Study on the Physical Properties of Ferromagnetic Nitride Semiconductor Quantum Nanostructures and their Device Application

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In the multi-quantum well(MQW) structures consisting of rare-earth atom doped magnetic nitride semiconductor and non-magnetic nitride semiconductor, enhanced magnetization was observed. By Si co-doping, further enhancement was observed. These enhancements are understood by the effect of carrier increase in the magnetic semiconductor layers and the enhancement in the interaction between carrier spin and magnetic atom spin. In this MQW sample, large energy shift of photoluminescence(PL) peak was observed due to the magnetic atom doping effect. The possibility of the control of easy magnetization axis was demonstrated. The quantum disk structures and circular-polarized light emitting diode structures were grown and PL emission was observed.