Fabrication and Characterization of High-Breakdown and High-Power GaN HEMTs
高击穿和高功率 GaN HEMT 的制造和表征
基本信息
- 批准号:15206040
- 负责人:
- 金额:$ 32.53万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:2003
- 资助国家:日本
- 起止时间:2003 至 2005
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We have studied the fabrication and characterization of GaN HEMT to realize the high-breakdown and high-power GaN HEMTs. The main results we have obtained are as follows.1. It has been clarified that the off-state breakdown voltage is dominated by the electrons injected from the gate electrode.2. The gate leakage current which affects the breakdown voltage could be decreased in the GaN MISHEMTs with Si_3N_4 gate insulator.3. The off-state breakdown voltage of the GaN MISHEMTs has been increased from 70-80 V of the conventional GaN HEMTs to 160-200 V.4. The current collapse which is one of the dominant factors to decrease the output power of the conventional GaN HEMTs was suppressed in the MISHEMTs.5. It has been demonstrated that the drain current DLTS is effective in studying the transient behavior of the GaN HEMTs. It has also been clarified, using this technique, that the positive peak originating the surface states has been suppressed in the MISHEMTs.6. The issue of small transconductance of the Si_3N_4 MISHEMTs has been solved by using HfO_2 with high dielectric constant as a gate insulator.7. The inclined gate recess structure has been proposed to improve the high-speed performance of the HEMTs. It has been shown that the proposed structure is effective in improving the device performance based on the device simulation and on the device fabrication.
为了实现高击穿、大功率GaN HEMT器件,我们对GaN HEMT器件的制备和特性进行了研究。主要结果如下:1.已经阐明,关态击穿电压由从栅电极注入的电子主导。采用Si_3N_4栅绝缘层可以降低影响击穿电压的栅漏电流. GaN MISHEMTs的关态击穿电压已从传统GaN HEMTs的70-80 V提高到160-200 V。4.电流崩塌是传统GaN HEMT输出功率下降的主要因素之一,MISHEMT的电流崩塌得到了抑制.结果表明,漏极电流DLTS是研究GaN HEMT瞬态特性的有效方法。它也已被澄清,使用这种技术,起源于表面态的正峰已被抑制在MISHEMT中。采用高介电常数的HfO_2作为栅绝缘层,解决了Si_3N_4 MISHEMT的栅电阻小的问题.斜栅凹槽结构被提出来改善HEMT的高速性能。它已被证明,所提出的结构是有效的,在提高器件性能的基础上的器件模拟和器件制造。
项目成果
期刊论文数量(82)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Electron Traps in AlGaN/GaN MIS-HEMTs Observed by Drain Current DLTS
通过漏极电流 DLTS 观察到 AlGaN/GaN MIS-HEMT 中的电子陷阱
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:T.Okino;Y.Ohno;S.Kishimoto;K.Maezawa;J.Osaka;T.Mizutani
- 通讯作者:T.Mizutani
T, Mizutani, H.Makihara, M.Akita, Y.Ohno, S.Kishimoto, K.Maezawa: "Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistars"Jpn.J.Appl.Phys.. vol.42. 424-425 (2003)
T、水谷、H.Makihara、M.Akita、Y.Ohno、S.Kishimoto、K.Maezawa:“AlGaN/GaN 高电子迁移率晶体管的频率色散测量”Jpn.J.Appl.Phys.. vol.42
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Study on off‐state breakdown in AlGaN/GaN HEMTs
- DOI:10.1002/pssc.200303405
- 发表时间:2003-10
- 期刊:
- 影响因子:0
- 作者:T. Nakao;Y. Ohno;S. Kishimoto;K. Maezawa;T. Mizutani
- 通讯作者:T. Nakao;Y. Ohno;S. Kishimoto;K. Maezawa;T. Mizutani
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
MIZUTANI Takashi其他文献
MIZUTANI Takashi的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('MIZUTANI Takashi', 18)}}的其他基金
Fabrication of normally-off GaN MISFETs for high-power application
用于高功率应用的常断 GaN MISFET 的制造
- 批准号:
21360168 - 财政年份:2009
- 资助金额:
$ 32.53万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Fabrication and characterization of normally-off GaN HEMTs
常断 GaN HEMT 的制造和表征
- 批准号:
18206041 - 财政年份:2006
- 资助金额:
