fs pulse generation with MIXSEL (mode-locked integrated external cavity surface emitting laser) based on quantum dot amplifying and absorbing elements (QD-MIXSEL)

基于量子点放大和吸收元件 (QD-MIXSEL) 的 MIXSEL（锁模集成外腔表面发射激光器）产生飞秒脉冲

• 批准号: 286077633
• 负责人: Professor Dr. Johann Peter Reithmaier
• 金额: --
• 依托单位: Institut für Quantenelektronik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2016
• 资助国家: 德国
• 起止时间: 2015-12-31 至 2019-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/286077633?language=en
• 关键词: fs; pulse; generation; MIXSEL; mode

The group aims to realize first compact semiconductor based high-power fs laser sources for frequency comb generation, which will be well beyond the current state-of-the art and which are suitable for coherent communication systems. The joint project combines the expertise of three leading groups, i.e. (i) the group of Ursula Keller (ETH Zürich) who is a leader in the development of ultra-short pulsed high power vertical external cavity surface emitting lasers (VECSELs) development (Keller's group), (ii) the group of Johann Peter Reithmaier (INA, University of Kassel) who is a leader in GaAs based high-power quantum dot (QD) laser material, and (iii) the group of Gadi Eisenstein (Technion, Israel) who is expert and leader in dynamic characterization of QD lasers and device simulation. To achieve this goal, a quantum dot mode locked integrated external cavity surface emitting laser (QD-MIXSEL) will be realized consisting of a QD-VECSEL structure with a QD gain region monolithically integrated with a QD semiconductor saturable absorbing mirror (QD-SESAM). The major objectives are to- develop an optimized QD gain section in VECSELs and MIXSELs for high-power sub-picosecond pulse generation around 950 nm center wavelength- develop optimized QD saturable absorber parameters with low saturation fluence and fast recovery time taking into account annealing during the full MIXSEL growth- demonstrate high average power (> 1 W) femtosecond (< 500 fs) pulse duration from a SESAM modelocked VECSEL using the optimized QD parameters for gain and absorber- demonstrate high average power (> 1 W) femtosecond (< 500 fs) pulse duration from a MIXSEL using the optimized QD parameters for gain and integrated absorber- demonstrate stable frequency comb generation using the SESAM modelocked VECSEL or directly the MIXSELAll of the aimed parameters are well beyond state-of the art and would mark a breakthrough in the understanding of optimizing QD-MIXSELs as well as for using comb generating MIXSELs for coherent communication systems, which was up to now not possible due to the limited output power and/or limited bandwidth caused by the minimal pulse length of existing devices.

该小组的目标是实现第一个紧凑的基于半导体的高功率fs激光源，用于频率梳产生，这将远远超出当前的最先进的技术水平，适用于相干通信系统。该联合项目结合了三个领导小组的专门知识，即（一）乌苏拉·凯勒小组，（ETH Zürich）是超短脉冲高功率垂直外腔面发射激光器（VECSELs）开发领域的领导者（凯勒的小组），（ii）约翰彼得Reithmaier小组（INA，卡塞尔大学），其是基于GaAs的高功率量子点（QD）激光材料的领导者，以及（iii）Gadi Eisenstein（以色列理工学院）的小组，其是QD激光器和器件模拟的动态表征的专家和领导者。为了实现这一目标，量子点锁模集成外腔面发射激光器（QD-MIXSEL）将实现由量子点增益区与量子点半导体可饱和吸收镜（QD-SESAM）单片集成的QD-VECSEL结构组成。主要目标是-在VECSEL和MIXSEL中开发优化的QD增益部分，用于在950 nm中心波长附近产生高功率亚皮秒脉冲-开发优化的QD可饱和吸收体参数，具有低饱和通量和快速恢复时间，考虑到在整个MIXSEL生长期间的退火-展示高平均功率（> 1 W）飞秒（< 500 fs）的脉冲持续时间-展示了高平均功率（> 1 W）飞秒（< 500 fs）脉冲持续时间，使用增益和集成吸收体的优化QD参数，使用SESAM锁模VECSEL或直接MIXSEL证明稳定的频率梳产生所有目标参数都远远超出了现有技术，并将标志着对优化QD的理解的突破。MIXSEL以及使用梳状产生MIXSEL用于相干通信系统，由于现有设备的最小脉冲长度导致的有限输出功率和/或有限带宽，这到目前为止是不可能的。

项目成果

Mode-locking Instabilities for High-Gain Semiconductor Disk Lasers Based on Active Submonolayer Quantum Dots

基于有源亚单层量子点的高增益半导体盘激光器的锁模不稳定性

• DOI: 10.1103/physrevapplied.10.044015
• 发表时间: 2018
• 期刊: Physical Review Applied
• 影响因子: 4.6
• 作者: C. G. E. Alfieri;D. Waldburger;J. Nürnberg;M. Golling;L. Jaurigue;K. Lüdge;U. Keller
• 通讯作者: U. Keller

High-Power Sub-300-Femtosecond Quantum Dot Semiconductor Disk Lasers

高功率低于 300 飞秒量子点半导体盘激光器

• DOI: 10.1109/lpt.2018.2801024
• 发表时间: 2018
• 期刊: IEEE Photonics Technology Letters
• 影响因子: 2.6
• 作者: C. G. E. Alfieri;D. Waldburger;M. Golling;U. Keller
• 通讯作者: U. Keller

Optical efficiency and gain dynamics of modelocked semiconductor disk lasers.

锁模半导体盘激光器的光学效率和增益动态

• DOI: 10.1364/oe.25.006402
• 发表时间: 2017
• 期刊: Optics express
• 影响因子: 3.8
• 作者: C. G. E. Alfieri;D. Waldburger;S. M. Link;E. Gini;M. Golling;G. Eisenstein;U. Keller
• 通讯作者: U. Keller

Optimization of size uniformity and dot density of InxGa1−xAs/GaAs quantum dots for laser applications in 1 µm wavelength range

优化 InxGa1âxAs/GaAs 量子点的尺寸均匀性和点密度，用于 1 µm 波长范围内的激光应用

• DOI: 10.1016/j.jcrysgro.2019.04.002
• 发表时间: 2019
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: T. Finke;V. Sichkovskyi;J. P. Reithmaier
• 通讯作者: J. P. Reithmaier

Tightly locked optical frequency comb from a semiconductor disk laser.

半导体盘激光器紧密锁定的光学频率梳

• DOI: 10.1364/oe.27.001786
• 发表时间: 2019
• 期刊: Optics express
• 影响因子: 3.8
• 作者: D. Waldburger;A. S. Mayer;C. G. E. Alfieri;A. R. Johnson;A. Klenner;Y. Okawachi;M. Lipson;A. L. Gaeta;U. Keller
• 通讯作者: U. Keller