Fabrication and its device application of battery-driven diamond cold cathode utilizing negative electron affinity

负电子亲和力电池驱动金刚石冷阴极的制备及其器件应用

基本信息

  • 批准号:
    10555011
  • 负责人:
  • 金额:
    $ 7.94万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1998
  • 资助国家:
    日本
  • 起止时间:
    1998 至 2001
  • 项目状态:
    已结题

项目摘要

Mold-based technique for obtaining pyramidal-shape diamond was proposed and with new nitrogen(N) doping technique using urea, extremely low-threshold electron emission has been confirmed. In order to understand the emission mechanism, energy distribution of the emitted electrons were measured and we found that the emitted electrons have the energy level of about EF. The dependence of the injection metal contacts on the electron emission were discussed, and the "space charge interlayer model" was proposed. The most probable mechanism has been proposed using "metal-insulator-vacuum-type electron emission" model which is consistent with most of the experimental results, and its confirmation has also demonstrated. There were numbers of reports concerning the electron emission from boron (B) -doped diamond, and invited paper has appeared in Trans. IEICE J81-C-II, 180-190, 1998. In this project, although there remains few problems which should be solved before the practical applications, the electron emission mechanism of N-doped diamond which exhibits extremely low-threshold, has been clarified in 4-year term and summarized in 15 research papers.
提出了基于模具的获得金刚石形状的技术,并且利用使用尿素的新的氮(N)掺杂技术,已经证实了极低阈值的电子发射。为了理解发射机制,我们测量了发射电子的能量分布,发现发射电子的能级约为EF。讨论了注入金属接触对电子发射的影响,提出了“空间电荷层间模型”。采用“金属-绝缘体-真空型电子发射”模型提出了最可能的机制,该机制与大多数实验结果一致,并得到了证实。关于掺硼(B)的金刚石的电子发射有许多报道,邀请的论文已经出现在1998年的《国际电子工程师学会学报》(Trans. IEICE)J81-C-II,180- 190中。在本项目中,虽然在实际应用之前需要解决的问题很少,但在4年的时间里,已经阐明了具有极低阈值的N掺杂金刚石的电子发射机制,并在15篇研究论文中进行了总结。

项目成果

期刊论文数量(90)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Yamada, A.Sawabe, K.Okano, S.Koizumi, J.Itoh: "Formation of backcontacts on diamond electron emtters"Applied Surface Science. 146. 245-250 (1999)
T.Yamada、A.Sawabe、K.Okano、S.Koizumi、J.Itoh:“金刚石电子发射体上背接触的形成”应用表面科学。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
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  • 通讯作者:
T.Yamada, A.sawabe, S.Koizumi, J.Itoh and K.Okano: "Uniform electron emission from nitogen-doped diamond-based electron emitter fabricated by sintering technique"IEEE Electron Device Lett.. 21. 531-533 (2000)
T.Yamada、A.sawabe、S.Koizumi、J.Itoh 和 K.Okano:“通过烧结技术制造的氮掺杂金刚石基电子发射器的均匀电子发射”IEEE Electron Device Lett.. 21. 531-533 (
  • DOI:
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    0
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  • 通讯作者:
H.Maeda, T.Ifuku, S.morooka, A.Kato, K.Okano and T.Yamada: "Formation of heteroepitaxially oriented (100) diamond thin films and their field emission properties"Diamond Films & Tech.. 8. 331-336 (1998)
H.Maeda、T.Ifuku、S.morooka、A.Kato、K.Okano 和 T.Yamada:“异质外延取向 (100) 金刚石薄膜的形成及其场发射特性”金刚石薄膜
  • DOI:
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  • 影响因子:
    0
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  • 通讯作者:
T.Yamada et.al: "″Formation of backcontacts on diamond electron emitlers″" Appl.Surface Sci.accepted for publication.
T.Yamada 等人:““金刚石电子发射器上背接触的形成””Appl.Surface Sci. 已接受发表。
  • DOI:
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  • 影响因子:
    0
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S.R.P.Silva et.al.: "″Modeling of the electron field emission process in polycrystalline diamond and diamond-like carbon thin films″" J.Vae.Sci.& Tech.B. 17. 1-5 (1999)
S.R.P.Silva 等人:““多晶金刚石和类金刚石碳薄膜中的电子场发射过程的建模””J.Vae.Sci.& Tech.B. 17. 1-5 (1999)
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    0
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OKANO Ken其他文献

OKANO Ken的其他文献

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{{ truncateString('OKANO Ken', 18)}}的其他基金

Fabrication of long-lifetime and low-cost solar cells usingamorphous selenium
使用非晶硒制造长寿命、低成本的太阳能电池
  • 批准号:
    21560053
  • 财政年份:
    2009
  • 资助金额:
    $ 7.94万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Stabilization of a diamond cold cathode and its application to ultra high sensitive photodetector
金刚石冷阴极的稳定性及其在超高灵敏光电探测器中的应用
  • 批准号:
    13305006
  • 财政年份:
    2001
  • 资助金额:
    $ 7.94万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)

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氮掺杂碳催化剂的功能阐明及其在能源材料中的应用
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SBIR 第一阶段:新型氮掺杂碳支撑催化剂对 Covid-19 替代物的抗病毒活性
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    2032653
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氮掺杂碳催化剂的功能表征和自下而上合成
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在氮掺杂 GaAs(001) 表面上生长的 InAs 量子点的发射波长扩展至 1.5 微米
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氮掺杂碳作为具有多种功能的无金属催化剂的制备。
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