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Fabrication of three-dimensional photonic crystals by autocloning

通过自动克隆制备三维光子晶体

基本信息

批准号：
11450132
负责人：
HANAIZUMI Osamu
金额：
$ 9.98万
依托单位：
Gunma University (2000-2001)Tohoku University (1999)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

项目摘要

We developed a technology to combine materials having luminescence with photonic crystals fabricated by autocloning utilizing radio frequency (rf) bias sputtering.(1) SiO_2/air three-dimensional (3D) periodic structures were fabricated by removing Si layers partially from Si/SiO_2 3D photonic crystals (PhCs) formed by using autocloning. CdS/SiO_2 3D periodic structures were formed by introducing CdS into the SiO_2/air structures by the TEA method and photoluminescence (PL) was observed from the introduced CdS. TiO_2/air/CdS two-dimensional (2D) PhCs were also fabricated by introducing CdS into the voids of TiO_2/air 2D periodic structures, in which SiO_2 layers were partially etched out from TiO_2/SiO_2 2D PhCs fabricated by using autocloning. PL radiating normal to the surface was measured and large polarization dependence was observed.(2) We developed and demonstrated technologies for selectively growing III-V compound semiconductor active layers by molecular beam epitaxy in a region surrounded by Si/SiO_2 3D photonic crystals fabricated by using the autocloning method. Polarization dependence was observed in photoluminescence transmitted in a lateral direction in the photonic crystal. We thought Si:SiO_2 films fabricated by rf sputtering are suitable for autocloning and tried to combine Si:SiO_2 films with photonic crystals fabricated by autocloning.(3) We found that Si:SiO_2 films sputtered under a limited condition emit white light without annealing. Si:SiO_2 films were deposited by sputtering Si tablets (20 mm diameter) placed on a SiO_2 target (65 mm diameter). Samples deposited using one or two tablets exhibited a surprisingly wide continuous photoluminescence spectra (from wavelengths of below 0.4 μm to over 0.83 μm), and white light emission could be seen by the naked eye at room temperature. Samples deposited by using three or four tablets did not emit, and we found there was a limited Si mixture ratio at which samples emit without annealing.

我们开发了一种将具有发光的联合收割机材料与利用射频（rf）偏压溅射通过自克隆制造的光子晶体相结合的技术。(1)利用自克隆技术制备了Si/SiO2三维光子晶体，通过去除部分Si层，制备了SiO2/空气三维周期结构。通过TEA法在SiO_2/air结构中引入CdS，形成CdS/SiO_2三维周期结构，并观察到CdS的光致发光（PL）。利用自克隆技术制备了TiO_2/SiO_2二维光子晶体，并在TiO_2/air二维光子晶体中刻蚀出部分SiO_2层，通过在TiO_2/air二维光子晶体中引入CdS，制备了TiO_2/air/CdS二维光子晶体。PL辐射垂直于表面进行了测量，并观察到大的偏振依赖性。(2)我们开发并演示了在利用自克隆方法制备的Si/SiO_2三维光子晶体周围区域中通过分子束外延选择性生长III-V族化合物半导体有源层的技术。在光子晶体中横向传输的光致发光中观察到偏振依赖性。我们认为射频溅射法制备的Si：SiO_2薄膜适合于自克隆，并尝试将Si：SiO_2薄膜与自克隆法制备的光子晶体联合收割机相结合。(3)我们发现在一定条件下溅射的Si：SiO_2薄膜不经退火就能发出白色光。在直径为65 mm的SiO_2靶上溅射Si片（直径为20 mm）制备了Si：SiO_2薄膜。使用一个或两个片剂沉积的样品显示出令人惊讶的宽的连续光致发光光谱（从低于0.4 μm到超过0.83 μm的波长），并且在室温下可以通过肉眼看到白色光发射。通过使用三个或四个片剂沉积的样品不发射，我们发现有一个有限的Si混合物的比例，在该比例下，样品发射没有退火。