An over-100dB wide dynamic range solid-state image sensor with high sensitivity and high S/N ratio.

超过100dB的宽动态范围固态图像传感器,具有高灵敏度和高信噪比。

基本信息

  • 批准号:
    16360165
  • 负责人:
  • 金额:
    $ 9.66万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2004
  • 资助国家:
    日本
  • 起止时间:
    2004 至 2005
  • 项目状态:
    已结题

项目摘要

The purpose of this research is to propose the solid state image sensor with high sensitivity and high S/N performance that equals the solid state image sensor of a current best performance and exceed five digits (100dB) dynamic range and to build the base of the achievement technology.In the first year, it has succeeded in the design, making a chip and camera operation of the wide dynamic range CMOS image sensor that have the lateral overflow capacitor being adjacent to the pinned-photodiode of each pixel and storage exceeded saturation carriers in the same exposure time, and the characteristic of the dynamic range of 100dB was achieved. In the next year, the CMOS image sensor quantitatively examines the tolerance to the leakage current, dark current and noise at a high luminance light irradiation. The photoelectron that overflowed from the photodiode was able to accumulate in the lateral overflow capacitor effectively and the leakage to the adjacent pixels corresponds to a ratio of the 10^<-3> or less, and the tolerance to the noise of the signal that accumulated in the lateral overflow capacitor had 100 times or more the tolerance for the noise signal of the photodiode. Moreover, the change of the design of the lateral overflow capacitor in the pixel and the operation timing have been done to achieve the color image sensor, and the improvement of linearity of photoelectric conversion characteristic and sensitivity. The color CMOS image sensor having effective number of pixels 640x480, pixel size 7.5um was fabricated, and the high-resolution color taking picture performance that had the characteristic of the dynamic range of 102dB was achieved. By researching this CMOS image sensor, the base of the wide dynamic range and high quality imaging technology with good time and spatial sampling was able to be built.
本研究的目的是提出一种相当于目前性能最好的超过五位数(100dB)动态范围的固态图像传感器的高灵敏度、高S/N性能的固态图像传感器,并为该技术的实现奠定基础。第一年,成功设计了横向溢出电容与每个像素的钉扎光电二极管相邻的宽动态范围的cmos图像传感器,并在同一曝光时间内存储超过饱和载流子,达到了100db的动态范围特性。在接下来的一年里,CMOS图像传感器将定量地检测在高亮度光照射下对泄漏电流、暗电流和噪声的容忍度。从光电二极管溢出的光电子能够有效地积累在横向溢出电容器中,对相邻像素的泄漏对应于10^-3或更小的比率,并且积累在横向溢出电容器中的信号对噪声的容忍度是对光电二极管噪声信号的容忍度的100倍或更多。此外,改变了像素中横向溢出电容的设计和操作时序,实现了彩色图像传感器,提高了光电转换特性的线性度和灵敏度。制作了有效像素数为640×480、像素尺寸为7.5微米的彩色CMOS图像传感器,获得了动态范围为102dB的高分辨率彩色摄像性能。通过对该芯片的研究,为实现具有良好的时间和空间采样的宽动态范围、高质量的成像技术奠定了基础。

项目成果

期刊论文数量(26)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
S Sensitivity and Linearity Improvement of a 100 dB Dynamic Range CMOS Image Sensor Using a Lateral Overflow Integration Capacitor
使用横向溢出集成电容器提高 100 dB 动态范围 CMOS 图像传感器的灵敏度和线性度
  • DOI:
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Nana Akahane;須川成利;須川成利;Nana Akahane;Nana Akahane;Shigetoshi Sugawa;Shigetoshi Sugawa;Nana Akahane;Shigetoshi Sugawa;須川成利;Satoru Adachi;Nana Akahane;盛一也;赤羽奈々;Shigetoshi Sugawa;Kazuya Mori;Nana Akahane;S.Adachi;N.Akahane
  • 通讯作者:
    N.Akahane
横型オーバーフロー蓄積容量を用いた広ダイナミックレンジCMOSイメージセンサの高感度化とリニアリティ特性改善
使用水平溢出存储电容器提高宽动态范围 CMOS 图像传感器的灵敏度和线性特性
  • DOI:
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Nana Akahane;須川成利;須川成利;Nana Akahane;Nana Akahane;Shigetoshi Sugawa;Shigetoshi Sugawa;Nana Akahane;Shigetoshi Sugawa;須川成利;Satoru Adachi;Nana Akahane;盛一也;赤羽奈々
  • 通讯作者:
    赤羽奈々
光センサ、固体撮像装置、および固体撮像装置の動作方法
光学传感器、固态成像装置以及操作固态成像装置的方法
  • DOI:
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
An Over 200 dB Dynamic Range Image Capture using a CMOS Image Sensor with Lateral Overflow Integration Capacitor and Current Readout Circuit in a Pixel
使用具有横向溢出集成电容器和像素中电流读出电路的 CMOS 图像传感器进行超过 200 dB 的动态范围图像捕获
Recent Trend on Wide Dynamic Range Image Sensors
宽动态范围图像传感器的最新趋势
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SUGAWA Shigetoshi其他文献

SUGAWA Shigetoshi的其他文献

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{{ truncateString('SUGAWA Shigetoshi', 18)}}的其他基金

Accurate measurement and statistical analysis of gate leakage current of MOSFETs with atomically flat interface
原子级平坦界面MOSFET栅极漏电流的精确测量和统计分析
  • 批准号:
    24360129
  • 财政年份:
    2012
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A high performance CMOS image sensor with high sensitivity and wide dynamic range
高性能 CMOS 图像传感器,具有高灵敏度和宽动态范围
  • 批准号:
    19360151
  • 财政年份:
    2007
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Photo-resist. Stripping. Technology. by. Gas-liquid. mixture. for. Highly-efficient. Ultra-short-time. Semiconductor. Manufacturing
光刻胶。
  • 批准号:
    13555084
  • 财政年份:
    2001
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Highly Sesitive and High-resolution Amplification Solid-State Imagine System with Instant Imaging Parareli Processor
具有即时成像 Parareli 处理器的高灵敏度和高分辨率放大固态成像系统
  • 批准号:
    13305024
  • 财政年份:
    2001
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)

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    533391421
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购置多模式、高分辨率、高灵敏度成像平台
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    10629563
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