Manipulation of ferromagnetically coupled spin system with light and its applications

光操纵铁磁耦合自旋系统及其应用

基本信息

  • 批准号:
    14076210
  • 负责人:
  • 金额:
    $ 54.72万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
  • 财政年份:
    2002
  • 资助国家:
    日本
  • 起止时间:
    2002 至 2005
  • 项目状态:
    已结题

项目摘要

(1) Ferromagnetic semiconductorsEffect of nitrogen doping in (Ga,Mii)As epitaxial films was investigated aiming at controlling Curie temperature Tc during the growth process. Two effects were found : firstly, inducement of perpendicular magnetic anisotropy due to a slight lattice shrinkage ; secondly, reduction of Tc due to the localization of hole carriers. The growth method to enhance Mn contents, with post annealing, was developed successfully, which resulted in highest Curie temperature of Tc = 90 K for (In,Mn)As.(2) light-induced precessions of magntizationWell controlled experiments and analysis with LLG equations were carried out to elucidate light-induced precession in (Ga,Mri)As. It became clear that optical excitation induced a change in magnetic anisotropy, which caused a change in an effective magnetic and thus precession. It was concluded that the observed phenomenon is caused not by the light-induced increase in temperate but by the optical excitation.(3) Direct observation of light-induced rotation of magnetizationThe development of scanning laser magneto-optical microscope has reached at the stage of testing its performance with (Ga,Mn)As. Domain structures of the in-plane magnetization was observed successfully. Direct imaging of magnetization rotation induced by circularly-polarized light was achieved for the first time. That unpolarized light did not cause rotation strongly suggested that this phenomenon was not induced by the light-induced heating of samples.(4) Spin photovoltaic effectA n-AlGaAs/p-InGaAs heterostructure diode showing relatively large circularly-polarized-light-dependent photocurrent (>50 nA) was demonstrated successfully for the first time. Theoretical analysis using both heterojunction transport and solar cell model accommodating MCD-effect was also developed, by which importance of discontinuity in band edge profile was discussed quantitatively.
(1)研究了氮掺杂对(Ga,Mii)As外延薄膜居里温度Tc的影响。发现了两种影响:第一,由于轻微的晶格收缩而诱发垂直磁各向异性,第二,由于空穴载流子的局部化而降低Tc。成功地开发了提高Mn含量的后退火生长方法,使(In,Mn)As的居里温度达到最高值Tc = 90 K。(2)本文对(Ga,Mri)As的光致磁旋进进行了良好的控制实验和LLG方程分析。很明显,光激发引起了磁各向异性的变化,这导致了有效磁场的变化,从而导致了进动。结果表明,所观察到的现象不是由光诱导的温度升高,而是由光激发引起的。(3)直接观察光致磁化旋转扫描激光磁光显微镜的发展已达到用(Ga,Mn)As测试其性能的阶段。成功地观察到了面内磁化的畴结构。首次实现了圆偏振光诱导的磁化旋转的直接成像。非偏振光没有引起旋转,这强烈表明这种现象不是由样品的光致加热引起的。(4)自旋光伏效应首次成功地研制出具有较大的圆偏振光依赖光电流(>50 nA)的n-AlGaAs/p-InGaAs异质结二极管。利用异质结输运和考虑MCD效应的太阳电池模型进行了理论分析,定量讨论了带边轮廓不连续性的重要性。

