Study on fabrication technology of high-density silicon nanocrystals and its application to photonics elements

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We observed ultraviolet (UV)-light emission from Si-ion-implanted fused-silica substrates under an implanting condition different from our previous work. A single UV-light photoluminescence (PL) peak has been achieved. The implantation energy was 80 keV, with the implantation dose 2 x 10^<17> ions/cm^2. The Si-ion-implanted samples were annealed in ambient air at 1100, 1150, 1200, and 1250℃ for 25 min. UV-PL spectra having peaks around a wavelength of 370 nm were observed from all samples at room temperature under excitation using a He-Cd laser (・=325 nm). The maximum intensity was observed after annealing at 1250℃, and the longer wavelength PL peak around 800 nm observed from the samples annealed at 1100 and 1150℃ disappeared by annealing above 1200℃. We have successfully obtained only the UV-light emission peaks by selecting the proper annealing temperatures. UV-light emitting materials are expected to be useful as light sources for next-generation optical-disk systems whose data densities are higher than Blu-ray Disc systems.