Fabrication and Characterization of GaN HEMTs with short gate length

短栅极长度 GaN HEMT 的制造和表征

• 批准号: 13450141
• 负责人: MIZUTANI Takashi
• 金额: $ 2.5万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450141/
• 关键词: GaN HEMT; Si_3N_4; current collapse; temperature distribution; miro-Raman; gate leakage current; GaN MISHEMT; T-shaped gate; 電流しゃ断周波数; 実効電子速度; 低周波雑音; EL発光; 電界集中; 高温動作

Fabrication process of GaN HEMTs was studied to improve the device performance, and the fabricated device was characterized in detail. The main results are as follows. (i) Surfacepassivation of GaN HEMTs with Si_3N_4 film was effective in suppressing the current collapse that limit the output power. (ii) Temperature distribution in GaN HEMTs on a sapphire substrate was successfully measured by micro-Raman scattering spectroscopy. Temperature resolution better than 10K was obtained. The highest temperature was obtained at the edge on the drain side where high-field region was formed. (iii) A large gate leakage current was observed in the GaN HEMTs, which was suppressed by employing MISHEMT structure, where Si_3N_4 was used as a gate insulator. (iv) Measurement of I-V characteristics of micro-Schottky contacts revealed that the threading dislocation did not affect the gate leakage current. (v) Current gain cutoff frequency of 54GHz was obtained in the GaN HEMT with 0.2-μm-long T-shaped gate.

为了提高GaN HEMTs的性能，研究了GaN HEMTs的制备工艺，并对所制备的器件进行了详细的表征。主要研究结果如下。(1)Si_3N_4膜表面钝化GaN HEMT能有效地抑制限制输出功率的电流崩塌。(Ii)用显微拉曼散射光谱成功地测量了蓝宝石衬底上GaN HEMT的温度分布。获得了优于10K的温度分辨率。最高温度出现在漏极一侧形成高场区的边缘。(3)用Si_3N_4作栅绝缘体的GaN HEMT中观察到了较大的栅漏电流，而MISHEMT结构抑制了这种漏电流。(4)微肖特基接触的I-V特性测量表明，穿线位错对栅漏电流没有影响。(V)采用0.2μm长T形栅的gan HEMT获得了54 GHz的电流增益截止频率。

项目成果

M.Aki, T.Mizutani et al.: "Temperature Dependence of AlGaN/GaN HEMTs Performances"Phys. Stat. Sol(a). 188. 207-211 (2001)

M.Aki、T.Mizutani 等人：“AlGaN/GaN HEMT 性能的温度依赖性”Phys。

T.Nakano, T.Mizutani, et al.: "Electroluminescence in Al GaN/GaN High Electron Mobility Transistros"Jpn.J.Appl.Phys.. 41. 1990-1991 (2002)

T.Nakano、T.Mizutani 等：“Al GaN/GaN 高电子迁移率晶体管中的电致发光”Jpn.J.Appl.Phys.. 41. 1990-1991 (2002)

Y.Ohno, T.Mizutani, et al.: "Temperature Distribution Measurement in Al GaN/GaN High Electron Mobility Transistors by Micro-Raman Scattering spectroscopy"Jpn.J.Appl.Phys.. 41. L452-L454 (2002)

Y.Ohno、T.Mizutani 等：“通过微拉曼散射光谱测量 Al GaN/GaN 高电子迁移率晶体管的温度分布”Jpn.J.Appl.Phys.. 41. L452-L454 (2002)

Y.Ohno, T.Mizutani et al.: "Temperature Distributions in Al GaN/GaN HEMTS Measured by Micro-Raman Scattering Spectroscopy"Phys.Stat.Sol. (c). 0・1. 57-60 (2002)

Y.Ohno、T.Mizutani 等人：“通过微拉曼散射光谱测量的 Al GaN/GaN HEMT 中的温度分布”Phys.Stat.Sol (c) 57-60。

T.Mizutani, H.Makihara et al.: "Measurement of Frequency Dispersion of Al GaN/GaN High Electron Mobility Transistors"Jpn.J.Appl.Phys.. 42. 424-425 (2003)

T.Mizutani、H.Makihara 等人：“Al GaN/GaN 高电子迁移率晶体管的频率分散的测量”Jpn.J.Appl.Phys.. 42. 424-425 (2003)