Potential Profile Measurement of Semiconductor Devices Using Kelvin Probe Force Microscopy

点击翻译按钮获取中文摘要

The purpose of this research project is to develop the technique to measure the potential profile of the device with high spatial resolution using Kelvin probe force microscopy. Main results are as follows.1. The InGaAs HEMTs show similar potential profile to that of GaAs HEMTs having high-field region at the drain-side edge of the gate. The high-field region of the HEMTs is more pronounced than of GaAs MESFETs. This is ascribed to the absence of nィイD1+ィエD1 region in the MESFETs.2. The similar results was obtained by the two-dimensional device simulation of the HEMTs.3. It has been shown that it is important to use the cantilever with large spring constant in the measurement at high vacuum because the Q-value of the cantilever is high.4. Clear potential image of the InAs quantum dots grown on the GaAs substrate was obtained, where the potential of the dots was higher than those of other area.