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Development of high-performance InAs quantum cascade lasers

高性能InAs量子级联激光器的研制

基本信息

批准号：
17206029
负责人：
OHNO Hideo
金额：
$ 23.13万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17206029/
关键词：
Quantum-cascade laser Intersubband transition InAs AlSb THz Mid-infrared 量子カスケードレーザ

项目摘要

In order to develop low-threshold current density, high-power and high-temperature quantum-cascade lasers (QCLs), we fabricated InAs-based QCLs by molecular beam epitaxy and investigated laser characteristics, especially their relationship with the band structure of an active region. The summary of the research results is as follows:1、Low-threshold current density operationWe demonstrated low-threshold current density (0.4 kA/cm^2) operation at liquid-nitrogen temperature by employing InAs/Al_<0.2>Ga_<0.8>Sb superlattice active layers. The emission wavelength was 10 μm, which was in close agreement with the designed wavelength. This is among the lowest threshold current density of QCLs operating in the mid-infrared spectrum region.2、Room-temperature operationWe demonstrated the room-temperature operation of InAs-based QCLs emitting at 8.9 μm. In order to decrease thermal carrier leakage from the active layer, a diagonal intersubband transition was used. The observed threshold current density at 300 K was 12.0 kA/cm^2 and maximum operation temperature was 305 K.3.High-power operationIn order to increase the dynamic range of the operation current, a scheme to increase the doping concentration in the injection layers was employed. The observed room-temperature threshold current density was 4.0 kA/cm^2, which is the lowest threshold current density in InAs-based QCLs. We demonstrated the output optical peak power above 1 W at liquid-nitrogen temperature and 125 mW at room-temperature.4.High-temperature operationStructure dependence on optical gain coefficient and its influence on the maximum operation temperature were investigated. We found that the active layer which exhibits the maximum optical gain coefficient presents the highest operation temperature. The observed maximum operation temperature was +100 ℃, which is the highest operation temperature in InAs-based QCLs.

为了研制低阈值电流密度、高功率、高温度的量子级联激光器，我们采用分子束外延技术制备了InAs基量子级联激光器，并研究了其激光特性，特别是与有源区能带结构的关系。1.、低阈值电流密度工作我们采用InAs/Al_&lt；0.2&gt；Ga_&lt；0.8&gt；Sb超晶格有源层，在液氮温度下实现了低阈值电流密度(0.4kA/cm~2)工作。发射波长为10μm，与设计波长基本一致。这是工作在中红外波段的QCL的最低阈值电流密度之一。2、室温工作我们演示了发射波长为8.9μm的InAs基QCL的室温工作。为了减少有源层的热载流子泄漏，采用了对角的子带间跃迁。在300K下测得阈值电流密度为12.0kA/cm2，最高工作温度为305k3。为了增加工作电流的动态范围，采用了增加注入层掺杂浓度的方案。实验测得的室温阈值电流密度为4.0kA/cm2，是InAs基准分子激光器的最低阈值电流密度。实验结果表明，在液氮温度下，输出光峰值功率大于1W，在室温下达到125 mW。4.研究了高温工作结构对光增益系数的影响及其对最高工作温度的影响。我们发现，具有最大光增益系数的有源层具有最高的工作温度。观察到的最高工作温度为+100℃，这是InAs基准分子激光器的最高工作温度。