Preparation of magnetic-semiconductor hybrid super-structures and exploration of novel physical effects
Preparation of magnetic-semiconductor hybrid super-structures and exploration of novel physical effects
批准号:
07455006
负责人:
MUNEKATA Hiroo
金额:
$4.93万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996
中文摘要
本研究旨在为由半导体材料(硅、III-V和II-VI化合物)和各种磁性材料组成的磁-半导体杂化超结构的制备和设计提供知识,并基于载流子自旋与磁性离子之间的相互作用寻求新的物理效应。1)表征了一系列(In, Mn) as基稀释磁性半导体异质结构,发现载流子(空穴)浓度和异质结构参数对磁性能有很强的依赖性。2)在(in, Mn) As/GaSb异质结构中发现了光致铁磁性。得出的结论是,这种现象是基于多余的载流子产生的光照射。3)开始用(In, Mn) as基异质结构制造场效应器件。4)重新分析了EXAFS数据,确定了均匀(in, Mn) As中的局部Mn结构(MnAs_4)。5)研究了(in, Mn) As/ (Al, Ga) Sb异质结构中的磁克尔效应,阐明了能带结构与光学响应的关系。6)研究了(In, Mn) As: MnAs薄膜的电学行为,发现铁磁性的MnAs簇可以强烈地改变(In, Mn) As层中的载流子输运。7)制备并表征了新型宽间隙杂化超结构ZnSe/Fe多层结构,并在磁光光谱中发现了与组成材料无关的新特征。8)考虑过新型磁光器件和信息存储器件的概念。
英文摘要
The research has been carried out with the aim to develop knowledge for the preparation and design of magnetic-semiconductor hybrid super-structures composed of semiconductors inaterials (silicon, III-V,and II-VI compounds) and various magnetic materials, and to pursue new physical effects based on the interactions between carrier spins and magnetic ions. Results obtained under this project are summarized as follows :1) Have characterized a series of (In, Mn) As-based diluted magnetic semiconductor heterostructures, and found a strong dependencies of carrier (hole) concentrations and heterostructure parameters on magnetic properties.2) Have found light-induced ferromagnetism in (In, Mn) As/GaSb heterostructures. Have concluded that the phenomenon is based on excess carriers generated by the light irradiation.3) Have initiated the fabrication of field-effect devices with the (In, Mn) As-based heterostructures.4) Have re-analyzed EXAFS data, and determined the local Mn structures (MnAs_4) in homogeneous (In, Mn) As.5) Have studied magneto-Kerr effect in (In, Mn) As/ (Al, Ga) Sb heterostructures, and elucidate the relation between band structures and optical response.6) Have investigated electrical behavior of (In, Mn) As : MnAs thin films, and found that the ferromagnetic MnAs clusters can strongly modify carrier transport in the (In, Mn) As layrs.7) Have prepared and characterized ZnSe/Fe multi-layred structures, a new wide-gap based hybrid super structures, and found new features in magneto-optical spectra which are not due to constituent materials.8) Have considered concepts of novel magneto-optical and information storage devices.
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H.Munekata: "III-V Based Diluted Magnetic Semiconductors : Carrier-Induced Magnetism" Advanced Materials. vol.7. 82-85 (1995)
H.Munekata:“III-V 基稀磁半导体:载流子感应磁性”先进材料。
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Y.L.Soo: "III-V Diluted Magnetic Semiconductor : Substitutional Doping of Mn in InAs" Phys.Rev.B 53. 4905-4909 (1996)
Y.L.Soo:“III-V 稀磁半导体:InAs 中锰的替代掺杂”Phys.Rev.B 53. 4905-4909 (1996)
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K.Watanabe, M.Hosoya, K.Hara, J.Yoshino, H.Munekata and H.Kukimoto: "Inducement of GaAs growth by electron beam irradiation on GaAs covered by native oxide" J.Cryst.Growth. vol.150. 612-615 (1995)
K.Watanabe、M.Hosoya、K.Hara、J.Yoshino、H.Munekata 和 H.Kukimoto:“通过电子束照射被自然氧化物覆盖的 GaAs 来诱导 GaAs 生长”J.Cryst.Growth。
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P.Fumagalli: "Magneto-optic Properties and Ferromagnetism of (In,Mn)As/(In,Al)As/(Ga,Al)Sb Heterostructures" Phys.Rev.B53. 15045-15053 (1996)
P.Fumagalli:“(In,Mn)As/(In,Al)As/(Ga,Al)Sb 异质结构的磁光性质和铁磁性”Phys.Rev.B53。
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通讯作者:
Y.L.Soo, W.Huang, Z.H.Ming, Y.H.Kao, H.Munekata, and L.L.Chang: "III-V Diluted Magnetic Semiconductor : Substitutional Doping of Mn in InAs" Phys.Rev.B. vol.53. 4905-4909 (1996)
Y.L.Soo、W.Huang、Z.H.Ming、Y.H.Kao、H.Munekata 和 L.L.Chang:“III-V 稀磁半导体:InAs 中 Mn 的替代掺杂”Phys.Rev.B。
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共 22 条
Semiconductor Nanospintronics
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批准号:14076103
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$23.1万
-
财政年份:2002
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负责人:MUNEKATA Hiroo
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依托单位:
Manipulation of ferromagnetically coupled spin system with light and its applications
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批准号:14076210
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$54.72万
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财政年份:2002
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负责人:MUNEKATA Hiroo
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依托单位:
Photo-enhanced magnetization in semiconductors thin films incorporating magnetic dots
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批准号:12450007
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.22万
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财政年份:2000
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负责人:MUNEKATA Hiroo
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依托单位:
Development of galvanomagnetic and magneto-optical devices with III-V-based diluted magnetic semiconductors
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批准号:07555004
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$9.54万
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财政年份:1995
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负责人:MUNEKATA Hiroo
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依托单位:
海外基金