Room-Temperature Selective Homoepitaxial Growth of Functional Oxide Thin Films Induced by Electron Beam Irradiation and Its Application

在激光分子束外延中，通过电子束辐照诱导的蓝宝石同质外延生长，可以在室温下构建蓝宝石(Al2+)衬底的表面微结构。在蓝宝石(10-12)衬底上生长的薄膜即使在室温下也只在薄膜沉积过程中的电子辐照区域生长，而在非辐照区域生长非晶态氧化铝薄膜。在蓝宝石表面涂覆晶态和非晶态薄膜，通过选择性H3PO4湿法刻蚀，可以很容易地在蓝宝石衬底上获得表面微图形。在室温下可以在蓝宝石衬底上制作出微尺度的壁面和沟槽。

The surface micro-structure of sapphire (Al2O3) substrates could be constructed at room temperature via selective sapphire homoepitaxial growth induced by electron beam irradiation in laser molecular beam epitaxy. The films grew homoepitaxially on sapphire (10-12) substrates even at room temperature only in the region electron-irradiated during film deposition, while amorphous aluminum oxide films were grown at the non-irradiated area. The surface micro-patterns on sapphire substrates were easily obtained by the selective H3PO4 wet-etching of the modified sapphire surface coated with crystalline and amorphous film. The micro-scale wall and groove could be fabricated on the sapphire substrates at room temperature.