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Study on Polycrystalline Photonics, by Using III-V Nitrides Grown on Amorphous and Polycrystalline Substrates

利用非晶和多晶衬底上生长的 III-V 族氮化物研究多晶光子学

基本信息

批准号：
11450015
负责人：
ASAHI Hajime
金额：
$ 4.93万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

项目摘要

Polycrystalline GaN layers were grown on quartz glass substrates by gas source MBE with plasma-excited N2, and it was found that the photoluminescence (PL) emission was as strong as those of single crystalline GaN grown on sapphire substrates by MOVPE. Both n- and p-type doping was achieved and we suggested the possibility of the fabrication of low cost and large area photonic devices. For the polycrystalline GaN pn junctions, the diode characteristics were confirmed. It was found that the origin of the PL emission from the polycrystalline GaN is excitonic transition. We have grown GaN on Mo, W, Ta and Nb metal substrates and observed strong PL emission. It was found that the polycrystalline GaN/metal junctions showed Schottky or ohmic characteristics depending on the difference in the work-function between GaN and metals. By growing GaN layers on glass and metal substrates with ammonia source, much more strong PL emission was obtained. We confirmed the diode characteristics for the GaN/metal pn junctions. These results show the possibility of the fabrication of flexible GaN devices. We also observed strong PL from the polycrystalline GaN grown on magnetic oxide LaSrMnO3 substrates, which shows the possibility of novel functional device fabrications. We also observed good electric-field electron-emission properties for the polycrystalline GaN on metal substrates. Applications to the high performance display devices are expected.

采用等离子体激发的N2气体源分子束外延技术在石英玻璃衬底上生长了GaN多晶层，发现其光致发光（PL）发射与MOVPE法在蓝宝石衬底上生长的GaN单晶一样强。实现了n型和p型掺杂，并提出了制造低成本和大面积光子器件的可能性。对于多晶GaN pn结，二极管特性得到证实。结果表明，GaN多晶的PL发射是由激子跃迁引起的。我们已经在Mo、W、Ta和Nb金属衬底上生长了GaN，并观察到了强的PL发射。结果发现，多晶GaN/金属结显示肖特基或欧姆特性取决于GaN和金属之间的功函数的差异。通过在玻璃和金属衬底上以氨为源生长GaN层，获得了更强的PL发射。我们确认了GaN/金属pn结的二极管特性。这些结果表明，柔性GaN器件的制造的可能性。我们还观察到强大的PL从磁性氧化物LaSrMnO 3衬底上生长的多晶GaN，这表明新的功能器件制造的可能性。我们还观察到良好的电场电子发射性能的多晶GaN在金属衬底上。期望应用于高性能显示设备。