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Study on spin injection solid state magnetic memories

自旋注入固态磁存储器的研究

基本信息

批准号：
16206031
负责人：
TSUNASHIMA Shigeru
金额：
$ 31.7万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16206031/
关键词：
microfabrication electron beam lithography thermomagnetic recording spin injection amorphous alloy etching method Joule heating critical current リフトオフ法

项目摘要

In order to develop high speed, non-volatile, and thermally stable solid-state memory, this research studied thermal writing and spin injection writing on micro-fabricated amorphous magnetic thin films.TbFe amorphous thin films having a large perpendicular magnetic anisotropy and moderate Curie temperature were micro-fabricated by using electron beam lithography technique. In this study, thermomagnetic writing was performed by flowing current pulses into the micro-fabricated TbFe narrow path under a static magnetic field of 100 Oe. The successful writing on TbFe with a lateral size of 0.5 x 0.5 μm^2 was confirmed after the application of the current pulse of 0.14 mW and 100 nsec. The critical current density for the successful writing was increased with decreasing pulse duration, and the dependence on the pulse duration was reproduced by the numerical thermal simulation.It is necessary to exhibit high tunnel magneto-resistance (TMR) ratio in TbFe based magnetic tunnel junctions to utilize the TbFe memory layer as an element of the magnetic random access memory. We, therefore, tried to fabricate magnetic tunneling junctions having the structure of TbFe (20 nm) / CoFe (tnm) / Al-0 (1.6 nm) / CoFe (t nm) / TbFe (20 nm). By inserting thin CoFe layers at t = 1 nm, large TMR ratio of 12% was confirmed. Further improvement of the TMR ratio is expected by optimizing the deposition condition and the structure of the junction.

为了开发高速、非易失性、热稳定的固态存储器，本研究利用电子束光刻技术在微加工非晶磁性薄膜上进行了热写入和自旋注入写入的研究，制备了具有较大垂直磁各向异性和中等居里温度的TbFe非晶薄膜。在这项研究中，通过在100 Oe的静磁场下将电流脉冲流入微加工的TbFe窄路径来进行热磁写入。在施加0.14 mW和100 nsec的电流脉冲后，确认了横向尺寸为0.5 x 0.5 μm^2的TbFe上的成功写入。TbFe基磁性隧道结的临界写入电流密度随脉冲宽度的减小而增大，数值热模拟再现了TbFe基磁性隧道结的隧穿磁电阻（TMR）比随脉冲宽度的变化规律.因此，我们尝试制备具有TbFe（20 nm）/ CoFe（tnm）/ Al-0（1.6 nm）/ CoFe（tnm）/ TbFe（20 nm）结构的磁性隧道结。通过在t = 1 nm处插入薄CoFe层，确认了12%的大TMR比。期望通过优化沉积条件和结的结构来进一步提高TMR比。

项目成果

期刊论文数量（19）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Thickness Dependence of Exchange Anisotropy for (001) Oriented Mn_<89>Pt_<11>/NiFe Bilayers

(001) 取向 Mn_<89>Pt_<11>/NiFe 双层交换各向异性的厚度依赖性

DOI：
发表时间：
2007
期刊：
J. Magn. Magn. Mat. 310・2-3
影响因子：
0
作者：
D.Hippo;K.Urakawa;Y.Kawata;Y.Tsuchiya;H.Mizuta;N Koshida;S.Oda;K. Yamane;H.Yamaguchi;T.Kume et al.
通讯作者：
T.Kume et al.

Exchange anisotropy of MBE grown Mn1−xPtx/NiFe bilayers with (0 0 1) orientation

MBE 生长的 Mn1−xPtx/NiFe 双层（0 0 1）取向的交换各向异性

DOI：
10.1016/j.jmmm.2003.12.385
发表时间：
2004
期刊：
Journal of Magnetism and Magnetic Materials
影响因子：
2.7
作者：
T. Kume;Y. Sugiyama;T. Kato;S. Iwata;S. Tsunashima
通讯作者：
S. Tsunashima

Simulation of thermomagnetic recording process using MFM method : effect of field gradient (Invited)

使用MFM方法模拟热磁记录过程：场梯度的影响（特邀）

DOI：
发表时间：
2004
期刊：
Trans. Magn. Soc. Jpn 4-2
影响因子：
0
作者：
K. Kajikawa;K. Tomachi;N. Maema;M. Matsuo;S. Sato;K. Funaki;H. Kumakura;K. Tanaka;M. Okada;K. Nakamichi;Y. Kihara;T. Kamiya;I. Aoki;T.Kato et al.
通讯作者：
T.Kato et al.

固体メモリ装置

固态存储设备