Study on Temperature-independent Lasing Wavelength Semiconductor Laser Diodes by Using T1-containing III-V Semiconductors

采用含T1 III-V族半导体的温度无关激光波长半导体激光二极管的研究

• 批准号: 11555004
• 负责人: ASAHI Hajime
• 金额: $ 4.03万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555004/
• 关键词: III-V alloy semiconductors; T1-containing semiconductors; Bandgap; Temperature-independent; Gss source MBE; Photoluminescence; Semiconductor Laser Diode; WDM optical fiber communication; フォルトミネッセンス; 半導体レーザー

Laser diodes (LDs), which operate without changing wavelength irrespective of ambient temperature variation, are important for WDM optical fiber communication system. We proposed new alloy semiconductors, T1InGaAs and T1InGaP, for temperature-stable wavelength LDs. We succeeded in the growth of these new semiconductors on InP substrates at 440-450 ℃ by gas source MBE. The T1 composition was confirmed to increase with T1 flux during growth. The bandgap energies and their temperature variations decreased with increasing T1 composition, as we expected. Especially, for the T1InGaAs with T1 composition of 13%, we observed very small temperature variation of PL peak wavelength of 0.04 nm/K, which is much smaller than that (0.1 nm/K) of the lasing wavelength of InGaAsP/InP-DFB LDs. We observed similar small temperature variation of the EL peak energy for the T1InGaAs/InP DH LDs and realized the room temperature pulsed operation. The threshold current density was 5 kA/cm^2 and the T0 value was 85K. We, furthermore, proposed TlInGaAsN and TlInGaPN for the application to temperature-stable wavelength and threshold current LDs and the preliminary result was obatined; growth of T1InGaAs on GaAs and red-shift of P1 peak energy with T1 composition).

半导体激光器（LD）是波分复用光纤通信系统中的重要器件，其工作波长不受环境温度变化的影响。我们提出了新的合金半导体，T1 InGaAs和T1 InGaP，温度稳定的波长LD。我们在440-450 ℃下用气源分子束外延在InP衬底上成功地生长了这些新的半导体。T1组合物被证实在生长过程中随着T1通量增加。带隙能量和它们的温度变化随T1组分的增加而减小，正如我们所预期的那样。特别是对于T1组分为13%的T1 InGaAs，我们观察到PL峰值波长的温度变化很小，为0.04nm/K，远小于InGaAsP/InP-DFB LD的激射波长的温度变化（0.1nm/K）。在T1 InGaAs/InP双异质结LD中，我们观察到了类似的小的电致发光峰值能量的温度变化，并实现了室温脉冲工作。阈值电流密度为5 kA/cm^2，T0值为85 K。此外，我们还提出了TlInGaAsN和TlInGaPN在温度稳定波长和阈值电流LD中的应用，并得到了初步结果：T1 InGaAs在GaAs上的生长和P1峰能量随T1组分的红移。

项目成果

Y.K.Zhou: "Gas source MBE growth Tl-based III-V semiconductors and their Raman scattering characterization"J. Cryst. Growth. 209. 547-551 (2000)

周Y.K.周：“气源MBE生长Tl基III-V族半导体及其拉曼散射表征”J.

H. Asahi, K. Konishi, O. Maeda, A. Ayabe, H.J. Lee, A. Mizobata, K. Asami and S. Gonda: "Gas source MBE growth of T1InGaAs/InP DH structures for the application to WDM optical fiber communication systems"J. Cryst. Growth. 227/228. 307-312 (2001)

H. Asahi、K. Konishi、O. Maeda、A. Ayabe、H.J. Lee、A. Mizobata、K. Asami 和 S. Gonda：“T1InGaAs/InP DH 结构的气源 MBE 生长应用于 WDM 光纤通信

H.J. Lee, K. Konishi, O. Maeda, A. Mizobata, K. Asami and H. Asahi: "Temperature-stable wavelength T1InGaAs/InP double heterostructure light-emitting diodes grown by gas source molecular beam epitaxy"Jpn. J. Appl. Plays.. 41(2B). 1168-1170 (2002)

H.J. Lee、K. Konishi、O. Maeda、A. Mizobata、K. Asami 和 H. Asahi：“通过气源分子束外延生长的温度稳定波长 T1InGaAs/InP 双异质结构发光二极管”Jpn。

H.J.Lee: "Gas source MBE growth of TlInGaAs layers on GaAs substrates"Jpn. J. Appl. Phys.. 41(2B). 1016-1018 (2002)

H.J.Lee：“GaAs 衬底上 TlInGaAs 层的气源 MBE 生长”Jpn。

H.Asahi: "Gas source MBE growth of TlInGaAs/InP DH structures for the application to WDM optical fiber communication systems"J.Crystal Growth. (in press). (2001)

H.Asahi：“用于 WDM 光纤通信系统的 TlInGaAs/InP DH 结构的气源 MBE 生长”J.Crystal Growth。