Study of ultrafast optical signal processing using polarization bistable VCSELs
Study of ultrafast optical signal processing using polarization bistable VCSELs
批准号:
14350027
负责人:
KAWAGUCHI Hitoshi
金额:
$10.82万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2003
中文摘要
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英文摘要
We investigated mainly the following three topics to create new nonlinear optical functional devices based on the pitchfork bifurcation bistable operation of vertical-cavity surface-emitting lasers (VCSELs) and injection of spin-polarized electrons.(1)We studied the bistable switching between the two orthogonal polarization modes existing in the VCSEL with a squared shape waveguide. As one important all-optical signal processing, we have shown by our simulations that the 3R function (Retiming, Reshaping, and Regenerating) can be obtained using such a VCSEL. This 3R regeneration has a large optical gain of 16 dB for 10 Gbit/s and the optical gain was reduced with an increase in bit rate. The ON-OFF ratio is improved by the 3R regeneration up 100 Gbit/s.(2)We have proposed the optical buffer memory using a two-dimensional array of the ultrafast polarization bistable VCSELs. Optical buffer memory is an important device for photonic packet switching. First, the polarization of the VCSELs are reset by an optical reset pulse. Ultrafast optical signals are converted to spatially parallel signals and injected into the VCSELs together with optical set pulses. Only when the optical signals and the optical set pulses are simultaneously injected into the VCSELs, the VCSELs change their polarization. Therefore, the VCSELs emit the outputs with the polarizations which depend on '0' and '1' of the input signal. The output signal pulses are created from the CW 0°output of the VCSELs and are converted to an ultrafast optical signal.(3)We investigated the electric field dependence of electron spin relaxation during transport in GaAs at 10K. Spin polarizations of photogenerated electrons were measured before and after drifting in the 2μm region of GaAs under photoluminescence from quantum wells. We have found direct evidence that the electron spin relaxation during the drift is accelerated in the higher electric field.
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H.Kawaguchi, Y.Yamayoshi: "All-optical 3R regeneration using an ultrafast polarization bistable VCSEL"CLEO 2002. CThO38. 531-532 (2002)
H.Kawaguchi、Y.Yamayoshi:“使用超快偏振双稳态 VCSEL 进行全光学 3R 再生”CLEO 2002。CThO38。
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河口仁司: "偏光双安定面発光半導体レーザーによる超高速光信号処理と光バッファーへの応用"O plus E. Vol.25, No.7. 782-787 (2003)
Hitoshi Kawaguchi:“使用偏振双稳态表面发射半导体激光器进行超高速光信号处理及其在光缓冲器中的应用”O plus E. Vol.25,No.7 (2003)。
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Y.Sato, Y.Takahashi, Y.Kawamura, H.Kawaguchi: "Electron spin relaxation during transport in GaAs"the 2003 International Conference on Solid State Devices an Materials (SSDM 2003). E-3-6L. 306-307 (2003)
Y.Sato、Y.Takahashi、Y.Kawamura、H.Kawaguchi:“GaAs 传输过程中的电子自旋弛豫”2003 年国际固态器件和材料会议 (SSDM 2003)。
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Y.Sato, M.Yamaguchi, Y.Takahashi, Y.Kawamura, H.Kawaguchi: "Spin relaxation measurement of the spin-polarized electrons during transport in GaAs using double-quantum well heterostructure"to be published in EQEC 2003. (未定). (2003)
Y.Sato、M.Yamaguchi、Y.Takahashi、Y.Kawamura、H.Kawaguchi:“使用双量子阱异质结构在 GaAs 传输过程中自旋弛豫测量自旋极化电子”,发表于 EQEC 2003。(To待定))(2003)。
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Y.Sato, Y.Takahashi, Y.Kawamura, H.Kawaguchi: "Field dependence of electron spin relaxation during transport in GaAs"Extended Abstracts (The 51st Spring Meeting, 2004) ; The Japan Society of Applied Physics and Related Societies. 30p-ZK-2. 1657 (2004)
Y.Sato、Y.Takahashi、Y.Kawamura、H.Kawaguchi:“GaAs 传输过程中电子自旋弛豫的场依赖性”扩展摘要(第 51 届春季会议,2004 年);
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共 35 条
Highly functional semiconductor nanophotonic devices and their applications for photonic RAM
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批准号:24226011
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项目类别:Grant-in-Aid for Scientific Research (S)
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资助金额:$82.45万
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财政年份:2012
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Creation of spin-photonic devices
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批准号:23656240
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.5万
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财政年份:2011
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Multi-bit polarization bistable optical memory operating in the optical fiber transmission wavelength range
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批准号:21360034
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.81万
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财政年份:2009
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负责人:KAWAGUCHI Hitoshi
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依托单位:
All-optical signal processing using polarization bistable VCSELs
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批准号:17068003
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$41.92万
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财政年份:2005
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Study of ultrafast optical buffer memory using long wavelength VCSELs
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批准号:16360025
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.73万
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财政年份:2004
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Study of injection of spin - polarized electrons into semiconductors through ferromagnetic metal
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批准号:11450023
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.47万
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财政年份:1999
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Study of four-wave mixing in semiconductor optical amplifiers
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批准号:11694125
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.04万
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财政年份:1999
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Study of ultrafast all-optical flip-flop operation with vertical-cavity surface-emitting lasers
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批准号:08455029
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.8万
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财政年份:1996
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Study on ultra-fast nonlinear optical functional devices
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批准号:07555010
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$6.21万
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财政年份:1995
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Study on ultra-fast optical memories using semiconductor lasers
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批准号:06452125
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.35万
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财政年份:1994
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Development of shot Optical pulse generators using semiconductor lasers
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批准号:04555010
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$12.22万
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财政年份:1992
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负责人:KAWAGUCHI Hitoshi
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依托单位:
Research on ultra-fast optical bistable devices with multi-dimentional quantum well structure
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批准号:01460081
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.26万
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财政年份:1989
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负责人:KAWAGUCHI Hitoshi
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依托单位:
海外基金