New Technique for measuring electron density under soiled conditions and its application for precise process control

污染条件下电子密度测量新技术及其在精确过程控制中的应用

• 批准号: 11558052
• 负责人: NAKAMURA Keiji
• 金额: $ 5.7万
• 依托单位: Chubu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11558052/
• 关键词: Plasma absorption probe; Surface wave resonance; Dielectric tube; Sheath; Dispersion relation; Debye length; Fluorocarbon plasma; 膜堆積; フロンプラズマ; パワー吸収スペクトル

In a fabrication of sub micron struction for next-generation ULSI devices, extremely stable and controlled plasma sources for various processing such as etching should be developed in order to improve fabrication accuracy. To achieve that, feed-back control of the plasma by monitoring the plasma condition is preferable. In the present reseach, as a conventional but powerful tool for electron density monitoring, we have, developed the "Plasma Absorption Probe" usable even in the process plasma of soiled conditions.In the probe, surface waves are excited at the probe tip, and a part of RF powers supplied to the probe tip is resonantly absorbed to the plasma through the surface waves at several frequencies. The absorption frequencies directly gives resonant frequency of the surface wave, in turn electron density. Considering the sheath formed around the probe, the probe enables us to measure the electron density in the wide electron density range from 10^<14> m^<-3> to over 10^<18> m^<-3> in actual fluorocarbon etching plasmas.

在亚微米结构的下一代ULSI器件的制造中，为了提高制造精度，应该开发用于各种加工（如蚀刻）的极其稳定和可控的等离子体源。为了实现这一目标，通过监测等离子体状态对等离子体进行反馈控制是可取的。在本研究中，我们开发了一种传统但功能强大的电子密度监测工具“等离子体吸收探针”，即使在污染条件下的过程等离子体中也可以使用。在探针中，表面波在探针尖端被激发，提供给探针尖端的部分射频功率通过表面波在几个频率上共振吸收到等离子体中。吸收频率直接给出表面波的共振频率，进而给出电子密度。考虑到探针周围形成的护套，该探针使我们能够测量实际氟碳蚀刻等离子体中从10^<14> m^<-3>到超过10^<18> m^<-3>的宽电子密度范围内的电子密度。

项目成果

K.Nakamura 他1名: "Control of Wall Polymer Deposition and Stabilization of Radical Density in Fluorocarbon Inductively-Coupled Plasmas"Int Symp.Dry Process 2001. 213-218 (2001)

K. Nakamura 等人：“氟碳感应耦合等离子体中壁聚合物沉积的控制和自由基密度的稳定” Int Symp. 2001. 213-218 (2001)

糟谷,中村 他7名: "プラズマ吸収プローブを用いた有磁場プラズマの電子密度測定"電気関係学会東海支部連合大会. 63 (2000)

Kasuya，Nakamura等7人：“使用等离子体吸收探针测量磁场等离子体中的电子密度”电气工程学会东海分会联合会63（2000）。

M.Ohata 他3名: "Monitoring Electron Density by Plasma Absorption Probe"25th Int Conf.Phenomena in Ionized Gases. 275-277 (2001)

M.Ohata 和其他 3 人：“通过等离子体吸收探针监测电子密度”25th Int Conf.Phenomena in Ionized Gases 275-277 (2001)

M.Ohta, K.Mizuno, K.Nakamura, H.Sugai: "Monitoring Electron Density by Plasma Absorption Probe"Proc.25th Int.Conf.Phenomena in Ionized Gases. Vol.4. 275-277 (2001)

M.Ohta、K.Mizuno、K.Nakamura、H.Sugai：“通过等离子体吸收探针监测电子密度”Proc.25th Int.Conf.Phenomena in ionized Gases。

K.Nakamura他1名: "Control of Wall Plymer Deposition and Stabilization of Radical Density in Fluorocarbon Inductively-Coupled Plasmas"Int. Symp. Dry Process 2001 (November 2001, Japan). 213-218 (2001)

K. Nakamura 等人 1：“氟碳感应耦合等离子体中的壁聚合物沉积和自由基密度的稳定”Int. Dry Process 2001（2001 年 11 月，日本）。