纳米管在生长的前3 min内生长迅速，随后碳纳米管的生长速率明显下降。在生长初期，碳纳米管的生长速率高达300 nm/s。3.常压等离子体法生长碳纳米管研制了微波激励非平衡常压等离子体源，并将其应用于碳纳米管的化学气相沉积。采用He/H_2/CH_4和He/H_2/CF_4混合气体在600℃低温下成功合成了多壁碳纳米管。