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Development of Fabrication Technology of Ferrite Thin Materials for Microwave Magnetic Devices

Development of Fabrication Technology of Ferrite Thin Materials for Microwave Magnetic Devices
微波磁器件用铁氧体薄材料制备技术的进展
批准号:
13450145
负责人:
YAMAMOTO Setsuo
金额:
$9.34万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2003

项目摘要

项目成果

YAMAMOTO Setsuo的其他基金

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中文摘要
翻译
使用块状铁氧体材料会干扰磁性设备和移动通信设备的实现。本研究的目的是开发低温铁氧体薄膜的制备技术,并探讨其在小型、低高度磁性器件中的应用可行性。研究结果如下:1。利用电子回旋共振微波等离子体反应溅射技术,以44 nm/min的高沉积速率成功制备了矫顽力低至11 Oe、高取向的Ni-Zn铁氧体薄膜。采用锥形溅射靶代替血小板靶是实现这一目标的有效方法。研制了以镍锌铁氧体薄膜为材料的极小尺寸电感器。在1 GHz范围内,电感比无磁芯电感增大25%,q值比无磁芯电感增大15%。该电感器的面积为6×10^4μm^2 (250μm×240μm),约为其他研究人员已经开发的最小电感器的50%。从而证明了铁氧体薄膜作为磁芯的有效性。利用高频有限元仿真器设计了一种结构新颖的铁氧体薄膜微带Y结型隔离器。该隔离器的高度小于1mm。Y型结圆形部分的下接地面靠近微带线,以增强微波传输的循环。采用微加工技术对隔振器进行了试制。隔离器具有非互反传输特性
英文摘要
Use of bulk ferrite materials disturbs achievement of magnetic devices and mobile communication sets. The purpose of this research is to develop fabrication technology of ferrite thin-films at low temperature and to investigate the feasibility of application to small and low height magnetic devices. The following research results were obtained1. Using reactive sputtering utilizing electron-cyclotron-resonance microwave plasma, Ni-Zn ferrite thin-films with a coercivity as low as 11 Oe and high crystal orientation was successfully prepared at high deposition rate of 44 nm/min. Use of conic sputtering target instead of platelet target was effective to achieve this2. Extremely small size inductor using Ni-Zn ferrite thin-film was developed. 25 % increase in inductance and 15 % increase in Q-value as compared with inductor without magnetic core was obtained up to 1 GHz. The area of the inductor was 6×10^4μm^2 (250μm×240μm) which was about 50 % of the smallest inductor already developed by another researchers. Thus the effectiveness of use of ferrite thin-film as a magnetic core was proved3. Microstrip Y junction type isolator using ferrite thin-film with a novel structure was designed using high frequency FEM simulator. The height of this isolator was less than 1 mm. Ground plane underneath of the circle portion of the Y junction was located closed to the microstrip line to enhance circulation of microwave transmission. The isolator was fabricated in trial using micromachining technology. The isolator showed non-reciprocal transmission characteristics
期刊论文(230)
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会议论文
山本節夫: "平坦化したフェライト基板に作製した薄膜インダクタ"粉体および粉末冶金. Vol.48, No.2. 150-154 (2001)
Setsuo Yamamoto:“在扁平铁氧体基板上制造的薄膜电感器”《粉末与粉末冶金》第 48 卷,第 150-154 期(2001 年)。
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山本節夫: "反応性ECRスパッタ法で作製したCo含有酸化鉄薄膜のプラズマ酸化処理効果"日本応用磁気学会誌. Vol.26,No.4. 263-268 (2002)
Setsuo Yamamoto:“等离子体氧化处理对反应性 ECR 溅射制备的含钴氧化铁薄膜的影响”,日本应用磁学学会杂志,第 26 卷,第 263-268 期(2002 年)。
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Setsuo Yamamoto: "High-rate-deposition of Ni-Zn ferrite thin-films using ECR sputtering with conic target"Physica Status Solidi. (in press). (2004)
Setsuo Yamamoto:“使用 ECR 溅射和圆锥靶材高速沉积 Ni-Zn 铁氧体薄膜”Physica Status Solidi。
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S.Yamamoto: "Thin-Film Inductor Mlcro-Formed on Smoothed Ferrite Substrate"Journal of the Japan Society of Powder and Powder Metallurgy. Vol.48, No.2. 150-154 (2001)
S.Yamamoto:“在平滑铁氧体基板上微成型的薄膜电感器”日本粉末和粉末冶金学会杂志。
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107
    DEVELOPMENT OF SMALL AND WIDEBAND UHF ANTENNA USING HIGH PERFORMANCE FERRITE
    • 批准号:
      16K06299
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.91万
    • 财政年份:
      2016
    • 负责人:
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    • 依托单位:
    Development of very small isolators for multiband operation
    • 批准号:
      25420333
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.33万
    • 财政年份:
      2013
    • 负责人:
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    • 依托单位:
    Study on small isolator for 4th generation wireless communication system
    • 批准号:
      21560355
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.0万
    • 财政年份:
      2009
    • 负责人:
      YAMAMOTO Setsuo
    • 依托单位:
    Study on low temperature and high deposition rate preparation method of Cobalt containing ferrite thin-film media using ECR sputtering
    • 批准号:
      11650349
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $1.98万
    • 财政年份:
      1999
    • 负责人:
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    • 依托单位:
    海外基金