Surface Modification and Behavior of Ions and Radicals in Plasma Immersion Ion Implantation

等离子体浸没离子注入中离子和自由基的表面改性和行为

• 批准号: 13680564
• 负责人: NAKAMURA Keiji
• 金额: $ 2.69万
• 依托单位: Chubu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13680564/
• 关键词: plasma; ion implantation; PIII; secondary electron; SEEC; vacuum ultraviolet; VUV; pulse modulated discharge

Plasma immersion ion implantation (PIII) has been focused as a novel technique for large-area and/or three-dimensional surface modification. However, there are various problems such as process repeatability and so on. In the present study, surface modification and its in-process monitoring were investigated to solve the problems of the PIII process. The process monitoring was based on measurements of secondary electron emission coefficient (SEEC) of the ion-implanted surface. The SEEC were measured by comparing the total target current to the secondary electron current obtained with a semiconductor detector directly immersed into the plasma. This technique enabled us to measure the SEEC with a displacement current, discriminated.In argon-diluted oxygen plasma, the SEEC of silicon and copper increased with the processing time in proportion to amount of the implanted oxygen, however the SEEC gradually saturated because the oxygen implantation balanced with ion sputtering of the target surface. On the other hand, in helium-diluted BF3 plasma, the SEEC of silicon decreased with the processing time proportionally to amount of the implanted boron. The results revealed that the SEEC measurements could be applied to in-process monitoring of implanted element existing the target surface.Optical emission from the plasma had a significant influence on the SEEC since it included vacuum-ultra-violet (VUV) emission whose photon energy is large enough to induce photo electron emission at the irradiated surface. In the present experiments, the VUV emission made the SEEC approximately twice, and the SEEC was sometimes larger than 10. Therefore most of energies supplied to implant ions were consumed for the secondary electron current. To solve the problem, pulse modulation of the discharge was proposed because the optical emission intensity could be reduced with the ion flux kept.

等离子体浸没离子注入（PIII）作为一种新的大面积和/或三维表面改性技术已受到关注。本研究针对PIII工艺存在的问题，对PIII表面改性及其在线监测进行了研究。过程监测是基于离子注入表面的二次电子发射系数（SEEC）的测量。通过比较总靶电流与直接浸入等离子体中的半导体检测器获得的二次电子电流来测量SEEC。在氩-稀氧等离子体中，硅和铜的SEEC随处理时间的增加与注入氧的量成正比，但由于氧的注入与靶表面的离子溅射相平衡，SEEC逐渐饱和。另一方面，在氦稀释的BF 3等离子体中，硅的SEEC随着处理时间成比例地降低到注入硼的量。结果表明，等离子体的光辐射对SEEC有重要影响，因为等离子体的光辐射包括真空紫外（VUV）辐射，其光子能量大到足以在辐照表面产生光电子发射。在目前的实验中，真空紫外辐射使SEEC约为两倍，有时SEEC大于10。因此，注入离子所需的能量大部分被二次电子流所消耗。为了解决这一问题，提出了脉冲调制放电，因为它可以降低光发射强度，同时保持离子通量。

项目成果

K. Nakamura, M. Ando and H. Sugai: "Photon-Enhanced Secondary Electron Emission at Target in Plasma Immersion Ion Implantation"Nuclear Instruments and Method B. (to be published).

K. Nakamura、M. Ando 和 H. Sugai：“等离子体浸没离子注入中目标处的光子增强二次电子发射”核仪器和方法 B.（待出版）。

K. Nakamura, M. Tanaka and H. Sugai: "Energy Measurements of Sheath-Accelerated Secondary Electrons in Plasma Immersion Ion Implantation"Surface and Coating Technology. (to be published).

K. Nakamura、M. Tanaka 和 H. Sugai：“等离子体浸没离子注入中鞘加速二次电子的能量测量”表面和涂层技术。

K.Nakamura et al.: "Photon Effects on Secondary Electron Emission Coefficient in Plasma Immersion Ion Implantation"13th Int. Conf. Ion Beam Modification of Materials (IBMM2002) (September 2002, Japan). 60-61 (2002)

K.Nakamura 等人：“等离子体浸没离子注入中二次电子发射系数的光子效应”13th Int。

K.Nakamura他2名: "In-situ Monitoring of Incident Ion Flux and Ion-Implanted Surface in Plasma Immersion Ion Implantation"Frontiers of Surface Engineering 2001(October 2001, Japan). 210 (2001)

K. Nakamura 和其他 2 人：“等离子体浸没离子注入中事件离子通量和离子注入表面的原位监测”Frontiers of Surface Engineering 2001（2001 年 10 月，日本）210（2001 年）。

K.Nakamura et al.: "Direct measurements of sheath-accelerated secondary electrons for monitoring the incident ion flux in plasma immersion ion implantation"Plasma Sources Science and Technology. 11. 161-164 (2002)

K.Nakamura 等人：“用于监测等离子体浸没离子注入中入射离子通量的鞘加速二次电子的直接测量”等离子源科学与技术。