Functional Thin Film Formation with High Efficiency Microwave Plasma CVD
Functional Thin Film Formation with High Efficiency Microwave Plasma CVD
批准号:
12558047
负责人:
FUJITA Junji
金额:
$8.64万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2001
中文摘要
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英文摘要
1) The purpose of this research is to develop a device for functional thin film formation such as penetration resistive film onto the inner surface of PET bottle, on the basis of research and development on microwave discharge at our laboratory.2) A high density plasma has been produced with surface wave propagation utilizing electric field enhancement with a ridge inside the waveguide.3) With this device, Ar plasma with CH_4 is used for carbon coating of PET bottle set at the end of the discharge tube.4) A new device has been designed and constructed, which can produce a flat plasma suited for studying the characteristics of the film in order to obtain the optimum plasma conditions for thin film formation. The microwave power is fed to the plasma through a slot antenna at the bottom of a cavity resonator and along the surface of a quartz plate. This technique is proved to produce stable plasma in a wide range of discharge conditions.5) Another technique has been developed to form a metal film which is difficult to produce with plasma chemical vapor deposition method, based on electromagnetic acceleration of metal plasma produced with vaporization of thin wire with a high electric current.6) A laser scattering method is established to study the behavior of nano-particles in a plasma, by the use of argon ion laser, related with thin film formation from nano-particles, and with detection of nano-particles in a plasma. The relative sensitivity factors and the sputtering yield data have been obtained which are important to analyze the chemical processes in the plasma.7) The completion of this thin film formation device and the establishment of related diagnostic technique allow us to obtain desirable conditions for various kinds of functional thin film formation with plasma CVD.
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T.Saka, M.Inoue: "Correlation Between the Relative Sensitivity Factors and the Sputtering Yields in Glow Discharge Mass Spectrometry"Analytical Science. 16. 653-655 (2000)
T.Saka、M.Inoue:“辉光放电质谱中相对灵敏度因素与溅射产率之间的相关性”分析科学。
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K.Tanaka: "Crystal Structure and Particle Size of Ge-Nanoparticles Depending on the Flowing Gas Evaporation Conditions"Transactions of the Materials Research Society of Japan. (to be printed). (2002)
K.Tanaka:“Ge-纳米粒子的晶体结构和粒径取决于流动气体蒸发条件”日本材料研究学会会刊。
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T.Saka, M.Yamaguchi, K.Ito: "Concentration dependence of the relative sensitivity factors of aluminum in glow discharge mass spectroscopy"J.Trace and Microprobe Techniques. 19. 533-540 (2001)
T.Saka、M.Yamaguchi、K.Ito:“辉光放电质谱中铝的相对灵敏度因子的浓度依赖性”J.Trace and Microprobe Techniques。
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坂 貴: "グロー放電質量分析法による元素分析"電気製鋼. 72・4. 215-222 (2001)
Takashi Saka:“辉光放电质谱法的元素分析”电工钢铁制造72・4。
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T.Saka and M.Inoue: "Correlation between the Relative Sensitivity Factors and the Sputtering Yields in Glow-Discharge Mass Spectrometry"Analytical Science. 16・6. 653-655 (2000)
T.Saka 和 M.Inoue:“辉光放电质谱法中的相对灵敏度因素与溅射产率的相关性”分析科学 16・6(2000)。
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共 19 条
Development of Magnetic Field Distribution Measurement in a Plasma by Means of Beam Probe/Laser Spectroscopy
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批准号:04452314
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项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$4.1万
-
财政年份:1992
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负责人:FUJITA Junji
-
依托单位:
COMPREHENSIVE STUDY OF TOROIDAL FUSION SYSTEM
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批准号:03045051
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$3.46万
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财政年份:1991
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负责人:FUJITA Junji
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依托单位:
Negative Ion Source for the Measurement of Plasma Potential by a Heavy Ion Probe
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批准号:01460249
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$2.69万
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财政年份:1989
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负责人:FUJITA Junji
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依托单位:
Edge Plasma Diagnostics on Tore Supra Tokamak
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批准号:63044061
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$8.83万
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财政年份:1988
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负责人:FUJITA Junji
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依托单位:
海外基金