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TRANSPORT PHENOMENA OF SPIN-POLARIZED ELECTRON IN DOUBLE-TUNNELING BARRIER

TRANSPORT PHENOMENA OF SPIN-POLARIZED ELECTRON IN DOUBLE-TUNNELING BARRIER
双隧道势垒中自旋极化电子的输运现象
批准号:
11450120
负责人:
TSUNASHIMA Shigeru
金额:
$9.92万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B).
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000

项目摘要

项目成果

TSUNASHIMA Shigeru的其他基金

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中文摘要
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英文摘要
Exchange anisotropy has been investigated by torque magnetometory for MnPt (30 nm)/NiFe (5 nm) bilayers grown by the MBE method on MgO(001), SrTiO_3(001), and MgO(111) substrates. In-situ reflection high-energy electron diffraction observation and ex-situ X-ray diffraction measurements revealed that the MnPt layers have chemical order and have (100) uncompensated and (111) compensated plane parallel to the film plane, respectively for (001) and (111) substrate orientation. In PtMn/NiFe/SrTiO_3(001) unidirectional and uniaxial anisotropies have been observed, while in NiFe/PtMn/MgO(001) both the anisotropies almost disappeared and an anisotropy with four fold symmetry was observed. This anisotropy is thought to be closely related with the crystal anisotropy of PtMn.We have prepared NiFe/NiO bilayers and the NiFe/NiO/CoPt with various NiO thicknesses by RF magnetron sputtering under a dc magnetic field of 70 Oe, and investigated the magnetization process of these samples. In the NiFe/NiO bilayers, the exchange coupling field H_<ex> increased with increasing NiO thickness for t_<NiO>>10 nm, and becomes almost constant value of 110 Oe for t_<NiO>>20 nm. In the NiFe/NiO/CoPt trilayer, it is found that the magnetic moment of NiFe tend to align in the same direction as that of hard magnetic CoPt from the minor loop of the trilayer with NiO thickness of 10 nm. The loop shift depending on the direction of the CoPt moment did not appeared in the trilayer with the NiO thickness of 30 nm. The direction of the loop shift of NiFe layer was found to be controlled by changing of the direction of the applied field during the deposition.
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N.Hashida: "Simulation of thermomagnetic recording using extended Huth's equation"J.Magn.Soc.Jpn.. vol.25. 303-306 (2001)
N.Hashida:“使用扩展 Huth 方程模拟热磁记录”J.Magn.Soc.Jpn.. vol.25。
DOI: --
发表时间:
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作者: []
通讯作者:
K.Sugihara: "Structure and magnetic properties of epitaxial CrPt_3 and Cr_<0.8>Mn_<0.2>Pt_3 alloy films"J.Magn.Soc.Jpn.. vol.25. 234-237 (2001)
K.Sugihara:“外延CrPt_3和Cr_<0.8>Mn_<0.2>Pt_3合金薄膜的结构和磁性能”J.Magn.Soc.Jpn..vol.25。
DOI: --
发表时间:
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作者: []
通讯作者:
K.Shimoyama, T.Kato, S.Iwata, S.Tsunashima: "Exchange anisotropy in MBE grown MnPt/NiFe bilayers"J.Magn.Soc.Jpn.. Vol.23, No.4-2. 1245-1248 (1999)
K.Shimoyama、T.Kato、S.Iwata、S.Tsunashima:“MBE 生长的 MnPt/NiFe 双层中的交换各向异性”J.Magn.Soc.Jpn.. Vol.23,No.4-2。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
K.Sugihara: "Structure and magnetic properties of epitaxial CrPt_3 and Cr_<0.8>Mn_<0.2>Pt_3 alloy films"J.Magn.Soc.Jpn.. vol.25. (2001)
K.Sugihara:“外延CrPt_3和Cr_<0.8>Mn_<0.2>Pt_3合金薄膜的结构和磁性能”J.Magn.Soc.Jpn..vol.25。
DOI: --
发表时间:
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影响因子: --
作者: []
通讯作者:
35
    Study of spin-transfer torque MRAM using thermal assistnce
    Spin injection magnetic memory using perpendicular magnetized films
    • 批准号:
      19360143
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $11.65万
    • 财政年份:
      2007
    • 负责人:
      TSUNASHIMA Shigeru
    • 依托单位:
    Study on spin injection solid state magnetic memories
    • 批准号:
      16206031
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $31.7万
    • 财政年份:
      2004
    • 负责人:
      TSUNASHIMA Shigeru
    • 依托单位:
    Microfabricated synthetic ferrimagnetic elements and their application to high density memory devices
    • 批准号:
      13450126
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $9.79万
    • 财政年份:
      2001
    • 负责人:
      TSUNASHIMA Shigeru
    • 依托单位: