Investigation of mechanism of bias sputtering causing autocloning

偏压溅射引起自动克隆的机制研究

基本信息

  • 批准号:
    14205054
  • 负责人:
  • 金额:
    $ 24.21万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
  • 财政年份:
    2002
  • 资助国家:
    日本
  • 起止时间:
    2002 至 2004
  • 项目状态:
    已结题

项目摘要

CdS two-dimensional photonic crystals were fabricated by using double-interference exposure and rf sputtering. A suppressed photoluminescence spectrum was observed normal to the surface in the wavelength range other than in-plane resonance.We developed a dry-etching process to form holes with diameters of 5 microns to 50 of microns in 7-micron thick a-Si/SiO_2 three-dimensional photonic crystal layers fabricated on InP substrates by the autocloning method. We also demonstrated wet-etching processes to remove damaged surfaces of exposed InP substrates and selectively grew In_<0.62>Ga_<0.38>As/In_<0.45>Ga_<0.31>Al_<0.24>As multiple quantum well by molecular beam epitaxy in a region surrounded by a-Si/SiO_2 three-dimensional photonic crystals. Polarization dependence was observed in a spontaneous emission transmitted at 75 microns in a lateral direction in the photonic crystal layer.We observed a photoluminescence(PL) spectrum at room temperature that had a peak with full width of half maximum(FWHM) of 0.38 eV near the bandgap energy of 3.2 eV from an Si:SiO_2 sputtered film without annealing. Blue-light emission could be seen by the naked eye. A low-intensity PL peak with FWHM of 0.20 eV was also observed at around 1.6 eV. We have already demonstrated that our method automatically forms Si clusters contributing to visible emission. Our results did not contradict the well-founded conjecture that there were two mechanisms of emission from Si clusters : emission at 1.6 to 1.7 eV due to the surface state of the oxidized Si nanocrystals and emission at the bandgap energy originating from the quantum confinement effect. Blue-light-emission from Ti:SiO_2 sputtered films was also observed at room temperature without annealing. The peaks of PL spectra were located at 3.03 to 3.05 eV and FWHM were 0.38 to 0.40 eV, which were almost the same in samples having different energies of absorption edge.
采用双干涉曝光和射频溅射的方法制备了硫化镉二维光子晶体。利用干法刻蚀技术,在InP衬底上制备了7微米厚的a-Si/SiO_2三维光子晶体薄膜,形成了直径从5微米到50微米的孔洞。我们还展示了去除暴露的InP衬底表面的湿法刻蚀工艺,并在a-Si/SiO_2三维光子晶体包围的区域内通过分子束外延选择性地生长了In_&lt;0.62&gt;Ga_&lt;0.38&gt;As/In_&lt;0.45&gt;Ga_&lt;0.31&gt;Al_&lt;0.24&gt;As多量子阱。观察到了75微米波长的光子晶体层横向自发辐射与偏振的关系。我们在室温下观察到一个半高宽为0.38 eV的光致发光峰,该峰位于未经热处理的Si:SiO_2溅射薄膜的禁带能量3.2 eV附近。肉眼可以看到蓝光的发射。在1.6 eV附近还观察到半高宽为0.20 eV的低强度发光峰。我们已经证明,我们的方法可以自动形成对可见光发射有贡献的硅团簇。我们的结果与有根据的猜测并不矛盾,即硅团簇有两种发射机制:由氧化后的硅纳米晶表面状态引起的1.6~1.7 eV处的发射和由量子限制效应产生的带隙能量处的发射。在室温下,未经热处理的Ti:SiO_2溅射薄膜也观察到蓝光发射。荧光光谱的峰值位于3.03~3.05 eV,半峰宽在0.38~0.40 eV,这在不同吸收边能量的样品中基本相同。

项目成果

期刊论文数量(34)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Optical gain in as-grown sputtered SiO_2 film containing Si-Ge nanocrystals
含有 Si-Ge 纳米晶的溅射 SiO_2 薄膜的光学增益
青色発光Si : SiO_2膜とそれを具備した青色発光素子ならびに青色発光Si : SiO_2膜の製造方法
蓝色发光Si:SiO_2薄膜、具备该蓝色发光器件的蓝色发光Si:SiO_2薄膜、以及蓝色发光Si:SiO_2薄膜的制造方法
  • DOI:
  • 发表时间:
    2002
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Photonics Based on Wavelength Integration and Manipulation
基于波长积分和操纵的光子学
  • DOI:
  • 发表时间:
    2004
  • 期刊:
  • 影响因子:
    0
  • 作者:
    S.Tanabe;N.Sugimoto;S.Tanabe;田部 勢津久;田部 勢津久;S.Tanabe;田部 勢津久;S.Tanabe;田部 勢津久;S.Tanabe;S.Tanabe;田部 勢津久;Setsuhisa Tanabe;S.Tanabe
  • 通讯作者:
    S.Tanabe
Fabrication of CdS two-dimensional photonic crystals using rf sputtering and assessment of their emission properties
使用射频溅射制造 CdS 二维光子晶体并评估其发射特性
Blue-light emission from sputtered Ti:SiO2 films without annealing
  • DOI:
    10.1063/1.1745113
  • 发表时间:
    2003-01
  • 期刊:
  • 影响因子:
    4
  • 作者:
    O. Hanaizumi;K. Ono;Y. Ogawa;Toshiaki Matsumoto;H. Yoda;K. Shiraishi
  • 通讯作者:
    O. Hanaizumi;K. Ono;Y. Ogawa;Toshiaki Matsumoto;H. Yoda;K. Shiraishi
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HANAIZUMI Osamu其他文献

HANAIZUMI Osamu的其他文献

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{{ truncateString('HANAIZUMI Osamu', 18)}}的其他基金

Study on fabrication technology of high-density silicon nanocrystals and its application to photonics elements
高密度硅纳米晶制备技术及其在光子元件中的应用研究
  • 批准号:
    20560316
  • 财政年份:
    2008
  • 资助金额:
    $ 24.21万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Research on technology for integrating silicon nanocrystals into photonic crystals and its application to optical devices
硅纳米晶集成光子晶体技术研究及其在光学器件中的应用
  • 批准号:
    17360153
  • 财政年份:
    2005
  • 资助金额:
    $ 24.21万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Fabrication of three-dimensional photonic crystals by autocloning
通过自动克隆制备三维光子晶体
  • 批准号:
    11450132
  • 财政年份:
    1999
  • 资助金额:
    $ 24.21万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Fabrication and analysis of fiber-integrated micro-optical switches
光纤集成微光开关的制作与分析
  • 批准号:
    09650339
  • 财政年份:
    1997
  • 资助金额:
    $ 24.21万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

相似海外基金

RF-DC Coupled Mode Bias Sputtering System
RF-DC耦合模式偏压溅射系统
  • 批准号:
    62850050
  • 财政年份:
    1987
  • 资助金额:
    $ 24.21万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research
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