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Investigation of mechanism of bias sputtering causing autocloning

偏压溅射引起自动克隆的机制研究

基本信息

批准号：
14205054
负责人：
HANAIZUMI Osamu
金额：
$ 24.21万
依托单位：
Gunma University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14205054/
关键词：
autocloning bias sputtering photonic crystal Si nanocrystal blue-light emission optical nonlinear effect SHG quasi phase matching 高周波スパッタリング二重干渉露光 CdS フォトルミネッセンス光デバイス発光素子

项目摘要

CdS two-dimensional photonic crystals were fabricated by using double-interference exposure and rf sputtering. A suppressed photoluminescence spectrum was observed normal to the surface in the wavelength range other than in-plane resonance.We developed a dry-etching process to form holes with diameters of 5 microns to 50 of microns in 7-micron thick a-Si/SiO_2 three-dimensional photonic crystal layers fabricated on InP substrates by the autocloning method. We also demonstrated wet-etching processes to remove damaged surfaces of exposed InP substrates and selectively grew In_<0.62>Ga_<0.38>As/In_<0.45>Ga_<0.31>Al_<0.24>As multiple quantum well by molecular beam epitaxy in a region surrounded by a-Si/SiO_2 three-dimensional photonic crystals. Polarization dependence was observed in a spontaneous emission transmitted at 75 microns in a lateral direction in the photonic crystal layer.We observed a photoluminescence(PL) spectrum at room temperature that had a peak with full width of half maximum(FWHM) of 0.38 eV near the bandgap energy of 3.2 eV from an Si:SiO_2 sputtered film without annealing. Blue-light emission could be seen by the naked eye. A low-intensity PL peak with FWHM of 0.20 eV was also observed at around 1.6 eV. We have already demonstrated that our method automatically forms Si clusters contributing to visible emission. Our results did not contradict the well-founded conjecture that there were two mechanisms of emission from Si clusters : emission at 1.6 to 1.7 eV due to the surface state of the oxidized Si nanocrystals and emission at the bandgap energy originating from the quantum confinement effect. Blue-light-emission from Ti:SiO_2 sputtered films was also observed at room temperature without annealing. The peaks of PL spectra were located at 3.03 to 3.05 eV and FWHM were 0.38 to 0.40 eV, which were almost the same in samples having different energies of absorption edge.

采用双干涉曝光和射频溅射的方法制备了硫化镉二维光子晶体。利用干法刻蚀技术，在InP衬底上制备了7微米厚的a-Si/SiO_2三维光子晶体薄膜，形成了直径从5微米到50微米的孔洞。我们还展示了去除暴露的InP衬底表面的湿法刻蚀工艺，并在a-Si/SiO_2三维光子晶体包围的区域内通过分子束外延选择性地生长了In_&lt；0.62&gt；Ga_&lt；0.38&gt；As/In_&lt；0.45&gt；Ga_&lt；0.31&gt；Al_&lt；0.24&gt；As多量子阱。观察到了75微米波长的光子晶体层横向自发辐射与偏振的关系。我们在室温下观察到一个半高宽为0.38 eV的光致发光峰，该峰位于未经热处理的Si：SiO_2溅射薄膜的禁带能量3.2 eV附近。肉眼可以看到蓝光的发射。在1.6 eV附近还观察到半高宽为0.20 eV的低强度发光峰。我们已经证明，我们的方法可以自动形成对可见光发射有贡献的硅团簇。我们的结果与有根据的猜测并不矛盾，即硅团簇有两种发射机制：由氧化后的硅纳米晶表面状态引起的1.6~1.7 eV处的发射和由量子限制效应产生的带隙能量处的发射。在室温下，未经热处理的Ti：SiO_2溅射薄膜也观察到蓝光发射。荧光光谱的峰值位于3.03~3.05 eV，半峰宽在0.38~0.40 eV，这在不同吸收边能量的样品中基本相同。

项目成果

期刊论文数量（34）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Optical gain in as-grown sputtered SiO_2 film containing Si-Ge nanocrystals

含有 Si-Ge 纳米晶的溅射 SiO_2 薄膜的光学增益

DOI：
发表时间：
2005
期刊：
Journal of Light and Visual Environment (掲載予定)
影响因子：
0
作者：
A.Kikuchi et al.;大橋達男他;松井聡他;C.Chaudhari
通讯作者：
C.Chaudhari

青色発光Si : SiO_2膜とそれを具備した青色発光素子ならびに青色発光Si : SiO_2膜の製造方法

蓝色发光Si:SiO_2薄膜、具备该蓝色发光器件的蓝色发光Si:SiO_2薄膜、以及蓝色发光Si:SiO_2薄膜的制造方法

DOI：
发表时间：
2002
期刊：
影响因子：
0
作者：
通讯作者：

Photonics Based on Wavelength Integration and Manipulation

基于波长积分和操纵的光子学

DOI：
发表时间：
2004
期刊：
影响因子：
0
作者：
S.Tanabe;N.Sugimoto;S.Tanabe;田部勢津久;田部勢津久;S.Tanabe;田部勢津久;S.Tanabe;田部勢津久;S.Tanabe;S.Tanabe;田部勢津久;Setsuhisa Tanabe;S.Tanabe
通讯作者：
S.Tanabe

Fabrication of CdS two-dimensional photonic crystals using rf sputtering and assessment of their emission properties

使用射频溅射制造 CdS 二维光子晶体并评估其发射特性