Physics and Application of Spin-Related Phenomena in Semiconductors
Physics and Application of Spin-Related Phenomena in Semiconductors
批准号:
07305011
负责人:
OHNO Hideo
金额:
$2.82万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996
中文摘要
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英文摘要
Expermental as well as theoretical research on spin related phenomena in semiconductor quantum structures has been conducted in order to establish (1) fabrication processes of semiconductor quantum structures with pronounced spin effects.(2) understanding of the spin related phenomena in such structures, and (3) possible application of the semiconductor quantum structures using the new degree of freedom related to spin of electrons. Two Symposia named "Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors" were held at the Research Institute of Electrical Communication, Tohoku University on December 20-21,1995, and at the Sendai International Center on January 27-28,1997 in an effort to bridge the gap between the Semiconductor Materials and the Magnetic Materials. Following results are among those the research results obtained in the course of the present project.(1) Epitaxial growth of magnetic materials on Si(2) A new III-V based ferromagnetic diluted magnetic semiconductor, (GA,Mn)As(3) Control of exchange interaction among magnetic ions by semiconductor nanostructures(4) Experimental verification of the existence of free magnetic polarons
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F.Matsukura: "Growth and properties of (Ga, Mn) As : a new III-V diluted magnetic semiconductor" Applied Surface Science. (accepted for publication). (1997)
F.Matsukura:“(Ga, Mn) As 的生长和特性:一种新的 III-V 稀磁半导体”应用表面科学。
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通讯作者:
H.Ohno: "Mn-Based III-V Diluted Magnetic (Semimagnetic)Semiconductors" Materials Science Forum. 182-184. 443-450 (1995)
H.Ohno:“锰基 III-V 稀磁(半磁)半导体”材料科学论坛。
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K.Akeura,M.Tanaka,et al.: "Epitaxial ferromagnetic MnAs thin films grown by molecular beam epitaxy on si(001)substrates" Appl.Phys.Lett.67. 3349 (1995)
K.Akeura、M.Tanaka 等人:“通过分子束外延在 si(001) 衬底上生长外延铁磁 MnAs 薄膜”Appl.Phys.Lett.67。
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Y.Iye: "Magnetotransport in modulated magnetic fields" Physica B. 227. 122-126 (1996)
Y.Iye:“调制磁场中的磁输运”Physica B. 227. 122-126 (1996)
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S.Adachi: "Ultrafast optical sampling spectroscopy of exciton dynamics in quantum wells" Prog.Crystal Growth and Charact. 33. 3307-3310 (1996)
S.Adachi:“量子阱中激子动力学的超快光学采样光谱”Prog.Crystal Growth and Charact。
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共 16 条
Control of carrier dimensionality in InAs quantum cascade lasers and its effect on laser characteristics
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批准号:19206033
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$21.8万
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财政年份:2007
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负责人:OHNO Hideo
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依托单位:
Development of high-performance InAs quantum cascade lasers
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批准号:17206029
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$23.13万
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财政年份:2005
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负责人:OHNO Hideo
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依托单位:
Spin coherence of electrons and its control in semiconductor quantum structures
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批准号:12305001
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$27.75万
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财政年份:2000
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负责人:OHNO Hideo
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依托单位:
Far-infrared〜THz light emitter based on InAs/GaSb quantam cascade structures
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批准号:11355012
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项目类别:Grant-in-Aid for Scientific Research (A).
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资助金额:$17.34万
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财政年份:1999
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负责人:OHNO Hideo
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依托单位:
Growth Dynamics and Properties of Compound Semiconductor Layers Prepared by Low Temperature Molecular Beam Epitaxy
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批准号:10450002
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.77万
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财政年份:1998
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负责人:OHNO Hideo
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依托单位:
Electronic Properties of Spin Controlled Semiconductor Nanostructures
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批准号:09244103
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$107.84万
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财政年份:1997
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负责人:OHNO Hideo
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依托单位:
Carrier induced ferromagnetism and its control in III-V diluted magnetic semiconductors
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批准号:08455002
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.8万
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财政年份:1996
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负责人:OHNO Hideo
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依托单位:
Diluted Magnetic Semiconductor Based Memory Devices
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批准号:07555095
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$5.31万
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财政年份:1995
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负责人:OHNO Hideo
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依托单位:
Quantum Structure Long-wavelength Light Emitting Devices Using Heterojunction Energy Filters
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批准号:05555083
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$7.1万
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财政年份:1993
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负责人:OHNO Hideo
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依托单位:
Growth and Characterization of Diluted Magnetic III-V Compound Semiconductors
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批准号:02452142
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.54万
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财政年份:1990
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负责人:OHNO Hideo
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依托单位:
海外基金