Microfabricated synthetic ferrimagnetic elements and their application to high density memory devices
Microfabricated synthetic ferrimagnetic elements and their application to high density memory devices
批准号:
13450126
负责人:
TSUNASHIMA Shigeru
金额:
$9.79万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2002
中文摘要
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英文摘要
Synthetic ferrimagnetic films and exchange biased bilayers were microfabricated by focused ion beam, and their magnetic domain structures were imaged by magnetic force microscopy. In addition, imaging technique using magnetic X-ray microscope was investigated.(1) NiFe/Ru/NiFe synthetic ferrimagnetic films were prepared by magnetron sputtering and their magnetic properties were measured. Sufficient antiferromagnetic coupling was confirmed to obtained by optimizing the sputtering condition.(2) Square, rectangular, and ellipsoid magnetic elements were fabricated by focused Ga^+ ion beam having 〜100 nm diameter. Closure domain structure was observed for the squared NiFe(12 nm)/Ru(0.3 nm)/NiFe(10 nm) elements, and single domain structure was obtained in the 1:3 rectangular and ellipsoid elements. The dependence of the domain structure on the film construction was also investigated.(3) Domain structure recorded by a magnetic field modulation method on the magneto-optical recording media was imaged by using transmission X-ray microscope. The small marks less than 100 nm lengths were found to be clearly imaged by using X-ray microscope. The dependence of the minimum mark length on the film composition was also investigated. The experimental results were found to be explained by the simulation based on Huth's model.
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T.Kato: "Magnetic domain structure of NiFe and MnIrINiFe elements patterned by focused ion beam"Jpn.J.Appl.Phys.. 41-10A. L1078-L1080 (2002)
T.Kato:“通过聚焦离子束图案化的 NiFe 和 MnIrINiFe 元素的磁畴结构”Jpn.J.Appl.Phys.. 41-10A。
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T.Koyama et al.: "Simulation of thermomagnetic recording process using magnetic field modulation method"Trans.Magn.Soc.Jpn.. Vol.2 No.4. 271-272 (2002)
T.Koyama等人:“使用磁场调制方法的热磁记录过程的模拟”Trans.Magn.Soc.Jpn..Vol.2 No.4。
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T.Kume et al.: "Exchange anisotropy in epitaxial Mn_<1-x>Pt_<x/>NiFe bilayers"IEEE Trans.Magn.. Vol.38 No.5. 2785-2787 (2002)
T.Kume 等人:“外延 Mn_<1-x>Pt_<x/>NiFe 双层中的交换各向异性”IEEE Trans.Magn.. Vol.38 No.5。
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T.Kato: "Magnetic Circular Dichroism of Polycrystalline (Mn_<1-x>Cr_x)Pt_3 and Epitaxial CrPt_3 Alloy Films"Trans. Magn. Soc. Jpn.. 2-2. 98-103 (2002)
T.Kato:“多晶(Mn_<1-x>Cr_x)Pt_3和外延CrPt_3合金薄膜的磁圆二色性”Trans。
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T.Kato: "Magnetic properties of polycrystalline and epitaxial Cr_1-x>Mn_xPt_3 alloy films"IEEE Trans.Magn.. 37-4. 2414-2416 (2001)
T.Kato:“多晶和外延Cr_1-x>Mn_xPt_3合金薄膜的磁性”IEEE Trans.Magn. 37-4。
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共 23 条
Study of spin-transfer torque MRAM using thermal assistnce
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批准号:22560315
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.41万
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财政年份:2010
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负责人:TSUNASHIMA Shigeru
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Spin injection magnetic memory using perpendicular magnetized films
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财政年份:2007
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负责人:TSUNASHIMA Shigeru
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Study on spin injection solid state magnetic memories
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批准号:16206031
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$31.7万
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财政年份:2004
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负责人:TSUNASHIMA Shigeru
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Fabrication of Curie point written solid state magnetic memories
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批准号:13555092
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.7万
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财政年份:2001
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负责人:TSUNASHIMA Shigeru
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依托单位:
TRANSPORT PHENOMENA OF SPIN-POLARIZED ELECTRON IN DOUBLE-TUNNELING BARRIER
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批准号:11450120
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$9.92万
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财政年份:1999
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负责人:TSUNASHIMA Shigeru
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CONTROL OF SPIN CONFIGURATION OF MAGNETIC ULTRA-THIN FILMS
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批准号:08405024
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$25.79万
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财政年份:1996
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负责人:TSUNASHIMA Shigeru
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依托单位:
ULTRA-HIGH DENSITY MAGNETO-OPTICAL RECORDING SYSTEM
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批准号:08555074
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$8.7万
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财政年份:1996
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负责人:TSUNASHIMA Shigeru
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依托单位:
Magneto-Optical Properties of Co/Noblemetal Artificial Superlattices
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批准号:01550011
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.54万
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财政年份:1989
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负责人:TSUNASHIMA Shigeru
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依托单位:
Magnetic properties of compositionally modulated alloy films
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批准号:61550227
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.28万
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财政年份:1986
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负责人:TSUNASHIMA Shigeru
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依托单位:
国内基金
海外基金
微制作技术构建组织工程神经支架的研究
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批准号:81071260
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项目类别:面上项目
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资助金额:35.0万元
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批准年份:2010
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负责人:冯喜增
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依托单位: