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Far-infrared〜THz light emitter based on InAs/GaSb quantam cascade structures

基于InAs/GaSb量子级联结构的远红外〜太赫兹光发射器

基本信息

批准号：
11355012
负责人：
OHNO Hideo
金额：
$ 17.34万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A).
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11355012/
关键词：
InAs GaSb quantum cascade structure quantum well structure subband laser electroluminescence far-infrared THz

项目摘要

Far-infrared〜THz intersubband light emitters based on InAs/GaSb quantum cascade structures were investigated theoretically and experimentally. In order to realize high efficiency light emitter, intersubband electroluminescence was characterized by step-scan Fourier transform infrared spectrometer(FT-IR) and low-temperature cryostat.The summary of the research results are :1. Calculated threshold current density of type-II InAs/GaSb intersubband emitter showed that it was about one-fifth as small as that of type-I GaAs/AlGaAs and GaInAs/AlInAs systems.2. Intersubband electroluminescence from InAs/AlSb quantum cascade structures having large tunability of emission wavelength was observed for the first time.3. Temperature and structure dependence of intersubband electroluminescence was instigated by step-scan FT-IR and low-temperature cryostat. Calculated subband structures were found to be in close agreement with extperimental results.4. Optical properties of InAs/AlSb multi-quantum wells epitaxially grown on GaAs substrates with a buffer layer were shown to be dependent on the type of the interface bond and buffer layer material. X-ray diffraction measurements revealed that lattice matching between the average lattice constant of multi-quantum well and the buffer layer plays a key role in determining the optical properties.5. Carrier recycling in type-II InAs/GaSb quantum cascade structures was investigated. It has been observed that the emission power was proportional to the periods of cascade structures, which indicated that injected carriers were recycled in type-II cascade structures.6. The new type-II InAs/GaSb light emitting structures was proposed. Theoretical calculation showed that new structures could emit electro-magnetic waves in the THz region without going to an extreme design.

对基于InAs/GaSb量子级联结构的远红外THz子带间发光器件进行了理论和实验研究。为了实现高效率的发光体，采用步进扫描傅里叶变换红外光谱仪（FT-IR）和低温恒温器对该材料的子带间电致发光进行了表征。计算了II型InAs/GaSb子带间发射极的阈值电流密度，其值约为I型GaAs/AlGaAs和GaInAs/AlInAs系统的五分之一.首次观察到了发光波长可调谐的InAs/AlSb量子级联结构的子带间电致发光.利用步进扫描红外光谱和低温恒温器研究了亚带间电致发光的温度和结构依赖性。计算的子带结构与实验结果吻合较好.研究表明，在带有缓冲层的GaAs衬底上外延生长的InAs/AlSb多量子威尔斯的光学性质取决于界面键和缓冲层材料的类型。X射线衍射测量表明，多量子阱的平均晶格常数与缓冲层的晶格匹配对决定其光学性能起着关键作用.研究了第二类InAs/GaSb量子级联结构中的载流子再循环。实验结果表明，发射功率与级联结构的周期成正比，说明注入载流子在II型级联结构中被循环利用.提出了一种新型的II型InAs/GaSb发光结构。理论计算表明，新结构可以发射太赫兹区域的电磁波，而无需进行极端设计。