Development of Fabrication Technology of Ferrite Thin Materials for Microwave Magnetic Devices

微波磁器件用铁氧体薄材料制备技术的进展

基本信息

  • 批准号:
    13450145
  • 负责人:
  • 金额:
    $ 9.34万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2001
  • 资助国家:
    日本
  • 起止时间:
    2001 至 2003
  • 项目状态:
    已结题

项目摘要

Use of bulk ferrite materials disturbs achievement of magnetic devices and mobile communication sets. The purpose of this research is to develop fabrication technology of ferrite thin-films at low temperature and to investigate the feasibility of application to small and low height magnetic devices. The following research results were obtained1. Using reactive sputtering utilizing electron-cyclotron-resonance microwave plasma, Ni-Zn ferrite thin-films with a coercivity as low as 11 Oe and high crystal orientation was successfully prepared at high deposition rate of 44 nm/min. Use of conic sputtering target instead of platelet target was effective to achieve this2. Extremely small size inductor using Ni-Zn ferrite thin-film was developed. 25 % increase in inductance and 15 % increase in Q-value as compared with inductor without magnetic core was obtained up to 1 GHz. The area of the inductor was 6×10^4μm^2 (250μm×240μm) which was about 50 % of the smallest inductor already developed by another researchers. Thus the effectiveness of use of ferrite thin-film as a magnetic core was proved3. Microstrip Y junction type isolator using ferrite thin-film with a novel structure was designed using high frequency FEM simulator. The height of this isolator was less than 1 mm. Ground plane underneath of the circle portion of the Y junction was located closed to the microstrip line to enhance circulation of microwave transmission. The isolator was fabricated in trial using micromachining technology. The isolator showed non-reciprocal transmission characteristics
块状铁氧体材料的使用妨碍了磁性器件和移动的通信装置的实现。本研究旨在发展低温下铁氧体薄膜的制造技术,并探讨其应用于小型低高度磁性元件的可行性。取得了以下研究成果1。采用电子回旋共振微波等离子体反应溅射技术,以44 nm/min的高沉积速率成功制备了具有低至11 Oe的结晶度和高取向度的Ni-Zn铁氧体薄膜。研制了镍锌铁氧体薄膜超小型电感器。与无磁芯电感器相比,在1GHz以下获得电感增加25%和Q值增加15%。电感器的面积为6×10^4μm^2(250μm×240μm),约为其他研究人员已经开发的最小电感器的50%。因此,证明了使用铁氧体薄膜作为磁芯的有效性。利用高频有限元仿真器设计了一种新型结构的铁氧体薄膜微带Y结型隔离器。该隔离器的高度小于1 mm,接地面位于Y结圆形部分下方靠近微带线的位置,以增强微波传输的循环性。该隔离器是使用微机械加工技术进行试验制造的。该隔离器具有非互易传输特性

项目成果

期刊论文数量(230)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
山本節夫: "平坦化したフェライト基板に作製した薄膜インダクタ"粉体および粉末冶金. Vol.48, No.2. 150-154 (2001)
Setsuo Yamamoto:“在扁平铁氧体基板上制造的薄膜电感器”《粉末与粉末冶金》第 48 卷,第 150-154 期(2001 年)。
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    0
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山本節夫: "反応性ECRスパッタ法で作製したCo含有酸化鉄薄膜のプラズマ酸化処理効果"日本応用磁気学会誌. Vol.26,No.4. 263-268 (2002)
Setsuo Yamamoto:“等离子体氧化处理对反应性 ECR 溅射制备的含钴氧化铁薄膜的影响”,日本应用磁学学会杂志,第 26 卷,第 263-268 期(2002 年)。
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    0
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Setsuo Yamamoto: "High-rate-deposition of Ni-Zn ferrite thin-films using ECR sputtering with conic target"Physica Status Solidi. (in press). (2004)
Setsuo Yamamoto:“使用 ECR 溅射和圆锥靶材高速沉积 Ni-Zn 铁氧体薄膜”Physica Status Solidi。
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    0
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S.Yamamoto: "Thin-Film Inductor Mlcro-Formed on Smoothed Ferrite Substrate"Journal of the Japan Society of Powder and Powder Metallurgy. Vol.48, No.2. 150-154 (2001)
S.Yamamoto:“在平滑铁氧体基板上微成型的薄膜电感器”日本粉末和粉末冶金学会杂志。
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    0
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S.Yamamoto: "Co-Containing Spine) Ferrite Thin-Film Perpendicular Magnetic Recording Media With Mn-Zn Ferrite Backlayer"IEICE TRANSACTIONS on Electronics. Vol.E86-C, No.9. 1835-1840 (2003)
S.Yamamoto:“含钴脊柱)铁氧体薄膜垂直磁记录介质与锰锌铁氧体背层”IEICE 电子交易。
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YAMAMOTO Setsuo其他文献

