Study of injection of spin - polarized electrons into semiconductors through ferromagnetic metal
自旋极化电子通过铁磁金属注入半导体的研究
基本信息
- 批准号:11450023
- 负责人:
- 金额:$ 9.47万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:1999
- 资助国家:日本
- 起止时间:1999 至 2001
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We investigated mainly the following four topics to create new nonlinear optical functional devices based on the pitchfork bifurcation bistable operation of vertical-cavity surface-emitting lasers (VCSELs) and injection of spin-polarized electrons.(1) We studied the bistable switching between the two orthogonal polarization mode existing in the VCSEL with a squared shape waveguide. The relative magnitude of self- and cross-saturation coefficients are crucial to determine the characteristics of polarization switching of laser diodes. The numerical calculation confirmed that the relation between self- and cross saturation coefficients satisfies the condition for polarization bistability in both balk and quantum well active layers. The bistable conduction is satisfied in the wider region for a compressively strained quantum well, especially in the region with large linear gains.(2) All-optical signal processing, such as demultiplexing with a signal bit width conversion function and the conversion between RZ and NRZ formats, were experimentally demonstrated using a polarization bistable VCSEL. We have shown by our simulations that the 3R function (Retiming, Reshaping, and Regenerating) can be obtained using a such VCSEL.(3) We estimated the spin relaxation time of the electrons drifting through the p-n junction from the time- and polarization- resolved photoluminescence. The result showed that the polarization fairly maintained during the drift.(4) We fabricated the light emitting diode (LED) with an n-side electrode made of ferromagnetic metal, CoCr. However, the light output from LED was unpolarized. This result points out that the polarized electrons may be de-polarized at the interface between GaAs and CoCr.
本论文主要研究了以下四个方面的内容,即基于垂直腔面发射激光器(VCSEL)的音叉分叉和自旋极化电子注入的非线性光学功能器件。(1)本文研究了方形波导VCSEL中两个正交偏振模之间的偏振态转换。自饱和系数和交叉饱和系数的相对大小是决定半导体激光器偏振开关特性的关键。数值计算证实了自饱和系数和交叉饱和系数之间的关系满足量子阱和量子阱有源层中的偏振双稳条件。对于压缩应变量子阱,在较宽的区域内,特别是在具有大线性增益的区域内,均满足双折射导电。(2)利用偏振模色散VCSEL进行了全光信号处理的实验研究,如信号位宽转换功能的解复用以及RZ和NRZ格式之间的转换。我们已经通过我们的模拟表明,可以使用这样的VCSEL获得3R功能(重定时、整形和再生)。(3)我们从时间分辨和偏振分辨的光致发光中估算了漂移通过p-n结的电子的自旋弛豫时间。结果表明,在漂移过程中,偏振态得到了较好的保持。(4)我们制作的发光二极管(LED)的n侧电极由铁磁金属,钴铬。然而,从LED输出的光是非偏振的。这一结果指出,极化电子可能是退极化GaAs和CoCr之间的界面。
项目成果
期刊论文数量(142)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
岩本昌熙, 高橋豊, 川村裕一, 河口仁司: "光励起スピン偏極電子のスピン輸送緩和特性"平成13年度春季第48回応用物理学関係連合講演会 講演予稿集. 分冊3 28P-YD-7. 1335 (2001)
Masahiro Iwamoto、Yutaka Takahashi、Yuichi Kawamura、Hitoshi Kawaguchi:“光激发自旋极化电子的自旋输运弛豫特性”2001 年第 48 届春季应用物理会议论文集第 3 卷 28P-YD-7 .1335 (2001)。
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Y. Takahashi and H. Kawaguchi: "Polarization dependent nonlinear optical gains in semiconductor quantum-well lasers"Extended Abstracts (The 60th Autumn Meeting, 1999); The Japan Society of Applied Physics. 3p-ZB-17. 1016
Y. Takahashi 和 H. Kawaguchi:“半导体量子阱激光器中的偏振相关非线性光学增益”扩展摘要(第 60 届秋季会议,1999 年);
