Development of insulating system with low dielectric constant, high dielectric strength a-C:F film coated conductor prepared by plasma CVD as alternatives to SF_6

开发等离子体CVD制备的低介电常数、高介电强度a-C:F薄膜涂层导体的绝缘系统作为SF_6的替代品

• 批准号: 13555077
• 负责人: SAKAI Yosuke
• 金额: $ 8.77万
• 依托单位: HOKKAIDO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555077/
• 关键词: electric insulation; amorphous CF film; per-fluorocarbon; Paschen curve; enhancement of dielectric strength; 絶縁体力向上; 非平衡プラズマ; フルオロカーボン; 薄膜推積; 薄膜堆積

In order to reduce the usage of SFs insulation gas, which has high GWP (global warming potential), the present project proposed to use a-C:F film coated conductor prepared by RF plasma CVD method for insulation of electric power systems as alternatives of SF_6. This project was motivated because we had experienced very high deposition rates in RF plasma if per-fluorocarbon vapors were used. The main results are listed as follows.l. The deposition rate on Si and A1 substrates was > 100-200nm/min, which is a few tens times higher than those obtained by conventional CF_4 and C_2F_6 gases.2. The a-C:F film, which is composed of C-C and C-F bonds, was excellent insulation properties (dielectric constant 【approximately equal】 2) with high density and good thermal strength.3. The breakdown voltage V_s of N_2, Ar and He between the a-C:F film coated Al electrodes were 3 times larger than that between Al ones in low p(pressure)d(gap length) region. For pd<20 Torr/cm the V_s was rather higher than that of SFs.4. Reason of the enhancement of V_s was explained by the fact that secondary electron emission rate was reduced significantly by this film coating.5. Effect of decomposed species in the plasma on the a-C:F film properties was tried to examine, but in this project term it was not really cleared.

为了减少具有高GWP（全球变暖潜势）的SFs绝缘气体的使用，本项目提出采用射频等离子体CVD法制备的a-C:F膜涂覆导体作为SF_6的替代品，用于电力系统的绝缘。这个项目的动机是，如果使用全氟碳蒸汽，我们在射频等离子体中经历了非常高的沉积速率。主要结果如下：1。在Si和A1衬底上的沉积速率为100 ~ 200nm/min，比传统的CF_4和C_2F_6气体的沉积速率提高了几十倍。由C-C和C-F键组成的a-C:F薄膜具有优良的绝缘性能（介电常数【近似等于】2）、高密度和良好的热强度。在低p（压力）d（间隙长度）区，a-C:F膜Al电极间的N_2、Ar和He击穿电压V_s比Al电极间的击穿电压V_s大3倍。当pd<20 Torr/cm时，V_s明显高于sfs。V_s增强的原因可以解释为该膜涂层显著降低了二次电子发射速率。等离子体中分解物质对a-C:F膜性能的影响曾试图进行研究，但在本项目期内并没有得到真正的明确。

项目成果

A.Ohta, C.Biloiu, Y.Sakai, M.A.Bratescu, Y.Suda: "Deposition of a-C : F films by C_8F_<18> plasma CVD and their properties"Papers of Technical Committee for Electrical Discharges (IEEJ). ED-03-115. 49-54 (2003)

A.Ohta、C.Biloiu、Y.Sakai、M.A.Bratescu、Y.Suda：“通过 C_8F_<18> 等离子体 CVD 沉积 a-C : F 薄膜及其性能”放电技术委员会 (IEEJ) 的论文。

A.Ohta, S.Tazawa, Y.Sakai, M.A.Bratescu: "Relationship between the C_8F_<18> plasma and a-C:F film properties by PECVD"Proceedings of the 21st Sym.on Plasma Processing. 32-33 (2004)

A.Ohta、S.Tazawa、Y.Sakai、M.A.Bratescu：“PECVD 的 C_8F_<18> 等离子体与 a-C:F 薄膜特性之间的关系”第 21 届 Sym.on 等离子体处理会议论文集。

Y.Sakai, C.Biloiu, I.A.Biloiu, Y.Suda: "Fluorocarbon-film preparation in C_8F_<18> vapor rf plasma and its electrical properties"Int. Conf. on Plasma Sciences, Banff, Canada. 6D08 (2002)

Y.Sakai，C.Biloiu，I.A.Biloiu，Y.Suda：“C_8F_<18>蒸气射频等离子体中氟碳薄膜的制备及其电性能”Int。

鉾井 耕司: "C_7F_<16>を用いたC:F膜の堆積とその評価 -ガス圧依存性および気体混合による効果-"電気学会放電研究会 ED-01-113. 1-6 (2001)

Koji Hokoi：“使用 C_7F_<16> 沉积 C:F 膜及其评估 - 气压依赖性和气体混合的影响 -”IEEJ 放电研究组 ED-01-113 (2001)。

鉾井耕司, 赤澤正道, 菅原広剛, 須田善行, 酒井洋輔: "C_7F_<16>を用いたC:F膜の堆積とその評価-ガス圧依存性および気体混合による効果-"電気学会放電研究会資料. ED-01-113. 1-9 (2001)

Koji Hokoi、Masamichi Akazawa、Hirotake Sugara、Yoshiyuki Suda、Yosuke Sakai：“使用 C_7F_<16> 沉积 C:F 薄膜及其评估 - 气压依赖性和气体混合的影响 -”IEEJ 放电研究会议材料。 -113。1-9（2001）