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Highly Sesitive and High-resolution Amplification Solid-State Imagine System with Instant Imaging Parareli Processor

Highly Sesitive and High-resolution Amplification Solid-State Imagine System with Instant Imaging Parareli Processor
具有即时成像 Parareli 处理器的高灵敏度和高分辨率放大固态成像系统
批准号:
13305024
负责人:
SUGAWA Shigetoshi
金额:
$32.7万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2002

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中文摘要
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英文摘要
This research aims at realizing of personal mobile system which can instantly import and modify information in worldwide through global network, then make a transmission or a record, and quickly find and utilize a required datum in enormous amount of information. In order to realize such system, instant transmission of the high-definition picture information, record, and search are essential technologies. Therefore, we developed the algorithm which raises the rate of picture compression after separating object completely at the time of imaging, and built the foundation of realization of the intelligent man-machine-interface system equipped with recognition and judgment processing.First, in order to form amorphous photoelectric film used as photoelectric conversion layer without structural failure, we created the gas flow control system featuring the gas pressure control method, which can instantly control composition of gas-mixture in film formation chamber, and microwave excited high- … More density plasma equipment having dual shower-plate featuring low electron temperature, in which the novel exhaust pumps featuring non-equivalent pitch and non-equivalent angle of lead screw are implemented. By using this equipment, we established the foundation to form the highly reliable photoelectric film, which is formed by high-quality CVD, and highly selective RIE for miniaturized contact/ via-hole. Both of processes are realized by the selection of plasma-excitation gases and process-gases, respectively, which can realize suppression of both excess-decomposition of process gases and ion-bombardment-damages.Moreover, in order to realize the highly sensitive and highly efficient image sensor which carries out noise control while imaging picture at the video rate and extracts the attributes and the amount of features which each imaged object has characteristic, such as a position of the depth direction, motion, color balance, and roughness (spatial frequency), on real time, and carries out category separation, we examined the device, circuit, and processing algorithm in detail, and completed the chip design.Furthermore, we devised the technique of choosing the optimal image compression algorithm for every divided object category and established the foundation of the new vector quantization technique which maintains high image quality and realizes the overwhelming high compression rate. Less
期刊论文(20)
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会议论文
S.Sugawa, I.Ohshima, H.Ishino, Y.Saito, M.Hirayama, T.Ohmi: "Advantage of Silicon Nitride Gate Insulator Transistor by using Microwave-Excited High-Density Plasma for applying 100nm Technology Node"2001 International Electron Device Meeting, TECHNICAL DIG
S.Sukawa、I.Ohshima、H.Ishino、Y.Saito、M.Hirayama、T.Ohmi:“采用微波激励高密度等离子体的氮化硅栅极绝缘晶体管在100nm技术节点应用中的优势”2001年国际电子
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通讯作者:
Tetsuya Goto: "A New Microwave-Excited Plasma Etching Equipment for Separated Plasma Excited Region from Etching Process Region"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials. 444-445 (2002)
Tetsuya Goto:“用于将等离子体激发区域与蚀刻处理区域分离的新型微波激发等离子体蚀刻设备”2002 年国际固态器件和材料会议的扩展摘要。
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H. TanaKa, Z. Chuanjie, M. Hirayama, A. Teramoto, S. Sugawa, T. Ohmi: "High Quality Silicon Oxide Film Formed by Diffusion Region PECVD and Oxgen Radical Treatment using Microwave-Excited High-Density"Extended Abstracts of the 2002 International Conferenc
H. TanaKa、Z. Chuanjie、M. Hirayama、A. Teramoto、S. Sukawa、T. Ohmi:“利用微波激发高密度扩散区 PECVD 和氧自由基处理形成高质量氧化硅薄膜”扩展摘要
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20
    Accurate measurement and statistical analysis of gate leakage current of MOSFETs with atomically flat interface
    • 批准号:
      24360129
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $12.15万
    • 财政年份:
      2012
    • 负责人:
      SUGAWA Shigetoshi
    • 依托单位:
    A high performance CMOS image sensor with high sensitivity and wide dynamic range
    • 批准号:
      19360151
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $12.15万
    • 财政年份:
      2007
    • 负责人:
      SUGAWA Shigetoshi
    • 依托单位:
    An over-100dB wide dynamic range solid-state image sensor with high sensitivity and high S/N ratio.
    • 批准号:
      16360165
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $9.66万
    • 财政年份:
      2004
    • 负责人:
      SUGAWA Shigetoshi
    • 依托单位:
    Photo-resist. Stripping. Technology. by. Gas-liquid. mixture. for. Highly-efficient. Ultra-short-time. Semiconductor. Manufacturing
    • 批准号:
      13555084
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $8.19万
    • 财政年份:
      2001
    • 负责人:
      SUGAWA Shigetoshi
    • 依托单位:
    海外基金