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H.Kawaguchi, Y.Yamayoshi, K.Tamura: "All-optical demultiplexing using an ultrafast polarization bistable vertical-cavity surface-emitting laser"ECOC'99. II. 268-269 (1999)
H.Kawaguchi、Y.Yamayoshi、K.Tamura:“使用超快偏振双稳态垂直腔表面发射激光器的全光解复用”ECOC99。
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- 影响因子:0
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田村和丈,山吉康弘,河口仁司: "超高速偏光双安定面発光半導体レーザを用いた全光型信号処理"信学技報. LQE2000-42. 25-30 (2000)
Kazutake Tamura、Yasuhiro Yamayoshi、Hitoshi Kawaguchi:“使用超快偏振双稳态表面发射半导体激光器的全光信号处理”IEICE 技术报告 LQE2000-42 (2000)。
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- 影响因子:0
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H.Kawaguchi,Y.Yamayoshi,and K.Tamura: "All-Optical RZ to NRZ Format Conversion Using an Ultrafast Polarization Bistable Vertical-Cavity Surface-Emitting Laser"IEEE Lasers and Electro-Optics Society 2000 Annual Meeting LEOS 2000. Vol.2. 575-676 (2000)
H.Kawaguchi、Y.Yamayoshi 和 K.Tamura:“使用超快偏振双稳态垂直腔表面发射激光器进行全光 RZ 到 NRZ 格式转换”IEEE 激光和电光协会 2000 年年会 LEOS 2000。
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KAWAGUCHI Hitoshi其他文献
KAWAGUCHI Hitoshi的其他文献
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{{ truncateString('KAWAGUCHI Hitoshi', 18)}}的其他基金
Highly functional semiconductor nanophotonic devices and their applications for photonic RAM
高功能半导体纳米光子器件及其在光子RAM中的应用
- 批准号:
24226011 - 财政年份:2012
- 资助金额:
$ 9.47万 - 项目类别:
Grant-in-Aid for Scientific Research (S)
Creation of spin-photonic devices
自旋光子器件的创建
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23656240 - 财政年份:2011
- 资助金额:
$ 9.47万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Multi-bit polarization bistable optical memory operating in the optical fiber transmission wavelength range
工作在光纤传输波长范围内的多位偏振双稳态光存储器
- 批准号:
21360034 - 财政年份:2009
- 资助金额:
$ 9.47万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
All-optical signal processing using polarization bistable VCSELs
使用偏振双稳态 VCSEL 进行全光信号处理
- 批准号:
17068003 - 财政年份:2005
- 资助金额:
$ 9.47万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
Study of ultrafast optical buffer memory using long wavelength VCSELs
使用长波长 VCSEL 的超快光学缓冲存储器的研究
- 批准号:
16360025 - 财政年份:2004
- 资助金额:
$ 9.47万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study of ultrafast optical signal processing using polarization bistable VCSELs
使用偏振双稳态 VCSEL 进行超快光信号处理的研究
- 批准号:
14350027 - 财政年份:2002
- 资助金额:
$ 9.47万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study of four-wave mixing in semiconductor optical amplifiers
半导体光放大器四波混频研究
- 批准号:
11694125 - 财政年份:1999
- 资助金额:
$ 9.47万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study of ultrafast all-optical flip-flop operation with vertical-cavity surface-emitting lasers
垂直腔面发射激光器超快全光触发器操作研究
- 批准号:
08455029 - 财政年份:1996
- 资助金额:
$ 9.47万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study on ultra-fast nonlinear optical functional devices
超快非线性光学功能器件研究
- 批准号:
07555010 - 财政年份:1995
- 资助金额:
$ 9.47万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Study on ultra-fast optical memories using semiconductor lasers
利用半导体激光器的超快光存储器研究
- 批准号:
06452125 - 财政年份:1994
- 资助金额:
$ 9.47万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
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