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Photo-enhanced magnetization in semiconductors thin films incorporating magnetic dots

包含磁点的半导体薄膜中的光增强磁化

基本信息

批准号：
12450007
负责人：
MUNEKATA Hiroo
金额：
$ 9.22万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2003
项目状态：
已结题

项目摘要

Enhancement of magnetization by the light illumination at room temperature (RT) has been reported in the year 2000 for semiconductor-magnetic composite films prepared by the alternative deposition of Fe and GaAs on GaAs(001) substrates at high substrate temperature of 580 "C. While this was a very encouraging achievement for the future applications such as the wireless micro-electronic mechanical system, the origin of the photo-enhanced magnetization (PEM) has remained unclear. It was partly because of the fact that those samples consisted of polycrystalline, granular structures whose constituent ingredients were not well engineered nor controlled. This research was initiated with the aim to identify the key materials and elucidate the mechanism of PEM.Systematic studies of samples prepared by the alternative deposition of Fe_3Ga_<2-x>As_x and GaAs were carried out with various deposition sequences and different substrate temperatures T_<s-> GaN-based composite structures were also inv … More estigated. It was found that the samples prepared by molecular beam deposition with the stacking the unit of [100-nm GaAs/50-nm Fe_3Ga_<2-x>As_x/100-nm GaAs] at T_s = 600℃ exhibit significant PEM effect. Metallurgical evaluation by nano-electron probe analysis has revealed that metamagnetic metal Fe_3Ga_4 is responsible for the observed PEM. It was discussed that this compound was formed as a consequence of the interlayer diffusion process between GaAs and Fe_3Ga_<2-x>As. The hypothesis of the inter-particle interaction model, which was introduced at the initial stage of the study in 2000. was found not to be the principle mechanism for the observed PEM effect.Systematic studies on power dependence of PEM suggest that the increase of magnetization is primarily dominated by the light-induced heating, whereas pure photonic excitation may also contribute the PEM, as manifested itself by the fact that the magnitude of PEM exceeds beyond the maximum value that can be expected from simple heating. This novel effect should be pursued in the future work. Less

2000年，人们报道了在580℃的高温下，Fe和GaAs交替沉积在GaAs(001)衬底上制备的半导体-磁性复合薄膜的室温光照(RT)增强磁化作用。虽然这对于无线微电子机械系统等未来的应用来说是一个非常令人鼓舞的成就，但光增强磁化(PEM)的起源仍然不清楚。这在一定程度上是因为这些样品由多晶、颗粒状结构组成，这些结构的组成成分没有经过很好的设计或控制。本研究的目的是确定…的关键材料，并阐明PEM的作用机理。系统地研究了不同沉积顺序和不同衬底温度下交替沉积Fe_3Ga_&Lt；2-x&Gt；As_x和GaAs的GaN基复合结构。更多的调查。结果表明，当T_S=600℃时，以[100nmGaAs/50nmFe3Gat；2-x&Gt；Asx/100nmGaAs]为堆积单元的分子束沉积样品具有明显的质子交换膜效应。经纳米电子探针分析的金相分析表明，偏磁金属Fe3Ga4是产生PEM的原因。讨论了这种化合物的形成是由于GaAs和Fe3Ga2-x&Gt；As之间的层间扩散过程的结果。粒子间相互作用模型的假设，这是在2000年研究的初始阶段引入的。对PEM功率依赖性的系统研究表明，磁化强度的增加主要是由光感应加热引起的，而纯粹的光子激发也可能对PEM有贡献，这表现在PEM的大小超过了简单加热所能预期的最大值。这种新颖的效果应该在今后的工作中继续追求。较少