Study of injection of spin - polarized electrons into semiconductors through ferromagnetic metal
Study of injection of spin - polarized electrons into semiconductors through ferromagnetic metal
批准号:
11450023
负责人:
KAWAGUCHI Hitoshi
金额:
$9.47万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2001
中文摘要
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英文摘要
We investigated mainly the following four topics to create new nonlinear optical functional devices based on the pitchfork bifurcation bistable operation of vertical-cavity surface-emitting lasers (VCSELs) and injection of spin-polarized electrons.(1) We studied the bistable switching between the two orthogonal polarization mode existing in the VCSEL with a squared shape waveguide. The relative magnitude of self- and cross-saturation coefficients are crucial to determine the characteristics of polarization switching of laser diodes. The numerical calculation confirmed that the relation between self- and cross saturation coefficients satisfies the condition for polarization bistability in both balk and quantum well active layers. The bistable conduction is satisfied in the wider region for a compressively strained quantum well, especially in the region with large linear gains.(2) All-optical signal processing, such as demultiplexing with a signal bit width conversion function and the conversion between RZ and NRZ formats, were experimentally demonstrated using a polarization bistable VCSEL. We have shown by our simulations that the 3R function (Retiming, Reshaping, and Regenerating) can be obtained using a such VCSEL.(3) We estimated the spin relaxation time of the electrons drifting through the p-n junction from the time- and polarization- resolved photoluminescence. The result showed that the polarization fairly maintained during the drift.(4) We fabricated the light emitting diode (LED) with an n-side electrode made of ferromagnetic metal, CoCr. However, the light output from LED was unpolarized. This result points out that the polarized electrons may be de-polarized at the interface between GaAs and CoCr.
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Masahiro Iwamoto、Yutaka Takahashi、Yuichi Kawamura、Hitoshi Kawaguchi:“光激发自旋极化电子的自旋输运弛豫特性”2001 年第 48 届春季应用物理会议论文集第 3 卷 28P-YD-7 .1335 (2001)。
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作者:
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通讯作者:
Y. Takahashi and H. Kawaguchi: "Polarization dependent nonlinear optical gains in semiconductor quantum-well lasers"Extended Abstracts (The 60th Autumn Meeting, 1999); The Japan Society of Applied Physics. 3p-ZB-17. 1016
Y. Takahashi 和 H. Kawaguchi:“半导体量子阱激光器中的偏振相关非线性光学增益”扩展摘要(第 60 届秋季会议,1999 年);
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H.Kawaguchi, Y.Yamayoshi, K.Tamura: "All-optical demultiplexing using an ultrafast polarization bistable vertical-cavity surface-emitting laser"ECOC'99. II. 268-269 (1999)
H.Kawaguchi、Y.Yamayoshi、K.Tamura:“使用超快偏振双稳态垂直腔表面发射激光器的全光解复用”ECOC99。
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田村和丈,山吉康弘,河口仁司: "超高速偏光双安定面発光半導体レーザを用いた全光型信号処理"信学技報. LQE2000-42. 25-30 (2000)
Kazutake Tamura、Yasuhiro Yamayoshi、Hitoshi Kawaguchi:“使用超快偏振双稳态表面发射半导体激光器的全光信号处理”IEICE 技术报告 LQE2000-42 (2000)。
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H.Kawaguchi,Y.Yamayoshi,and K.Tamura: "All-Optical RZ to NRZ Format Conversion Using an Ultrafast Polarization Bistable Vertical-Cavity Surface-Emitting Laser"IEEE Lasers and Electro-Optics Society 2000 Annual Meeting LEOS 2000. Vol.2. 575-676 (2000)
H.Kawaguchi、Y.Yamayoshi 和 K.Tamura:“使用超快偏振双稳态垂直腔表面发射激光器进行全光 RZ 到 NRZ 格式转换”IEEE 激光和电光协会 2000 年年会 LEOS 2000。
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共 62 条
Highly functional semiconductor nanophotonic devices and their applications for photonic RAM
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批准号:24226011
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项目类别:Grant-in-Aid for Scientific Research (S)
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资助金额:$82.45万
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财政年份:2012
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Creation of spin-photonic devices
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批准号:23656240
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.5万
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财政年份:2011
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Multi-bit polarization bistable optical memory operating in the optical fiber transmission wavelength range
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批准号:21360034
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.81万
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财政年份:2009
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负责人:KAWAGUCHI Hitoshi
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依托单位:
All-optical signal processing using polarization bistable VCSELs
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批准号:17068003
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$41.92万
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财政年份:2005
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Study of ultrafast optical buffer memory using long wavelength VCSELs
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批准号:16360025
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.73万
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财政年份:2004
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Study of ultrafast optical signal processing using polarization bistable VCSELs
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批准号:14350027
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.82万
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财政年份:2002
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Study of four-wave mixing in semiconductor optical amplifiers
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批准号:11694125
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.04万
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财政年份:1999
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Study of ultrafast all-optical flip-flop operation with vertical-cavity surface-emitting lasers
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批准号:08455029
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.8万
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财政年份:1996
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Study on ultra-fast nonlinear optical functional devices
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批准号:07555010
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$6.21万
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财政年份:1995
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Study on ultra-fast optical memories using semiconductor lasers
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批准号:06452125
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.35万
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财政年份:1994
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Development of shot Optical pulse generators using semiconductor lasers
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批准号:04555010
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$12.22万
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财政年份:1992
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Research on ultra-fast optical bistable devices with multi-dimentional quantum well structure
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批准号:01460081
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.26万
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财政年份:1989
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负责人:KAWAGUCHI Hitoshi
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依托单位:
海外基金