COMPACT AND HIGH DIELECTRIC STRENGTH OF ELECTRIC MACHINES WITH a-C:F FILM COATING OF LOW-DIELECTRIC CONSTANT AND HIGH DIELECTRIC STRENGTH DEPOSITED IN PLASMA

等离子体沉积的低介电常数和高介电强度的 a-C:F 薄膜涂层的紧凑和高介电强度电机

基本信息

  • 批准号:
    17360121
  • 负责人:
  • 金额:
    $ 9.47万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2005
  • 资助国家:
    日本
  • 起止时间:
    2005 至 2007
  • 项目状态:
    已结题

项目摘要

SF_6 gas shows excellent properties as an electric insulating material, however as it's global warming factor is extremely big, the gas is now forbidden to be exhausted outdoors. The present research is, in place of SF_6 gas usage, to propose an alternative technique that conductor parts, which are coated by amorphous carbon-fluoride (a-C:F) film processed in plasma, are introduced in a gas insulation system. Then, the air breakdown voltage between the coated electrodes was shown to be the same level or even higher than that of SF_6 gas between the conventional electrodes.The main results are summarized as follow, 1) a-C:F film with a few hundred nanometers thickness was coated, in a chemically and physically stable condition, on the surface of spherical metal electrodes, 2) the present film was shown to be a tetrafluoroethylene (PTFE) like film with a low dielectric constant and high breakdown strength as a result of the analyses by SEM, XPS, FTIR and others, 3) the gas breakdown voltage in the Paschen curve, in which the breakdown voltage is given as a function of pd (p: gas pressure and d: gap length), in the present electrodes was the same level as the case of SF_6 in the conventional electrode system, 4) the surface condition of a-C:F film depended on the amount of buffer gases (Ar, He) in the RF plasma. In addition, assuming breakdown of a part of the film, re-deposition of a-C:F film was tried on the original surface, then, 4) double layers and triple layers, in the case of second and third times deposition, were clearly obtained. And in the case of the third times deposition, on the surface an interesting regularly patterned figures appeared.
SF_6气体作为一种电绝缘材料具有优良的性能,但由于其全球变暖系数极大,目前已禁止在室外排放。本研究旨在提出一种替代SF_6气体使用的技术,即在气体绝缘系统中引入非晶态碳氟化碳(a-C:F)薄膜涂层的导体部件。主要结果如下:1)在化学和物理稳定的条件下,在球形金属电极表面涂覆了几百纳米厚的a-C:F薄膜;2)通过扫描电子显微镜、X射线光电子能谱、傅立叶变换红外光谱等分析表明,该薄膜是一种具有低介电常数和高击穿强度的类四氟乙烯(PTFE)薄膜;其中击穿电压是Pd(p:气体压力和d:间隙长度)的函数,在目前的电极系统中与传统电极系统中SF_6的情况相同。4)a-C:F膜的表面状态取决于射频等离子体中缓冲气体(Ar,He)的量。此外,假设薄膜的一部分破裂,在原始表面上尝试再沉积a-C:F薄膜,然后在第二次和第三次沉积的情况下,明显地获得了双层和三层膜。在第三次沉积的情况下,表面出现了有趣的有规则图案的图形。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Correlation between a-C:H film properties and Ar/CH4 dielectric barrier discharge
a-C:H薄膜性能与Ar/CH4介质阻挡放电的相关性
  • DOI:
    10.1016/j.tsf.2005.08.145
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    2.1
  • 作者:
    M. Bratescu;Y. Yoshizaki;Y. Suda;Y. Sakai;H. Sugawara;O. Takai
  • 通讯作者:
    O. Takai
a-C:F films deposition by C_8F_18/Ar plasma CVD and their electrical and chemical properties
C_8F_18/Ar等离子体CVD沉积a-C:F薄膜及其电学和化学性能
C_8F_<18>/ArプラズマCVDによるa-C : F膜堆積とその特性
Ar等离子体CVD沉积C_8F_<18>/a-C:F薄膜及其特性
C_8F_<18>プラズマCVDによるa-C:F膜堆積とその評価(No.1-221)
C_8F_<18>A-C:F等离子CVD成膜及其评价(No.1-221)
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    小池広恵;山内達也;須由善行;酒井洋輔;菅原広剛
  • 通讯作者:
    菅原広剛
Electron acceleration suitable for decomposition of CF_4 molecules and CFx radicals
适用于CF_4分子和CFx自由基分解的电子加速
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    D. Arakida;N. Eguti;N. Mori;H. Sugawara;Y. Sakai;Y. Suda
  • 通讯作者:
    Y. Suda
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SAKAI Yosuke其他文献

SAKAI Yosuke的其他文献

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{{ truncateString('SAKAI Yosuke', 18)}}的其他基金

Alternative SF_6 insulation by deposition of amorphous CxFy film on electric machine conductors
通过在电机导体上沉积非晶 CxFy 薄膜来替代 SF_6 绝缘
  • 批准号:
    15360143
  • 财政年份:
    2003
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of insulating system with low dielectric constant, high dielectric strength a-C:F film coated conductor prepared by plasma CVD as alternatives to SF_6
开发等离子体CVD制备的低介电常数、高介电强度a-C:F薄膜涂层导体的绝缘系统作为SF_6的替代品
  • 批准号:
    13555077
  • 财政年份:
    2001
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Basic study on decomposition of air pollutants using synergetic effect between barrier discharge and VUV light
利用屏障放电与VUV光协同作用分解空气污染物的基础研究
  • 批准号:
    09555083
  • 财政年份:
    1997
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Study on Optimization of Barrier Discharge Excimer-Lamp
势垒放电准分子灯的优化研究
  • 批准号:
    07558175
  • 财政年份:
    1995
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Fundamental Studies on LID Concentration and Discharge Decomposition of Nitrogen-Dioxide
二氧化氮LID浓度与排放分解的基础研究
  • 批准号:
    04452159
  • 财政年份:
    1992
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Studies on Production of Supercooling State and Electrical Properties of Water Condenser for Energy Compression
能量压缩水冷凝器过冷状态产生及电性能研究
  • 批准号:
    01550212
  • 财政年份:
    1989
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

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  • 财政年份:
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常压等离子体CVD非晶碳各向异性控制技术开发
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等离子体CVD法制备非晶碳纳米粒子及其在光催化剂和人工视网膜中的应用
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