Fabrication of normally-off GaN MISFETs for high-power application

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Novel p-InGaN/AlGaN/GaN MISFET was proposed and normally-off operation of the MISFETs with a threshold voltage of 1. 2 V was realized. Concerning the gate insulator, ALD-grown Al_2O-3 was shown to be better than HfO-2 from the view point of transient behavior of the devices.(NH-4)-2S treatment before the gate insulator deposition and gate first process where gate insulator was deposited before ohmic contact formation was effective in decreasing the interface state density.