Study of spin-transfer torque MRAM using thermal assistnce

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Heat-assistance of the MRAM cell during the writing is considered to be effective to reduce the critical current density for the spin transfer torque (STT) switching. We fabricated giant magneto-resistance films with GdFeCo memory layers and investigated their STT switching aiming for the application to the thermally assisted MRAM. We also fabricated perpendicularly magnetized tunnel junctions with TbFe layer which has a large perpendicular anisotropy and low curie temperature. In both experiments we found that heat assistance is effective to reduce the current density for the STT switching.