Preparation of magnetic-semiconductor hybrid super-structures and exploration of novel physical effects

磁半导体混合超结构的制备及新型物理效应的探索

• 批准号: 07455006
• 负责人: MUNEKATA Hiroo
• 金额: $ 4.93万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455006/
• 关键词: diluted magnetic semiconductors; magnetic semiconductors; spin exchange interaction; superstructures; molecular beam epitaxy

The research has been carried out with the aim to develop knowledge for the preparation and design of magnetic-semiconductor hybrid super-structures composed of semiconductors inaterials (silicon, III-V,and II-VI compounds) and various magnetic materials, and to pursue new physical effects based on the interactions between carrier spins and magnetic ions. Results obtained under this project are summarized as follows :1) Have characterized a series of (In, Mn) As-based diluted magnetic semiconductor heterostructures, and found a strong dependencies of carrier (hole) concentrations and heterostructure parameters on magnetic properties.2) Have found light-induced ferromagnetism in (In, Mn) As/GaSb heterostructures. Have concluded that the phenomenon is based on excess carriers generated by the light irradiation.3) Have initiated the fabrication of field-effect devices with the (In, Mn) As-based heterostructures.4) Have re-analyzed EXAFS data, and determined the local Mn structures (MnAs_4) in homogeneous (In, Mn) As.5) Have studied magneto-Kerr effect in (In, Mn) As/ (Al, Ga) Sb heterostructures, and elucidate the relation between band structures and optical response.6) Have investigated electrical behavior of (In, Mn) As : MnAs thin films, and found that the ferromagnetic MnAs clusters can strongly modify carrier transport in the (In, Mn) As layrs.7) Have prepared and characterized ZnSe/Fe multi-layred structures, a new wide-gap based hybrid super structures, and found new features in magneto-optical spectra which are not due to constituent materials.8) Have considered concepts of novel magneto-optical and information storage devices.

该研究的目的是开发由半导体材料（硅，III-V和II-VI化合物）和各种磁性材料组成的磁性半导体混合超级结构的制备和设计知识，并根据载流子自旋和磁性离子之间的相互作用寻求新的物理效应。本项目取得的主要成果如下：1）表征了一系列（In，Mn）As基稀磁半导体异质结构，发现了载流子（空穴）浓度和异质结构参数对磁性的强烈依赖性; 2）发现了（In，Mn）As/GaSb异质结构中的光致铁磁性。研究了（In，Mn）As/（Al，Ga）Sb异质结中的磁克尔效应，并对（In，Mn）As/（Al，Ga）Sb异质结中的磁克尔效应进行了研究。研究了（In，Mn）As：MnAs薄膜，发现铁磁MnAs团簇对（In，Mn）As层中的载流子输运有很强的调节作用。7）制备并表征了ZnSe/Fe多层结构，一种新的宽禁带混合超结构，并在磁光光谱中发现了与组成材料无关的新特征。8）考虑了新型磁光和信息存储器件的概念。

项目成果

H.Munekata: "III-V Based Diluted Magnetic Semiconductors : Carrier-Induced Magnetism" Advanced Materials. vol.7. 82-85 (1995)

H.Munekata：“III-V 基稀磁半导体：载流子感应磁性”先进材料。

Y.L.Soo: "III-V Diluted Magnetic Semiconductor : Substitutional Doping of Mn in InAs" Phys.Rev.B 53. 4905-4909 (1996)

Y.L.Soo：“III-V 稀磁半导体：InAs 中锰的替代掺杂”Phys.Rev.B 53. 4905-4909 (1996)

K.Watanabe, M.Hosoya, K.Hara, J.Yoshino, H.Munekata and H.Kukimoto: "Inducement of GaAs growth by electron beam irradiation on GaAs covered by native oxide" J.Cryst.Growth. vol.150. 612-615 (1995)

K.Watanabe、M.Hosoya、K.Hara、J.Yoshino、H.Munekata 和 H.Kukimoto：“通过电子束照射被自然氧化物覆盖的 GaAs 来诱导 GaAs 生长”J.Cryst.Growth。

P.Fumagalli: "Magneto-optic Properties and Ferromagnetism of (In,Mn)As/(In,Al)As/(Ga,Al)Sb Heterostructures" Phys.Rev.B53. 15045-15053 (1996)

P.Fumagalli：“(In,Mn)As/(In,Al)As/(Ga,Al)Sb 异质结构的磁光性质和铁磁性”Phys.Rev.B53。

Y.L.Soo, W.Huang, Z.H.Ming, Y.H.Kao, H.Munekata, and L.L.Chang: "III-V Diluted Magnetic Semiconductor : Substitutional Doping of Mn in InAs" Phys.Rev.B. vol.53. 4905-4909 (1996)

Y.L.Soo、W.Huang、Z.H.Ming、Y.H.Kao、H.Munekata 和 L.L.Chang：“III-V 稀磁半导体：InAs 中 Mn 的替代掺杂”Phys.Rev.B。