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fs pulse generation with MIXSEL (mode-locked integrated external cavity surface emitting laser) based on quantum dot amplifying and absorbing elements (QD-MIXSEL)

fs pulse generation with MIXSEL (mode-locked integrated external cavity surface emitting laser) based on quantum dot amplifying and absorbing elements (QD-MIXSEL)
基于量子点放大和吸收元件 (QD-MIXSEL) 的 MIXSEL(锁模集成外腔表面发射激光器)产生飞秒脉冲
批准号:
286077633
负责人:
Professor Dr. Johann Peter Reithmaier
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2016
资助国家:
德国
项目状态:
已结题
起止时间:
2015-12-31 至 2019-12-31

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中文摘要
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英文摘要
The group aims to realize first compact semiconductor based high-power fs laser sources for frequency comb generation, which will be well beyond the current state-of-the art and which are suitable for coherent communication systems. The joint project combines the expertise of three leading groups, i.e. (i) the group of Ursula Keller (ETH Zürich) who is a leader in the development of ultra-short pulsed high power vertical external cavity surface emitting lasers (VECSELs) development (Keller's group), (ii) the group of Johann Peter Reithmaier (INA, University of Kassel) who is a leader in GaAs based high-power quantum dot (QD) laser material, and (iii) the group of Gadi Eisenstein (Technion, Israel) who is expert and leader in dynamic characterization of QD lasers and device simulation. To achieve this goal, a quantum dot mode locked integrated external cavity surface emitting laser (QD-MIXSEL) will be realized consisting of a QD-VECSEL structure with a QD gain region monolithically integrated with a QD semiconductor saturable absorbing mirror (QD-SESAM). The major objectives are to- develop an optimized QD gain section in VECSELs and MIXSELs for high-power sub-picosecond pulse generation around 950 nm center wavelength- develop optimized QD saturable absorber parameters with low saturation fluence and fast recovery time taking into account annealing during the full MIXSEL growth- demonstrate high average power (> 1 W) femtosecond (< 500 fs) pulse duration from a SESAM modelocked VECSEL using the optimized QD parameters for gain and absorber- demonstrate high average power (> 1 W) femtosecond (< 500 fs) pulse duration from a MIXSEL using the optimized QD parameters for gain and integrated absorber- demonstrate stable frequency comb generation using the SESAM modelocked VECSEL or directly the MIXSELAll of the aimed parameters are well beyond state-of the art and would mark a breakthrough in the understanding of optimizing QD-MIXSELs as well as for using comb generating MIXSELs for coherent communication systems, which was up to now not possible due to the limited output power and/or limited bandwidth caused by the minimal pulse length of existing devices.
期刊论文(7)
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会议论文
Mode-locking Instabilities for High-Gain Semiconductor Disk Lasers Based on Active Submonolayer Quantum Dots
基于有源亚单层量子点的高增益半导体盘激光器的锁模不稳定性
DOI: 10.1103/physrevapplied.10.044015
发表时间: 2018
期刊: Physical Review Applied
影响因子: 4.6
作者: [C. G. E. Alfieri, D. Waldburger, J. Nürnberg, M. Golling, L. Jaurigue, K. Lüdge, U. Keller]
通讯作者: U. Keller
High-Power Sub-300-Femtosecond Quantum Dot Semiconductor Disk Lasers
高功率低于 300 飞秒量子点半导体盘激光器
DOI: 10.1109/lpt.2018.2801024
发表时间: 2018
期刊: IEEE Photonics Technology Letters
影响因子: 2.6
作者: [C. G. E. Alfieri, D. Waldburger, M. Golling, U. Keller]
通讯作者: U. Keller
Optical efficiency and gain dynamics of modelocked semiconductor disk lasers.
锁模半导体盘激光器的光学效率和增益动态
DOI: 10.1364/oe.25.006402
发表时间: 2017
期刊: Optics express
影响因子: 3.8
作者: [C. G. E. Alfieri, D. Waldburger, S. M. Link, E. Gini, M. Golling, G. Eisenstein, U. Keller]
通讯作者: U. Keller
Optimization of size uniformity and dot density of InxGa1−xAs/GaAs quantum dots for laser applications in 1 µm wavelength range
优化 InxGa1âxAs/GaAs 量子点的尺寸均匀性和点密度,用于 1 µm 波长范围内的激光应用
DOI: 10.1016/j.jcrysgro.2019.04.002
发表时间: 2019
期刊: Journal of Crystal Growth
影响因子: 1.8
作者: [T. Finke, V. Sichkovskyi, J. P. Reithmaier]
通讯作者: J. P. Reithmaier
Investigation of fundamental physical properties of coupled quantum well - quantum dot systems emitting in the near infrared range of 1.3 - 1.55 micrometer (Acronym: QuCoS = Quantum Coupled Systems).
  • 批准号:
    262304022
  • 项目类别:
    Research Grants
  • 资助金额:
    $0.0万
  • 财政年份:
    2014
  • 负责人:
    Professor Dr. Johann Peter Reithmaier
  • 依托单位:
Entwicklung von kompakten monolithisch integrierbaren optischen Netzwerken auf der Basis von tiefgeätzten Halbleiterstegstrukturen
Fabrication and characterization of quasi two-dimensional photonic crystal structures with tunable optical properties
  • 批准号:
    5318774
  • 项目类别:
    Priority Programmes
  • 资助金额:
    $0.0万
  • 财政年份:
    2001
  • 负责人:
    Professor Dr. Johann Peter Reithmaier
  • 依托单位:
Herstellung und Charakterisierung von stark gekrümmten Wellenleitern auf der Basis von zweidimensional angeordneten periodischen Strukturen
  • 批准号:
    5098456
  • 项目类别:
    Priority Programmes
  • 资助金额:
    $0.0万
  • 财政年份:
    1998
  • 负责人:
    Professor Dr. Johann Peter Reithmaier
  • 依托单位:
海外基金