Potential Profile Measurement of Semiconductor Devices Using Kelvin Probe Force Microscopy

使用开尔文探针力显微镜测量半导体器件的电势分布

• 批准号: 10450135
• 负责人: MIZUTANI Takashi
• 金额: $ 10.43万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10450135/
• 关键词: Kelvin Probe Force Microscopy; KFM; Potential Profile; InGaAs HEMT; GaAs MESFET; InAs Dot; AFM酸化; 単電子トンネル; サファイア基板

The purpose of this research project is to develop the technique to measure the potential profile of the device with high spatial resolution using Kelvin probe force microscopy. Main results are as follows.1. The InGaAs HEMTs show similar potential profile to that of GaAs HEMTs having high-field region at the drain-side edge of the gate. The high-field region of the HEMTs is more pronounced than of GaAs MESFETs. This is ascribed to the absence of nィイD1+ィエD1 region in the MESFETs.2. The similar results was obtained by the two-dimensional device simulation of the HEMTs.3. It has been shown that it is important to use the cantilever with large spring constant in the measurement at high vacuum because the Q-value of the cantilever is high.4. Clear potential image of the InAs quantum dots grown on the GaAs substrate was obtained, where the potential of the dots was higher than those of other area.

本研究的目的是发展利用开尔文探针力显微镜以高空间分辨率测量器件电势分布的技术。主要研究结果如下：1. InGaAs HEMT显示出与在栅极的漏极侧边缘处具有高场区的GaAs HEMT类似的电势分布。HEMT的高场区比GaAs MESFFET的高场区更明显。这归因于MESFET中不存在n个N + N + D1区域。通过对HEMT的二维器件模拟，也得到了类似的结果.结果表明，由于悬臂梁的Q值较高，在高真空测量中使用大弹簧常数的悬臂梁是很重要的.获得了GaAs衬底上生长的InAs量子点的清晰电势图像，其中量子点的电势高于其他区域。

项目成果

H.Niwa: "Electroluminescence Measurement of n^+ Self-Aligned GaAs MESFETs" Jpn.J.Appl.Phys.37・3B. 1343-1347 (1998)

H.Niwa：“n^+自对准GaAs MESFET的电致发光测量”Jpn.J.Appl.Phys.37・3B 1343-1347 (1998)

H. Niwa, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, H. Yamazaki and T. Taniguchi: "Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of nィイD1+ィエD1 Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transis

H. Niwa、Y. Ohno、S. Kishimoto、K. Maezawa、T. Mizutani、H. Yamazaki 和 T. Taniguchi：“D1+D1 自对准栅极 GaAs 金属栅极宽度方向电致发光强度分布的测量” -半导体场效应晶体管

H. Niwa: "Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs"Jpn. J. Appl. Phys.. 38・3A. 1363-1364 (1999)

H.丹羽：“n^+自对准栅极GaAs栅极宽度方向的电致发光强度分布的测量”Jpn. Phys. 38・3A (1999)

T. Mizutani: "Measurement of contact Potential GaAs/AlGaAs Heterostructure Using Kelvin Probe Force Microscopy"Jpn. J. Appl. Phys.. 38・7A. L767-L769 (1999)

T. Mizutani：“使用开尔文探针力显微镜测量接触电势 GaAs/AlGaAs 异质结构”Jpn. J. Phys. 38・7A (1999)

T. Mizutani, T. Usunami, S. Kishimoto, and K. Maezawa: "Measurement of Contact Potential of GaAs pn Junctions by Kelvin Probe Force Microscopy"Jpn. J. Appl. Phys.. vol. 38, No. 8. 4893-4894 (1999)

T. Mizutani、T. Usunami、S. Kishimoto 和 K. Maezawa：“通过开尔文探针力显微镜测量 GaAs pn 结的接触电位”Jpn。