Epitaxial Growth and Electrical Property of Compositionally-modulated Boride Thin Films

成分调制硼化物薄膜的外延生长和电性能

• 批准号: 21560029
• 负责人: YOSHIMOTO Mamoru
• 金额: $ 3万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21560029/
• 关键词: ホウ化物; エピタキシャル薄膜; 組成変調; パルスレーザーアブレーション; 半導体的電子機能; 積層化; ドーピング; レーザーMBE; 熱電変換機能

In this study, epitaxial thin film of various hexaboride series including LaB6, BaB6, SrB6, CaB6,(La, Sr) B6, and(Sr, Ca) B6 s were fabricated successfully by means of laser molecular beam epitaxy(laser MBE). These epitaxial boride thin films are expected wide applications such as thermoelectric conversion materials, a high current density field emission flat source, and high-temperature electronic devices. Through the various film processing such as substrate-surface engineering were applied for development of film epitaxy, we could obtain the knowledge on the new material science concerning with the crystal growth of boron-octahedron cluster structure.

本研究利用激光分子束外延技术成功地制备了LaB6、BaB6、SrB6、CaB6、（La，Sr）B6和（Sr，Ca）B6系列六硼化物外延薄膜。这些硼化物薄膜在热电转换材料、高电流密度场发射平面源、高温电子器件等方面有着广泛的应用前景。通过各种薄膜处理技术如衬底表面工程学的应用，发展薄膜外延技术，我们可以获得与硼八面体簇结构晶体生长有关的新材料科学知识。

项目成果

Constriction of lattice constant in epitaxial magnesium oxide thin film

外延氧化镁薄膜晶格常数的收缩

• 发表时间: 2010
• 期刊: J. Appl. Phys.
• 作者: S. Kaneko;T. Nagano;K. Akiyama;T. Ito;M. Yasui;Y. Hirabayashi;H. Funakubo;and M. Yoshimoto
• 通讯作者: and M. Yoshimoto

Crystal Growth Control of Functional Oxide Thin Films on Nanopatterned Substrate Surfaces

纳米图案基底表面上功能性氧化物薄膜的晶体生长控制

• 发表时间: 2009
• 期刊: J. Laser Micro/Nanoengineering
• 作者: Y. Akita;Y. Sugimoto;K. Kobayashi;T. Suzuki;H. Oi;M. Mita and M. Yoshimoto
• 通讯作者: M. Mita and M. Yoshimoto

Nanoimprint Fabrication and Thermal Behavior of Atomically Ultrasmooth Glass Substrate with 0.2nm-Height Steps

0.2nm 高度台阶的原子级超光滑玻璃基板的纳米压印制造和热行为

• 发表时间: 2011
• 期刊: Jpn.J.Appl.Phys.
• 作者: Y.Miyake;Y.Akita;H.Oi;M.Mita;S.Kaneko;K.Koyama;K.Sunagawa;K.Tada;Y.Hirai;M.Yoshimoto
• 通讯作者: M.Yoshimoto

PLDによる不純物ドープMgOエピタキシャル薄膜の室温合成と評価

PLD 掺杂 MgO 外延薄膜的室温合成与评价

• 发表时间: 2009
• 作者: 坂本純一;et al.;春木一夫,渡辺将章,佐藤英樹,齋藤弥八;荒井秀樹,加藤侑志,白石尚輝,土嶺信男,小林晋,吉本護
• 通讯作者: 荒井秀樹,加藤侑志,白石尚輝,土嶺信男,小林晋,吉本護

Room-Temperature Epitaxial Growth of (Li,Ni)O Thin Film with Li Content up to 60 mol %

室温%20外延%20生长%20of%20(Li,Ni)O%20薄%20薄膜%20with%20Li%20含量%20up%20to%2060%20mol%20%

• DOI: 10.1143/jjap.49.108001
• 发表时间: 2010
• 作者: N. Shiraishi;Yushi Kato;H. Arai;Nobuo Tsuchimine;Susumu Kobayashi;M. Mitsuhashi;M. Soga;S. Kaneko;M. Yoshimoto
• 通讯作者: M. Yoshimoto