Quantum Structure Long-wavelength Light Emitting Devices Using Heterojunction Energy Filters

使用异质结能量滤波器的量子结构长波长发光器件

• 批准号: 05555083
• 负责人: OHNO Hideo
• 金额: $ 7.1万
• 依托单位: TOHOKU UNIVERSITY (1994)Hokkaido University (1993)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555083/
• 关键词: compound semiconductor; quantum structure; subband; optical transition; long-wavelength light; InAs; GaAs; GaSb; サブバンド間遷移; エルAs; ヘテロ構造; 分子線エピタキシ; 共鳴トンネルダイオード

Research on the basic properties of the inter-subband optical transition in compound semiconductor quantum structures was carried out to gain the understanding required to realize long-wavelength light emitting devices utilizing the inter-subband optical transitions.The following two quantum structures were investigated theoretically and both are shown to be able to be used to realize long-wavelength LED's : (1) InAs/AlSb/GaSb quantum structures in which all the electrons pass through the structure undergo inter-subband transition, and (2) energy filter structures utilizing more mature AlGaAs/GaAs systems. Population inversion was also shown to be realized by the two structures even under the fast nonradiative relaxation by optical phonons.On the experimental side, AlGaAs/GaAs structures were grown and the inter-subband absorption under electric fields was measured to clarify the effect of electric field on the transition. It was found that the absorption energy shifted toward low energy when carrier concentration in the well was high, whereas it shifted toward high energy when carrier concentration was low (Stark shift).Experiments are under way to experimentally realize the LED's based on the inter-subband transitions in these structures.

本文对化合物半导体量子结构中子带间光学跃迁的基本性质进行了研究，以获得利用子带间光学跃迁实现长波长发光器件所需的认识。理论上研究了以下两种量子结构，并表明它们都可以用于实现长波长LED：（1）InAs/AlSb/GaSb量子结构，其中所有通过该结构的电子经历子带间跃迁，以及（2）利用更成熟的AlGaAs/GaAs系统的能量过滤器结构。在实验方面，生长了AlGaAs/GaAs结构，测量了电场作用下的子带间吸收，研究了电场对跃迁的影响。发现当阱中载流子浓度高时，吸收能向低能方向移动，而当阱中载流子浓度低时，吸收能向高能方向移动（斯塔克位移）。

项目成果

H.Ohno: "Intersubband Population Inversion in Tunneling Heterostructures" Trans.Mat.Res.Soc.of Japan. 19A. 47-52 (1994)

H.Ohno：“隧道异质结构中的子带间粒子数反演”Trans.Mat.Res.Soc.of Japan。

H.Ohno: "Intersubband Population Inversion in Tunneling Heterostructures" Trans.Mat.Res.Soc.of Japan. vol.19A. 47-52 (1994)

H.Ohno：“隧道异质结构中的子带间粒子数反演”Trans.Mat.Res.Soc.of Japan。

H.Ohno: "Inter-Subband Population Inversion in Tunneling Heterostructures" Trans.materials.Research Soc.of Japan. 19A. 47-52 (1994)

H.Ohno：“隧道异质结构中的子带间粒子数反演” Trans.materials.Research Soc.of Japan。

H.Ohno: "Inter-subband population inversion in tunneling heterostructures" Proc.of Int.Conf.on Advanced Materials. (掲載決定済).

H.Ohno：“隧道异质结构中的子带间粒子数反转”Proc.of Int.Conf.on Advanced Materials（已出版）。