Research on technology for integrating silicon nanocrystals into photonic crystals and its application to optical devices

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We deposited Si/SiO_2 multilayers having nanometer-order-thick Si and SiO_2 layers using radio-frequency sputtering and obtained ultraviolet (UV) -light emission from the samples after high-temperature annealing. In particular, we found a sharp UV peak around a wavelength of 370 nm after annealing at 1200 ℃. The UV-light emission seems to originate from Si layers, which may be transformed into Si nanocrystals (Si-nc's), and interface layers between Si-nc's and SiO_2 layers. Fused-silica substrates that emit blue light were also fabricated by using Si-ion implantation and high-temperature annealing. Their blue-photoluminescence peaks were located at around a wavelength of 400 nm. We found that the peak intensity can be over four times greater than that of the longer wavelength peak after annealing at 1200 ℃. The blue-light emission seems to originate from both Si-nc's and interface layers between Si-nc's and SiO_2 media produced in fused-silica substrates. We are trying to optimize the … More conditions of Si-ion implantation and annealing to improve the emission intensity and evaluate optical gains of the samples. UV- or blue-light emitting materials can be useful for light sources of higher-density optical-disk systems. If we realize this kind of light source utilizing Si-based materials, we will obtain many benefits, such as matching for LSI's, lower cost, and suitability for environment application.We fabricated an Si: SiO_2 two-dimensional photonic crystal that emits light at wavelengths from red to infrared by using radio-frequency sputtering, double-interference exposure, and plasma etching. An enhanced photoluminescence spectrum was observed from the sample. We found that the photoluminescence peaks were located at around a wavelength of 800 nm and that the peak intensity can be increased 1.5 times by introducing a periodic structure. Such Si: SiO_2 films with periodic structures can also be useful as substrates of autocloned photonic crystals. We will be able to realize Si-based light-emitting devices utilizing our technologies. Less