YAMAMOTO Setsuo的其他文献

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{{ truncateString('YAMAMOTO Setsuo', 18)}}的其他基金

DEVELOPMENT OF SMALL AND WIDEBAND UHF ANTENNA USING HIGH PERFORMANCE FERRITE
使用高性能铁氧体开发小型宽带 UHF 天线
  • 批准号:
    16K06299
  • 财政年份:
    2016
  • 资助金额:
    $ 9.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of very small isolators for multiband operation
开发用于多频段操作的小型隔离器
  • 批准号:
    25420333
  • 财政年份:
    2013
  • 资助金额:
    $ 9.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Study on small isolator for 4th generation wireless communication system
第四代无线通信系统小型隔离器的研究
  • 批准号:
    21560355
  • 财政年份:
    2009
  • 资助金额:
    $ 9.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Study on low temperature and high deposition rate preparation method of Cobalt containing ferrite thin-film media using ECR sputtering
ECR溅射低温高沉积速率制备含钴铁氧体薄膜介质方法研究
  • 批准号:
    11650349
  • 财政年份:
    1999
  • 资助金额:
    $ 9.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Study on Preparation Method of Ultra-High-Density Magnetic Recording Media by Sputtering Using Electron Cyclotron Resonance Microwave Plasma
电子回旋共振微波等离子体溅射制备超高密度磁记录介质方法的研究
  • 批准号:
    07650398
  • 财政年份:
    1995
  • 资助金额:
    $ 9.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

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微波毫米波自适应器件铁电薄膜移相器的研制
  • 批准号:
    17K14677
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    2017
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SBIR Phase II: Microwave Surface-Wave Plasma Source for Large-Area, High-Throughput, High-Quality Thin-Film Manufacturing for Solar Panels and Semiconductors
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  • 批准号:
    1127557
  • 财政年份:
    2011
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    Standard Grant
SBIR Phase I: Microwave Surface-Wave Plasma Source for Large-Area, High-Throughput, High-Quality Thin-Film Manufacturing for Solar Panels and Semiconductors
SBIR 第一阶段:微波表面波等离子体源,用于太阳能电池板和半导体的大面积、高通量、高质量薄膜制造
  • 批准号:
    1014309
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    2010
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Novel Tunable Microwave Magnetoelectric Composite Materials and Devices with Metallic Magnetic Thin Film Materials
新型可调谐微波磁电复合材料及金属磁性薄膜器件
  • 批准号:
    0824008
  • 财政年份:
    2008
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Fabrication and evaluation of integrated magnetic thin film devices for microwave applications
用于微波应用的集成磁性薄膜器件的制造和评估
  • 批准号:
    20560321
  • 财政年份:
    2008
  • 资助金额:
    $ 9.34万
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Microwave bandpass filters using zinc oxide thin film bulk acoustic resonators
使用氧化锌薄膜体声谐振器的微波带通滤波器
  • 批准号:
    314655-2005
  • 财政年份:
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  • 项目类别:
    Special Research Opportunity Program - Inter-American Collaboration in Materials Research
Microwave bandpass filters using zinc oxide thin film bulk acoustic resonators
使用氧化锌薄膜体声谐振器的微波带通滤波器
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    314655-2005
  • 财政年份:
    2005
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    $ 9.34万
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    Special Research Opportunity Program - Inter-American Collaboration in Materials Research
Double Layered Thin Film Fabrication of a/c-controlled YBCO and Manganites, and Tunable Microwave Filters
交流控制 YBCO 和锰氧化物的双层薄膜制造以及可调谐微波滤波器
  • 批准号:
    15560006
  • 财政年份:
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Functional Thin Film Formation with High Efficiency Microwave Plasma CVD
采用高效微波等离子体 CVD 形成功能性薄膜
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    12558047
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STTR 第一阶段:新型薄膜电场可调谐微波器件
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  • 财政年份:
    2000
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