In situ transmission electron microscopy of degradation phenomena of Pb(Zrx Ti_<l-x>)O_3 thin films
In situ transmission electron microscopy of degradation phenomena of Pb(Zrx Ti_<l-x>)O_3 thin films
批准号:
12450010
负责人:
SAKAI Akira
金额:
$8.26万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2002
中文摘要
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英文摘要
In situ and real-time observation using transmission electron microscopy (TEM) is one of the most promising-techniques which reveal dynamic behavior of structural modification of materials. In this work, we focus on the fatigue phenomenon, i.e., degradation of remnant polarization, of Pb(Zr_xTi_<1-x>)O_3 thin films which are widely used for ferroelectric devices and aim at the development of a TEM observation technique by which structural changes of the films under electric field stresses can be revealed on an atomic scale. We have newly developed a TEM sample holder which can controllably bias the samples during observation. Sample preparation processes have been also developed, in which photo lithography and focused ion beam methods were employed. Furthermore, we have carried out TEM observation and measurement of ferroelectric properties for the processed samples having PZT capacitor structures and confirmed that damaged layers formed locally on the sample surface critically influence the degradation of remnant polarization of PZT. This work allows us to obtain not only static information but also dynamic information on the fatigue phenomena of the ferroelectric films under electric field stresses.
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H.Fujita, M.Imade, M.Sakashita, A.Sakai, S.Zaima, Y.Yasuda: "Orientation dependence of ferroelectric properties of Pb(Zrx Ti_<1-x>)O_3 thin films on Pt/SiO_2/Si substrates"Applied Surface Science. Vol.159-160. 134-137 (2000)
H.Fujita、M.Imade、M.Sakashita、A.Sakai、S.Zaima、Y.Yasuda:“Pt/SiO_2/Si 上 Pb(Zrx Ti_<1-x>)O_3 薄膜铁电性能的取向依赖性
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通讯作者:
H.Fujita: "Control of crystal structure and ferroelectric properties of Pb(Zr_xTi_<1-x>)O_3 films formed by pulsed laser deposition"Jpn. J. Appl. Phys.. 39. 7035-7039 (2000)
H.Fujita:“通过脉冲激光沉积形成的Pb(Zr_xTi_<1-x>)O_3薄膜的晶体结构和铁电性能的控制”Jpn。
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H.Fujita, S.Goto, M.Sakashita, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda: "Control of crystal structure and ferroelectric properties of Pb(Zrx Ti_<1-x>)O_3 films formed by pulsed laser deposition"Jpn.J.Appl.Phys.. Vol.39. 7035-7039 (2000)
H.Fujita, S.Goto, M.Sakashita, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda:“控制形成的 Pb(Zrx Ti_<1-x>)O_3 薄膜的晶体结构和铁电性能
DOI:
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发表时间:
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影响因子:
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作者:
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通讯作者:
H.Fujita: "Orientation dependence of ferroelectric properties of Pb(Zr_xTi_<1-x>)O_3 thin films on Pt/SiO_2/Si substrates"Applied Surface Science. 159-160. 134-137 (2000)
H.Fujita:“Pt/SiO_2/Si 基底上 Pb(Zr_xTi_<1-x>)O_3 薄膜铁电性能的取向依赖性”应用表面科学。
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作者:
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通讯作者:
H.Fujita: "Orientation dependence of ferroelectric properties of Pb(Zr_xTi_<1-x>)O_3 thin films on Pt/SiO_2/Si substrates"Appl.Surf.Sci.. 159-160. 134-137 (2000)
H.Fujita:“Pt/SiO_2/Si 衬底上 Pb(Zr_xTi_<1-x>)O_3 薄膜铁电性能的取向依赖性”Appl.Surf.Sci.. 159-160。
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