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High Performance Optoelectronic Integrated Devices by Micromachining Technique

High Performance Optoelectronic Integrated Devices by Micromachining Technique
微加工技术高性能光电集成器件
批准号:
07555111
负责人:
NODA Susumu
金额:
$5.44万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1997

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中文摘要
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英文摘要
Optoelectronic integrated devices in which light-receiving and light-emitting devices are vertically and directly integrated, produce various new optical functions important for optical signal processing and optical interconnections. By integrating vertically and directly conventional optoelectronic deices, not only the combined characteristics of the constituent devices, but also new functions due to the mutual interaction between them can be easily obtained. This leads to more general engineering concept that the higher the degree of integration, the higher the functionality of the device. Based on this concept, we have at first developed advanced optical logic devices with various flip-flop functions such as bistable and tristable flip-flops and an astable multivibrator by integrating multiple laser diodes and heterojunction phototransistors and utilizing internal optical and electrical couplings.In the application of the integrated devices to parallel signal processings, it is very … More important to possess a surface-emitting function. Recently, a vertical cavity surface-emitting laser (VCSEL) has been drawing much attention. When we use the VCSEL as the laser part of the integrated devices, however, the optical feedback from the VCSEL to the heterojunction phototransistors becomes too strong since the lasing output power directly enters the phototransistors. The integrated devices utilizes the spontaneous emission instead of the lasing emission as the optical feedback to obtain various functions. The strong optical feedback leads to the limited numbers of functions such as an optical awitching. To avoid this limitation, we have considered using a circular grating coupled surface-emitting device. The lasing oscillation occurs in the direction parallel to the substrate surface, and a part of the light is coupled out to the direction normal to the substrate surgace. Therefore, when we integrate the phototransistors on the position where there is no grating coupler, the feedback light becomes spontaneous light and various functions can be expected. In this work, we have for the first time achieved the lasing oscillation of the circular grating coupled surface-emitting laser with the embedded grating couplers which is suitable for integration. From the near-field pattern observation of the device, however, it was found that the lasing was observed mainly along the [110] direction and the pattern tended to spread into a wider area with increasing injection current. This behavior is due to a slight nonuniformity of the grating shapes in the azimuthal direction.To overcome the above problem, we have employed a new method to embed the gratings, that is, wafer-fusion technique. The basic idea for the process is as follows : two epitaxial wafers A and B were prepared (the wafer A has a separate confinement multiple quantum well structure, and the wafer B has second-order diffraction gratings), the surface of each wafer was pretreated by buffered HF solution, and the wafers were stacked under the pressure higher than 1.7N/cm^2 and heated in H_2 atmosphere for 30min at 620゚C.Then the wafers A and B were bonded as strong as to withstand various processes, and it was found from the SEM and TEM observation that the uniform air/semiconductor gratings were formed in the device having the depth and period about 0.2mum and 0.4mum, respectively. The rectangular-like grating shape obtained by the reactive ion etching was changed to somewhat circular shape due toe the mass-transport phenomenon. The fused interface bacame firmer and electronically more reliable with the aid of the mass-transport. It has been also found that the shape of the grating after wafer-fusion has almost no dependence on the crystalline orientation. Then the fused wafers were processed to a ridge waveguide structure, and the CW lasing oscillation has been successfully achieved at room temperature. These results are very encouraging to develop integrated devices with uniformly embedded circular grating coupled surface-emitting elements. Less
期刊论文(36)
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会议论文
S.Noda, et al.: "Surface-Emitting Device with Embedded Circular Grating Coupler for Possible Application to Optoelectronic Integrated Devices" IEEE Photon.Tech.Lett.7. 1397-1399 (1995)
S.Noda 等人:“具有嵌入式圆形光栅耦合器的表面发射器件,可能应用于光电集成器件”IEEE Photon.Tech.Lett.7。
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通讯作者:
S.Noda, N.Yamamoto, and A.Sasaki: "New Realization Method for Three-Dimensional Photonic Crystal in Optical Wavelength Region" Jpn.J.Appl.Phys. 35. L909-L912 (1996)
S.Noda、N.Yamamoto 和 A.Sasaki:“光波长区域三维光子晶体的新实现方法”Jpn.J.Appl.Phys。
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通讯作者:
M.Imada and S.Noda: "Structural and Electrical Characterization of IuP Air/Semiconducton Gratings Formed by Mass-Transport Assisted Wafer Fusion Technigue" Etended Abstract of the 1997 Iuterna tional Canference on Solod State Devices and Materials. 170-17
M.Imada 和 S.Noda:“通过质量传输辅助晶圆融合技术形成的 IuP 空气/半导体光栅的结构和电气特性”1997 年国际固体器件和材料会议的摘要。
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通讯作者:
野田(分担): "オプトエレクトロニクス用語辞典" オーム社, 330 (1996)
野田(合伙人):《光电术语词典》Ohmsha,330(1996)
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