$ 32.53万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Fabrication and Characterization of GaN HEMTs with short gate length
短栅极长度 GaN HEMT 的制造和表征
- 批准号:
13450141 - 财政年份:2001
- 资助金额:
$ 32.53万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Potential Profile Measurement of Semiconductor Devices Using Kelvin Probe Force Microscopy
使用开尔文探针力显微镜测量半导体器件的电势分布
- 批准号:
10450135 - 财政年份:1998
- 资助金额:
$ 32.53万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study on differentiation therapy of prostatic cancer
前列腺癌的分化治疗研究
- 批准号:
09671606 - 财政年份:1997
- 资助金额:
$ 32.53万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
相似海外基金
Experimental and theoretical investigation of geometric and compositional factors in improving the off-state breakdown voltage, reliability, and enhancement-mode operation among GaN channel hetero-structure field effect transistors
几何和成分因素在提高 GaN 沟道异质结构场效应晶体管断态击穿电压、可靠性和增强模式操作方面的实验和理论研究
- 批准号:
RGPIN-2020-05656 - 财政年份:2022
- 资助金额:
$ 32.53万 - 项目类别:
Discovery Grants Program - Individual
Realization of high-efficiency GaN rectifier diode with 0V on-voltage and high breakdown voltage for energy harvesting
实现0V导通电压和高击穿电压的高效GaN整流二极管用于能量收集
- 批准号:
22K04227 - 财政年份:2022
- 资助金额:
$ 32.53万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Experimental and theoretical investigation of geometric and compositional factors in improving the off-state breakdown voltage, reliability, and enhancement-mode operation among GaN channel hetero-structure field effect transistors
几何和成分因素在提高 GaN 沟道异质结构场效应晶体管断态击穿电压、可靠性和增强模式操作方面的实验和理论研究
- 批准号:
RGPIN-2020-05656 - 财政年份:2021
- 资助金额:
$ 32.53万 - 项目类别:
Discovery Grants Program - Individual
Experimental and theoretical investigation of geometric and compositional factors in improving the off-state breakdown voltage, reliability, and enhancement-mode operation among GaN channel hetero-structure field effect transistors
几何和成分因素在提高 GaN 沟道异质结构场效应晶体管断态击穿电压、可靠性和增强模式操作方面的实验和理论研究
- 批准号:
RGPIN-2020-05656 - 财政年份:2020
- 资助金额:
$ 32.53万 - 项目类别:
Discovery Grants Program - Individual
Advanced back end processing for high breakdown voltage and low thermal resistance GaN power transistor
用于高击穿电压和低热阻 GaN 功率晶体管的先进后端处理
- 批准号:
497994-2016 - 财政年份:2020
- 资助金额:
$ 32.53万 - 项目类别:
Collaborative Research and Development Grants
Advanced back end processing for high breakdown voltage and low thermal resistance GaN power transistor
用于高击穿电压和低热阻 GaN 功率晶体管的先进后端处理
- 批准号:
497994-2016 - 财政年份:2019
- 资助金额:
$ 32.53万 - 项目类别:
Collaborative Research and Development Grants
Advanced back end processing for high breakdown voltage and low thermal resistance GaN power transistor
用于高击穿电压和低热阻 GaN 功率晶体管的先进后端处理
- 批准号:
497994-2016 - 财政年份:2018
- 资助金额:
$ 32.53万 - 项目类别:
Collaborative Research and Development Grants
Advanced back end processing for high breakdown voltage and low thermal resistance GaN power transistor
用于高击穿电压和低热阻 GaN 功率晶体管的先进后端处理
- 批准号:
497994-2016 - 财政年份:2017
- 资助金额:
$ 32.53万 - 项目类别:
Collaborative Research and Development Grants
Reduction in current collapse and enhancement of breakdown voltage in GaN-based HEMTs
减少 GaN 基 HEMT 中的电流崩塌并提高击穿电压
- 批准号:
16K06314 - 财政年份:2016
- 资助金额:
$ 32.53万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Study on III-Nitride Based MIS-Transistors with Low-loss and High-breakdown voltage Characteristics
低损耗高击穿电压III族氮化物MIS晶体管的研究
- 批准号:
25420328 - 财政年份:2013
- 资助金额:
$ 32.53万 - 项目类别:
Grant-in-Aid for Scientific Research (C)