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Study on low temperature and high deposition rate preparation method of Cobalt containing ferrite thin-film media using ECR sputtering

ECR溅射低温高沉积速率制备含钴铁氧体薄膜介质方法研究

基本信息

批准号：
11650349
负责人：
YAMAMOTO Setsuo
金额：
$ 1.98万
依托单位：
Yamaguchi University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

项目摘要

In a conventional fabrication method of cobalt containing γ-Fe_2O_3 thin-film magnetic recording media, processing temperature higher than 250 degrees centigrade and two step fabrication process, that is sputter-deposition of CoO-Fe_3O_4 thin-films and transformation to Cobalt containing γ-Fe_2O_3 thin-films by annealing in air were necessary. In this study, novel sputtering using reactive and dense microwave plasma generated by electron-cyclotron-resonance (ECR phenomena) was introduced to achieve low-temperature and one step fabrication of these media. It was proved that the cobalt containing spinel ferrite thin-film media with a coercivity higher than 3000 Oe, well crystal orientation and very smooth surface (Ra is 0.2 to 0.4 nm) can be fabricated by using reactive ECR sputtering method at a low processing temperature (room temperature to 150 degrees centigrade) without any post oxidation processes.Recording and reproducing operation using inductive/MR merged flying head showed the cobalt containing ferrite thin-film media fabricated by the reactive ECR sputtering are utilizable without deposition of protective overlayer and surface polishing. Also, cobalt containing ferrite thin-films with high coercivity of about 2000 Oe were successfully deposited on organic flexible substrate such as PET and polyimide films by using ECR sputtering method. This experiment showed that application of the ferrite thin-films to the tape media was feasible. An ECR sputtering apparatus with high deposition rate was designed and developed.To summarize, the research goal of this study which was to develop low temperature and high rate fabrication method of ferrite thin-film media was satisfactorily achieved.

在传统的制备含钴γ-Fe_2O_3薄膜磁记录介质的方法中，处理温度高于250 ℃，需要两步制备工艺，即先沉积CoO-Fe_3 O_4薄膜，再在空气中退火转变为含钴γ-Fe_2O_3薄膜。在这项研究中，新的溅射使用反应和密集的微波等离子体产生的电子回旋共振（ECR现象），以实现低温和一步制造这些介质。实验证明，该含钴尖晶石铁氧体薄膜介质的矫顽力大于3000 Oe，良好的晶体取向和非常光滑的表面（Ra为0.2至0.4 nm）可以通过使用反应ECR溅射方法在低处理温度下制造（室温至150摄氏度），无需任何后氧化工艺。使用感应/MR融合飞头显示，由反应ECR溅射制备的含钴铁氧体薄膜介质是可利用的，而无需沉积保护覆盖层和表面抛光。此外，含钴铁氧体薄膜具有约2000 Oe的高介电常数，成功地沉积在有机柔性基板，如PET和聚酰亚胺薄膜，通过使用ECR溅射方法。实验表明，铁氧体薄膜应用于磁带介质是可行的。设计并研制了一台高沉积速率的ECR溅射装置，成功地实现了本课题的研究目标，即低温高速率制备铁氧体薄膜介质。