Room-Temperature Selective Homoepitaxial Growth of Functional Oxide Thin Films Induced by Electron Beam Irradiation and Its Application

电子束辐照诱导功能氧化物薄膜的室温选择性同质外延生长及其应用

• 批准号: 14350347
• 负责人: YOSHIMOTO Mamoru
• 金额: $ 5.06万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350347/
• 关键词: electron beam; irradiation; oxide; thin film; room temperature; micro-pattern; crystal growth; epitaxial film; 常温; 応用; 電子線照射; 常温成長; エピタキシャル; アルミナ; レーザーアブレーション; 常温結晶成長

The surface micro-structure of sapphire (Al2O3) substrates could be constructed at room temperature via selective sapphire homoepitaxial growth induced by electron beam irradiation in laser molecular beam epitaxy. The films grew homoepitaxially on sapphire (10-12) substrates even at room temperature only in the region electron-irradiated during film deposition, while amorphous aluminum oxide films were grown at the non-irradiated area. The surface micro-patterns on sapphire substrates were easily obtained by the selective H3PO4 wet-etching of the modified sapphire surface coated with crystalline and amorphous film. The micro-scale wall and groove could be fabricated on the sapphire substrates at room temperature.

蓝宝石（AL2O3）底物的表面微观结构可以在室温下通过选择性蓝宝石同育生长在激光分子束外部播放中诱导的同性恋同性恋生长。这些薄膜在蓝宝石（10-12）底物上的同性恋在膜沉积期间被电子形成区域的室温生长，而在非辐射区域则种植了无定形的氧化铝膜。通过选择性H3PO4湿蚀刻的改良蓝宝石表面涂有晶体和无定形膜的改良蓝宝石表面，很容易获得蓝宝石底物上的表面微图案。微型尺寸的墙壁和凹槽可以在室温下在蓝宝石底物上制造。

项目成果

Structural analysis of NiO ultra-thin films epitaxially grown on ultra-smooth sapphire substrates by synchrotroi X-ray diffraction measurements

通过同步X射线衍射测量在超光滑蓝宝石衬底上外延生长的NiO超薄膜的结构分析

• 发表时间: 2003
• 期刊: Applied Surface Science 221
• 作者: O.Sakata;Min-Su Yi;A.Matsuda;J.Liu;S.Sato;S.Akiba;A.Sasaki;M.Yoshimoto
• 通讯作者: M.Yoshimoto

Room-Tomperatuse growth of ultrcsmooth seN epitaxial thin Films on Sapphire with NiO batler layer

带有 NiO 层的蓝宝石上超光滑 SeN 外延薄膜的室温生长

• 发表时间: 2004
• 期刊: J. Mater. Res. 19(9)
• 作者: A.Sasaki;J.Liu;W.Hara;S.Akiba;K.Saito;T.Yodo;M.Yoshimoto
• 通讯作者: M.Yoshimoto

Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer

• DOI: 10.1557/jmr.2004.0346
• 发表时间: 2004-09
• 期刊: Journal of Materials Research
• 影响因子: 2.7
• 作者: A. Sasaki;Jin Liu;W. Hara;S. Akiba;Keisuke Sauto;T. Yodo;M. Yoshimoto

Room-Temperature epitaxial Growth of Indium tin oxide thin films on Si substrates with an epitaxial CeO_2 ultrathin buffer

使用外延CeO_2超薄缓冲剂在Si衬底上室温外延生长氧化铟锡薄膜

• 发表时间: 2002
• 期刊: Thin Solid Films 415
• 作者: J.Tashiro;A.Sasaki;Aiba;S.Sato;T.Watanabe;H.Funakabe;M.Yoshimoto
• 通讯作者: M.Yoshimoto

Fabrication of Micro-patterns on Sapphire Substrates via Room-Temperature Selective Homoepitaxial Growth Induced by Electron Beam Irradiation

通过电子束辐照诱导室​​温选择性同质外延生长在蓝宝石衬底上制造微图案

• 发表时间: 2002
• 期刊: Jpn. J. Appl. Phys. 41
• 作者: A.Sasaki;H.Isa;J.Liu;M.Yoshimoto
• 通讯作者: M.Yoshimoto