项目成果

期刊论文数量(111)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Investigation of spin voltaic effect in a p-n heterofunction
p-n 异质函数中自旋伏特效应的研究
" Utrafast Magneto-Optics in Ferromagnetic In-V Semiconductors " (Topical Review)
“铁磁 In-V 半导体中的超快磁光”(专题评论)
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    J.Wang;C.Sun;Y.Hashimoto;J.Kono;G.A.Khodaparast;L.Cywirisld;L.J.Sham;G.D.Sanders;C.J.Stanton;H.Munekata
  • 通讯作者:
    H.Munekata
スピンエレクトロニクスの基礎と最前線 第7章「磁性半導体の光磁化と光操作」(猪俣浩一郎監修)
自旋电子学的基础与前沿第7章“磁性半导体的光学磁化和光学操纵”(猪又晃一郎指导)
  • DOI:
  • 发表时间:
    2004
  • 期刊:
  • 影响因子:
    0
  • 作者:
    H.Aikawa;K.Kobayashi;A.Sano;S.Katsumoto;Y.Iye;宗片 比呂夫
  • 通讯作者:
    宗片 比呂夫
Photo-induced changes in magnetization orientation in (Ga,Mn)As observed directly by a scanning laser magneto-optical microscope
  • DOI:
    10.1002/pssc.200672875
  • 发表时间:
    2006-12
  • 期刊:
  • 影响因子:
    0
  • 作者:
    T. Kondo;K. Nomura;G. Koizumi;H. Munekata
  • 通讯作者:
    T. Kondo;K. Nomura;G. Koizumi;H. Munekata
Light‐induced precession of ferromagnetically coupled Mn spins in ferromagnetic (Ga,Mn)As
  • DOI:
    10.1002/pssc.200672884
  • 发表时间:
    2006-12
  • 期刊:
  • 影响因子:
    0
  • 作者:
    H. Takechi;A. Oiwa;K. Nomura;T. Kondo;H. Munekata
  • 通讯作者:
    H. Takechi;A. Oiwa;K. Nomura;T. Kondo;H. Munekata
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MUNEKATA Hiroo其他文献

MUNEKATA Hiroo的其他文献

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{{ truncateString('MUNEKATA Hiroo', 18)}}的其他基金

Semiconductor Nanospintronics
半导体纳米自旋电子学
  • 批准号:
    14076103
  • 财政年份:
    2002
  • 资助金额:
    $ 54.72万
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
Photo-enhanced magnetization in semiconductors thin films incorporating magnetic dots
包含磁点的半导体薄膜中的光增强磁化
  • 批准号:
    12450007
  • 财政年份:
    2000
  • 资助金额:
    $ 54.72万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Preparation of magnetic-semiconductor hybrid super-structures and exploration of novel physical effects
磁半导体混合超结构的制备及新型物理效应的探索
  • 批准号:
    07455006
  • 财政年份:
    1995
  • 资助金额:
    $ 54.72万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of galvanomagnetic and magneto-optical devices with III-V-based diluted magnetic semiconductors
使用 III-V 族稀磁半导体开发电磁和磁光器件
  • 批准号:
    07555004
  • 财政年份:
    1995
  • 资助金额:
    $ 54.72万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)

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Creation of New Spin-Functional Materials and Devices by Renaissance of Ferromagnetic Semiconductors
通过铁磁半导体的复兴创造新的自旋功能材料和器件
  • 批准号:
    20H05650
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Developing and Applications of Spintronics Materials by Growing Narrow-Gap Ferromagnetic Semiconductors
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研究铁磁半导体中诱发的非常规超导现象
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    17K05492
  • 财政年份:
    2017
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    $ 54.72万
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    Grant-in-Aid for Scientific Research (C)
Spin-functional materials and devices using narrow-gap ferromagnetic semiconductors
使用窄带隙铁磁半导体的自旋功能材料和器件
  • 批准号:
    16K14224
  • 财政年份:
    2016
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    $ 54.72万
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Research on semiconductor spin devices with ferromagnetic semiconductors
铁磁半导体半导体自旋器件研究
  • 批准号:
    15H03988
  • 财政年份:
    2015
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施主共掺杂铁磁半导体及其器件
  • 批准号:
    26600068
  • 财政年份:
    2014
  • 资助金额:
    $ 54.72万
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    Grant-in-Aid for Challenging Exploratory Research
Disorder in ferromagnetic semiconductors (B12*)
铁磁半导体中的无序 (B12*)
  • 批准号:
    248128977
  • 财政年份:
    2014
  • 资助金额:
    $ 54.72万
  • 项目类别:
    Collaborative Research Centres
Study of 3D local structures around magnetic elements in room temperature ferromagnetic semiconductors
室温铁磁半导体中磁性元件周围的 3D 局部结构研究
  • 批准号:
    25286040
  • 财政年份:
    2013
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Fe基载流子感应铁磁半导体及其在下一代自旋器件中的应用
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    24686040
  • 财政年份:
    2012
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Spin Transfer Torque in Ferromagnetic Semiconductors and Hybrid Devices for Nanospintronics
铁磁半导体和纳米自旋电子学混合器件中的自旋转移力矩
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  • 财政年份:
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  • 资助金额:
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  • 项目类别:
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