Physics and Application of Spin-Related Phenomena in Semiconductors

对半导体量子结构中与自旋相关的现象进行了实验和理论研究，以建立(1)具有明显自旋效应的半导体量子结构的制备工艺，(2)了解此类结构中与自旋相关的现象，以及(3)利用与电子自旋相关的新自由度来实现半导体量子结构的可能应用。为了弥合半导体材料和磁性材料之间的差距，分别于1995年12月20-21日和1997年1月27-28日在东北大学电子通信研究所和仙台国际中心举办了两次研讨会，题为“半导体中与自旋有关的现象的物理和应用研讨会”。(1)磁性材料在Si衬底上的外延生长(2)一种新型的III-V基铁磁稀磁半导体(Ga，Mn)As(3)半导体纳米结构对磁性离子间交换作用的控制(4)自由磁极化子存在的实验验证

Expermental as well as theoretical research on spin related phenomena in semiconductor quantum structures has been conducted in order to establish (1) fabrication processes of semiconductor quantum structures with pronounced spin effects.(2) understanding of the spin related phenomena in such structures, and (3) possible application of the semiconductor quantum structures using the new degree of freedom related to spin of electrons. Two Symposia named "Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors" were held at the Research Institute of Electrical Communication, Tohoku University on December 20-21,1995, and at the Sendai International Center on January 27-28,1997 in an effort to bridge the gap between the Semiconductor Materials and the Magnetic Materials. Following results are among those the research results obtained in the course of the present project.(1) Epitaxial growth of magnetic materials on Si(2) A new III-V based ferromagnetic diluted magnetic semiconductor, (GA,Mn)As(3) Control of exchange interaction among magnetic ions by semiconductor nanostructures(4) Experimental verification of the existence of free magnetic polarons