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Investigation of mechanism of bias sputtering causing autocloning

偏压溅射引起自动克隆的机制研究

基本信息

批准号：
14205054
负责人：
HANAIZUMI Osamu
金额：
$ 24.21万
依托单位：
Gunma University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14205054/
关键词：
autocloning bias sputtering photonic crystal Si nanocrystal blue-light emission optical nonlinear effect SHG quasi phase matching 高周波スパッタリング二重干渉露光 CdS フォトルミネッセンス光デバイス発光素子

项目摘要

CdS two-dimensional photonic crystals were fabricated by using double-interference exposure and rf sputtering. A suppressed photoluminescence spectrum was observed normal to the surface in the wavelength range other than in-plane resonance.We developed a dry-etching process to form holes with diameters of 5 microns to 50 of microns in 7-micron thick a-Si/SiO_2 three-dimensional photonic crystal layers fabricated on InP substrates by the autocloning method. We also demonstrated wet-etching processes to remove damaged surfaces of exposed InP substrates and selectively grew In_<0.62>Ga_<0.38>As/In_<0.45>Ga_<0.31>Al_<0.24>As multiple quantum well by molecular beam epitaxy in a region surrounded by a-Si/SiO_2 three-dimensional photonic crystals. Polarization dependence was observed in a spontaneous emission transmitted at 75 microns in a lateral direction in the photonic crystal layer.We observed a photoluminescence(PL) spectrum at room temperature that had a peak with full width of half maximum(FWHM) of 0.38 eV near the bandgap energy of 3.2 eV from an Si:SiO_2 sputtered film without annealing. Blue-light emission could be seen by the naked eye. A low-intensity PL peak with FWHM of 0.20 eV was also observed at around 1.6 eV. We have already demonstrated that our method automatically forms Si clusters contributing to visible emission. Our results did not contradict the well-founded conjecture that there were two mechanisms of emission from Si clusters : emission at 1.6 to 1.7 eV due to the surface state of the oxidized Si nanocrystals and emission at the bandgap energy originating from the quantum confinement effect. Blue-light-emission from Ti:SiO_2 sputtered films was also observed at room temperature without annealing. The peaks of PL spectra were located at 3.03 to 3.05 eV and FWHM were 0.38 to 0.40 eV, which were almost the same in samples having different energies of absorption edge.

采用双干涉曝光和射频溅射法制备了CdS二维光子晶体。在InP衬底上用自克隆法制备了厚度为7 μ m的a-Si/SiO_2三维光子晶体层，利用干法刻蚀技术在其表面形成了直径为5 μ m ~ 50 μ m的孔。我们还采用湿法刻蚀的方法去除了InP衬底的损伤表面，并在a-Si/SiO_2三维光子晶体的周围区域用分子束外延方法选择性地生长了In_<0.62>Ga_<0.38>As/In_<0.45>Ga_<0.31>Al_<0.24>As多量子阱。在光子晶体层中观察到横向透射75 μ m的自发辐射的偏振依赖性，在室温下观察到未经退火的Si：SiO_2溅射薄膜的光致发光（PL）谱，其半高宽（FWHM）为0.38 eV，带隙能量为3.2 eV。肉眼可见蓝光发射。在1.6 eV附近还观察到FWHM为0.20 eV的低强度PL峰。我们已经证明，我们的方法会自动形成有助于可见光发射的Si团簇。我们的研究结果并不矛盾的有充分根据的推测，有两种机制的发射从硅团簇：发射在1.6至1.7 eV由于氧化硅纳米晶体的表面状态和发射在带隙能量源自量子限制效应。Ti：SiO_2溅射薄膜在室温下未经退火也观察到蓝光发射。PL谱的峰值位于3.03 - 3.05 eV，半高宽为0.38 - 0.40 eV，这在具有不同吸收边能量的样品中几乎相同。

项目成果

期刊论文数量（34）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Optical gain in as-grown sputtered SiO_2 film containing Si-Ge nanocrystals

含有 Si-Ge 纳米晶的溅射 SiO_2 薄膜的光学增益

DOI：
发表时间：
2005
期刊：
Journal of Light and Visual Environment (掲載予定)
影响因子：
0
作者：
A.Kikuchi et al.;大橋達男他;松井聡他;C.Chaudhari
通讯作者：
C.Chaudhari

青色発光Si : SiO_2膜とそれを具備した青色発光素子ならびに青色発光Si : SiO_2膜の製造方法

蓝色发光Si:SiO_2薄膜、具备该蓝色发光器件的蓝色发光Si:SiO_2薄膜、以及蓝色发光Si:SiO_2薄膜的制造方法

DOI：
发表时间：
2002
期刊：
影响因子：
0
作者：
通讯作者：

Photonics Based on Wavelength Integration and Manipulation

基于波长积分和操纵的光子学

DOI：
发表时间：
2004
期刊：
影响因子：
0
作者：
S.Tanabe;N.Sugimoto;S.Tanabe;田部勢津久;田部勢津久;S.Tanabe;田部勢津久;S.Tanabe;田部勢津久;S.Tanabe;S.Tanabe;田部勢津久;Setsuhisa Tanabe;S.Tanabe
通讯作者：
S.Tanabe

Fabrication of CdS two-dimensional photonic crystals using rf sputtering and assessment of their emission properties

使用射频溅射制造 CdS 二维光子晶体并评估其发射特性