Room-Temperature Selective Homoepitaxial Growth of Functional Oxide Thin Films Induced by Electron Beam Irradiation and Its Application

在激光分子束外延中，利用电子束辐照诱导蓝宝石选择性同外延生长，可以在室温下构建蓝宝石（Al2O3）衬底的表面微观结构。在蓝宝石（10-12）衬底上，即使在室温下，薄膜也仅在薄膜沉积过程中电子辐照的区域内呈均匀外延生长，而非晶态氧化铝薄膜在非辐照区域生长。采用H3PO4选择性湿法刻蚀改性后的蓝宝石表面，可获得晶态和非晶态的表面微图案。在室温下，可以在蓝宝石衬底上制备微尺度的壁和槽。

The surface micro-structure of sapphire (Al2O3) substrates could be constructed at room temperature via selective sapphire homoepitaxial growth induced by electron beam irradiation in laser molecular beam epitaxy. The films grew homoepitaxially on sapphire (10-12) substrates even at room temperature only in the region electron-irradiated during film deposition, while amorphous aluminum oxide films were grown at the non-irradiated area. The surface micro-patterns on sapphire substrates were easily obtained by the selective H3PO4 wet-etching of the modified sapphire surface coated with crystalline and amorphous film. The micro-scale wall and groove could be fabricated on the sapphire substrates at room temperature.