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Basic research of an efficient THz emitting device using an intersubband transition in a quantum dot

利用量子点子带间跃迁的高效太赫兹发射器件的基础研究

基本信息

批准号：
11450123
负责人：
NODA Susumu
金额：
$ 5.25万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450123/
关键词：
Quantum dot Intersubband transition THz radiation Molecular beam epitaxy Stacked quantum dots Carrier relaxation dynamics Monte Carlo simulation テラヘルツ電磁波フォノンボトルネック偏光フォトルミネッセンス

项目摘要

(1) The purpose of this research project is to apply an intersubband transition in a quantum dot, of which transition energy is in a photon energy range of THz electro magnetic radiation, to an efficient light emitting source for THz radiation.(2) Theoretical analysis of quantized levels formed in a quantum dot, which consists of InAs dot grown on GaAs substrate, is carried out by considering the pyramidal shape of the dot and internal strain distribution due to the lattice mismatch between InAs and GaAs. The energy of the levels and the polarization of the transition between the levels has been calculated by three dimensional analysis of the wave function.(3) The examination of the growth method/condition of quantum dot was investigated by considering the THz radiation efficiency. The MBE method has been shown to useful since the distribution in size is comparatively small, as a result of the comparison between the OMVPE and MBE method.(4) Interband transition of the quantum dot, whic … More h is fabricated by the above method, was investigated by using polarization resolved photo luminescence method. By comparing the measured result with the theoretical analysis, we distinguished the energy and symmetry of the quantized levels formed in the dot.(5) We succeeded in the observation of the THz electromagnetic wave associated with the intersubband transition in a quantum dot for the first time, by injecting electron hole pairs into a PIN photodiode, of which insulator layer is consist of quantum dots. The result agreed well with the emission efficiency simulated by Monte-Carlo method.(6) Furthermore, we proposed a cascade injection of electrons into stacked quantum dots for the improvement of THz emission efficiency. Numerical simulations were carried out by considering a carrier relaxation dynamics between quantized levels. It has been shown that the emission efficiency is improved by a factor of 5 compared to the device based on the electron hole pair injection. It has been also shown that a population inversion can be formed in the device based on the cascade injection. Less

(1)本研究课题的目的是将跃迁能量在THz电磁辐射的光子能量范围内的量子点的子带间跃迁应用于THz辐射的高效发光源。(2)本文对生长在GaAs衬底上的InAs量子点的量子化能级进行了理论分析，考虑了量子点的金字塔形状和InAs与GaAs晶格失配引起的内部应变分布。通过对波函数的三维分析，计算了能级的能量和能级间跃迁的极化。(3)考虑到太赫兹辐射效率，研究了量子点的生长方法/条件的检查。MBE方法已被证明是有用的，因为尺寸分布相对较小，作为OMVPE和MBE方法之间的比较的结果。(4)量子点的带间跃迁， ...更多信息 h的样品，用偏振分辨光致发光方法对其进行了研究。通过测量结果与理论分析的比较，我们区分了量子点中形成的量子能级的能量和对称性。(5)通过在绝缘层为量子点的PIN光电二极管中注入电子空穴对，我们首次成功地观测到了量子点中与子带间跃迁相关的太赫兹电磁波。计算结果与用蒙特-卡罗方法模拟的发射效率吻合较好。(6)此外，我们提出了一种级联注入电子到堆叠的量子点，以提高太赫兹发射效率。通过考虑量子化能级之间的载流子弛豫动力学进行了数值模拟。已经表明，与基于电子空穴对注入的器件相比，发射效率提高了5倍。它也已被证明，可以在基于级联注入的设备中形成的粒子数反转。少