Room-Temperature Selective Homoepitaxial Growth of Functional Oxide Thin Films Induced by Electron Beam Irradiation and Its Application

电子束辐照诱导功能氧化物薄膜的室温选择性同质外延生长及其应用

• 批准号: 14350347
• 负责人: YOSHIMOTO Mamoru
• 金额: $ 5.06万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350347/
• 关键词: electron beam; irradiation; oxide; thin film; room temperature; micro-pattern; crystal growth; epitaxial film; 常温; 応用; 電子線照射; 常温成長; エピタキシャル; アルミナ; レーザーアブレーション; 常温結晶成長

The surface micro-structure of sapphire (Al2O3) substrates could be constructed at room temperature via selective sapphire homoepitaxial growth induced by electron beam irradiation in laser molecular beam epitaxy. The films grew homoepitaxially on sapphire (10-12) substrates even at room temperature only in the region electron-irradiated during film deposition, while amorphous aluminum oxide films were grown at the non-irradiated area. The surface micro-patterns on sapphire substrates were easily obtained by the selective H3PO4 wet-etching of the modified sapphire surface coated with crystalline and amorphous film. The micro-scale wall and groove could be fabricated on the sapphire substrates at room temperature.

通过激光分子束外延中电子束照射诱导的选择性蓝宝石同质外延生长，可以在室温下构建蓝宝石（Al2O3）衬底的表面微结构。即使在室温下，薄膜也仅在薄膜沉积过程中受电子辐射的区域在蓝宝石（10-12）衬底上同质外延生长，而非晶氧化铝薄膜在非辐射区域生长。通过对涂覆有晶态和非晶态薄膜的改性蓝宝石表面进行选择性H3PO4湿法刻蚀，很容易获得蓝宝石衬底上的表面微图案。可以在室温下在蓝宝石衬底上制造微尺度的壁和凹槽。

项目成果

Room-Tomperatuse growth of ultrcsmooth seN epitaxial thin Films on Sapphire with NiO batler layer

带有 NiO 层的蓝宝石上超光滑 SeN 外延薄膜的室温生长

• 发表时间: 2004
• 期刊: J. Mater. Res. 19(9)
• 作者: A.Sasaki;J.Liu;W.Hara;S.Akiba;K.Saito;T.Yodo;M.Yoshimoto
• 通讯作者: M.Yoshimoto

Structural analysis of NiO ultra-thin films epitaxially grown on ultra-smooth sapphire substrates by synchrotroi X-ray diffraction measurements

通过同步X射线衍射测量在超光滑蓝宝石衬底上外延生长的NiO超薄膜的结构分析

• 发表时间: 2003
• 期刊: Applied Surface Science 221
• 作者: O.Sakata;Min-Su Yi;A.Matsuda;J.Liu;S.Sato;S.Akiba;A.Sasaki;M.Yoshimoto
• 通讯作者: M.Yoshimoto

Room-Temperature epitaxial Growth of Indium tin oxide thin films on Si substrates with an epitaxial CeO_2 ultrathin buffer

使用外延CeO_2超薄缓冲剂在Si衬底上室温外延生长氧化铟锡薄膜

• 发表时间: 2002
• 期刊: Thin Solid Films 415
• 作者: J.Tashiro;A.Sasaki;Aiba;S.Sato;T.Watanabe;H.Funakabe;M.Yoshimoto
• 通讯作者: M.Yoshimoto

Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer

• DOI: 10.1557/jmr.2004.0346
• 发表时间: 2004-09
• 期刊: Journal of Materials Research
• 影响因子: 2.7
• 作者: A. Sasaki;Jin Liu;W. Hara;S. Akiba;Keisuke Sauto;T. Yodo;M. Yoshimoto

Nanosca;e Epitaxial Growth Contral of Oxide thin Films by Laser Molewlar Bown Epitqxy toeaeds Oxide Nanoclectwnics

激光分子弓外延法控制氧化物薄膜的纳米尺度外延生长氧化物纳米电子学

• 发表时间: 2004
• 期刊: Science ＆ Technologg of Advanced Materiols 5(4)
• 作者: M.Yoshimoto;A.Sasaki;S.Akiba
• 通讯作者: S.Akiba