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Research on technology for integrating silicon nanocrystals into photonic crystals and its application to optical devices

硅纳米晶集成光子晶体技术研究及其在光学器件中的应用

基本信息

批准号：
17360153
负责人：
HANAIZUMI Osamu
金额：
$ 9.37万
依托单位：
Gunma University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17360153/
关键词：
silicon nanocrystal photonic crystal light emission sputtering ion implantation annealing optical device 光増幅エルビウム SiO_2 赤色発光超格子紫外発光

项目摘要

We deposited Si/SiO_2 multilayers having nanometer-order-thick Si and SiO_2 layers using radio-frequency sputtering and obtained ultraviolet (UV) -light emission from the samples after high-temperature annealing. In particular, we found a sharp UV peak around a wavelength of 370 nm after annealing at 1200 ℃. The UV-light emission seems to originate from Si layers, which may be transformed into Si nanocrystals (Si-nc's), and interface layers between Si-nc's and SiO_2 layers. Fused-silica substrates that emit blue light were also fabricated by using Si-ion implantation and high-temperature annealing. Their blue-photoluminescence peaks were located at around a wavelength of 400 nm. We found that the peak intensity can be over four times greater than that of the longer wavelength peak after annealing at 1200 ℃. The blue-light emission seems to originate from both Si-nc's and interface layers between Si-nc's and SiO_2 media produced in fused-silica substrates. We are trying to optimize the … More conditions of Si-ion implantation and annealing to improve the emission intensity and evaluate optical gains of the samples. UV- or blue-light emitting materials can be useful for light sources of higher-density optical-disk systems. If we realize this kind of light source utilizing Si-based materials, we will obtain many benefits, such as matching for LSI's, lower cost, and suitability for environment application.We fabricated an Si: SiO_2 two-dimensional photonic crystal that emits light at wavelengths from red to infrared by using radio-frequency sputtering, double-interference exposure, and plasma etching. An enhanced photoluminescence spectrum was observed from the sample. We found that the photoluminescence peaks were located at around a wavelength of 800 nm and that the peak intensity can be increased 1.5 times by introducing a periodic structure. Such Si: SiO_2 films with periodic structures can also be useful as substrates of autocloned photonic crystals. We will be able to realize Si-based light-emitting devices utilizing our technologies. Less

我们用射频溅射法制备了具有纳米级厚度的Si和SiO_2层的Si/SiO_2多层膜，并在高温退火后获得了紫外光发射。特别是在1200 ℃退火后，在370 nm附近发现了一个尖锐的紫外峰。紫外光的发射来源于Si层和SiO_2层之间的界面层，其中Si层可能转化为Si纳米晶（Si-nc’s）。通过Si离子注入和高温退火，还制备了发射蓝光的熔融石英衬底。它们的蓝色光致发光峰位于400 nm附近。我们发现，在1200 ℃退火后，其峰强度比长波长峰的强度大4倍以上。蓝光发射可能来源于Si-nc和Si-nc与SiO_2介质之间的界面层。我们正在努力优化 ...更多信息 Si离子注入和退火的条件，以提高发射强度和评估样品的光学增益。UV或蓝光发射材料可用于高密度光盘系统的光源。采用射频溅射、双干涉曝光和等离子体刻蚀等方法制备了Si：SiO_2二维光子晶体，该光子晶体的波长范围从红光到红外光。从样品中观察到增强的光致发光光谱。我们发现，光致发光峰位于800 nm的波长附近，并且通过引入周期性结构，峰强度可以增加1.5倍。这种具有周期性结构的Si：SiO_2薄膜也可以用作自克隆光子晶体的衬底。利用我们的技术，我们将能够实现Si基发光器件。少