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COMPACT AND HIGH DIELECTRIC STRENGTH OF ELECTRIC MACHINES WITH a-C:F FILM COATING OF LOW-DIELECTRIC CONSTANT AND HIGH DIELECTRIC STRENGTH DEPOSITED IN PLASMA

COMPACT AND HIGH DIELECTRIC STRENGTH OF ELECTRIC MACHINES WITH a-C:F FILM COATING OF LOW-DIELECTRIC CONSTANT AND HIGH DIELECTRIC STRENGTH DEPOSITED IN PLASMA
等离子体沉积的低介电常数和高介电强度的 a-C:F 薄膜涂层的紧凑和高介电强度电机
批准号:
17360121
负责人:
SAKAI Yosuke
金额:
$9.47万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2007

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中文摘要
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英文摘要
SF_6 gas shows excellent properties as an electric insulating material, however as it's global warming factor is extremely big, the gas is now forbidden to be exhausted outdoors. The present research is, in place of SF_6 gas usage, to propose an alternative technique that conductor parts, which are coated by amorphous carbon-fluoride (a-C:F) film processed in plasma, are introduced in a gas insulation system. Then, the air breakdown voltage between the coated electrodes was shown to be the same level or even higher than that of SF_6 gas between the conventional electrodes.The main results are summarized as follow, 1) a-C:F film with a few hundred nanometers thickness was coated, in a chemically and physically stable condition, on the surface of spherical metal electrodes, 2) the present film was shown to be a tetrafluoroethylene (PTFE) like film with a low dielectric constant and high breakdown strength as a result of the analyses by SEM, XPS, FTIR and others, 3) the gas breakdown voltage in the Paschen curve, in which the breakdown voltage is given as a function of pd (p: gas pressure and d: gap length), in the present electrodes was the same level as the case of SF_6 in the conventional electrode system, 4) the surface condition of a-C:F film depended on the amount of buffer gases (Ar, He) in the RF plasma. In addition, assuming breakdown of a part of the film, re-deposition of a-C:F film was tried on the original surface, then, 4) double layers and triple layers, in the case of second and third times deposition, were clearly obtained. And in the case of the third times deposition, on the surface an interesting regularly patterned figures appeared.
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Correlation between a-C:H film properties and Ar/CH4 dielectric barrier discharge
a-C:H薄膜性能与Ar/CH4介质阻挡放电的相关性
DOI: 10.1016/j.tsf.2005.08.145
发表时间: 2006
期刊: Thin Solid Films
影响因子: 2.1
作者: [M. Bratescu, Y. Yoshizaki, Y. Suda, Y. Sakai, H. Sugawara, O. Takai]
通讯作者: O. Takai
a-C:F films deposition by C_8F_18/Ar plasma CVD and their electrical and chemical properties
C_8F_18/Ar等离子体CVD沉积a-C:F薄膜及其电学和化学性能
DOI: --
发表时间: 2006
期刊: Proc. of 13th Asian Conf. on Electrical Discharge P2-11
影响因子: --
作者: [H. Koike, Y. Sakai, Y. Suda, H. Sugawara and S. Tazawa]
通讯作者: H. Sugawara and S. Tazawa
C_8F_<18>/ArプラズマCVDによるa-C : F膜堆積とその特性
Ar等离子体CVD沉积C_8F_<18>/a-C:F薄膜及其特性
DOI: --
发表时间: 2006
期刊: 平成18年度電気・情報関係学会北海道支部連合大会 06(CD版)
影响因子: --
作者: [小池広恵, 酒井洋輔, 菅原広剛, 須田善行, 田澤将太]
通讯作者: 田澤将太
C_8F_<18>プラズマCVDによるa-C:F膜堆積とその評価(No.1-221)
C_8F_<18>A-C:F等离子CVD成膜及其评价(No.1-221)
DOI: --
发表时间: 2007
期刊:
影响因子: --
作者: [小池広恵, 山内達也, 須由善行, 酒井洋輔, 菅原広剛]
通讯作者: 菅原広剛
60
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    • 批准号:
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    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
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    • 财政年份:
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    • 资助金额:
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