Alternative SF_6 insulation by deposition of amorphous CxFy film on electric machine conductors
Alternative SF_6 insulation by deposition of amorphous CxFy film on electric machine conductors
批准号:
15360143
负责人:
SAKAI Yosuke
金额:
$8.7万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2004
中文摘要
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英文摘要
In order to reduce the usage of SF_6 insulation gas with a high GWP (global warming potential) value, the present project proposed to use a-C : F film coated conductor prepared by RF C_8F_<18> vapor plasma method for electric power system insulation as alternatives to SF_6 gas. This project was motivated because we had experienced very high deposition rates in RF plasma if per-fluorocarbon vapors were used. The main results are summarized as follows.1.The deposition rate on Si and Al substrates was about 100-200nm/min, which is a few tens times higher than those obtained by conventional CF_4 and C_2F_6 gases.2.The a-C : F film, which is composed of C-C and C-F bonds, was excellent insulation properties (dielectric constant【approximately equal】2) with high density and good thermal strength.3.The breakdown voltages V_s of N_2, Ar and He gases between the a-C : F film coated Al electrodes were 3 times larger than those between Al ones in low p d (pressure x gap length) region. For pd<20 Torr/cm the V_s was rather higher than that of SF_6 gas.4.The decomposed species of C_8F_<18> were observed using Photo Multiple Analyzer and Quadra Pole Mass Analyzer. It was found that C_2, CF, CF_2, CF_3 and CF_5 were produced significantly. These species could contribute the chemical and electrical properties of a-C : F film, e.g.C/F ratios. Then the dielectric constant value may be changed.The present results suggest that coating of the a-C : F film on electric conductor enhances the dielectric strength of a gas insulation system.
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C.Biloiu, I.A.Biloiu, Y.Sakai, Y.Suda, A.Ohta: "Amorphous fluorocarbon polymer (a-C : F) films obtained by plasma enhanced chemical vapor deposition from perfluorooctane (C_8F_<18>) vapor I : deposition, morphology, structural and chemical properties"J.Va
C.Biloiu、I.A.Biloiu、Y.Sakai、Y.Suda、A.Ohta:“通过等离子体增强化学气相沉积从全氟辛烷 (C_8F_<18>) 蒸气中获得的非晶态氟碳聚合物 (a-C : F) 薄膜 I :沉积、形态
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作者:
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通讯作者:
C.Biloiu, I.A.Biloiu, Y.Sakai, Y.Suda, A.Ohta: "Amorphous fluorocarbon polymer films prepared in perfluorooctane (C_8F_<18>) vapor plasma CVD for an application of electrical insulation"Proc.of Int.Sym.on Plasma Chemistry. 500-505 (2003)
C.Biloiu、I.A.Biloiu、Y.Sakai、Y.Suda、A.Ohta:“在全氟辛烷 (C_8F_<18>) 蒸气等离子体 CVD 中制备的非晶碳氟聚合物薄膜用于电绝缘应用”Proc.of Int.Sym。
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DOI:
10.1116/1.1624284
发表时间:
2004
期刊:
Journal of Vacuum Science and Technology
影响因子:
--
作者:
[C. Biloiu;I. Biloiu;Y. Sakai;Y. Suda;A. Ohta]
通讯作者:
C. Biloiu;I. Biloiu;Y. Sakai;Y. Suda;A. Ohta
Deposition of low-k film on electrodes by C_8F_<18> plasma CVD and enhancement of gas breakdown voltage
C_8F_<18>等离子体CVD在电极上沉积低k薄膜并提高气体击穿电压
DOI:
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发表时间:
2004
期刊:
Proc.of 2004 Annual Conference of Fundamentals and Material Society, IEE Japan X-5
影响因子:
--
作者:
[S.Tazawa, Y.Sakai, M.A.Bratescu]
通讯作者:
M.A.Bratescu
A.Ohta, S.Tazawa, Y.Sakai, M.A.Bratescu: "Relationship between the C_8F_<18> plasma and a-C:F film properties by PECVD"第21回プラズマプロセシング研究会論文集. 32-33 (2004)
A.Ohta、S.Tazawa、Y.Sakai、M.A.Bratescu:“PECVD 的 C_8F_<18> 等离子体与 a-C:F 薄膜特性之间的关系”第 21 届等离子体处理研究组论文集 32-33 (2004)。
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共 23 条
COMPACT AND HIGH DIELECTRIC STRENGTH OF ELECTRIC MACHINES WITH a-C:F FILM COATING OF LOW-DIELECTRIC CONSTANT AND HIGH DIELECTRIC STRENGTH DEPOSITED IN PLASMA
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批准号:17360121
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.47万
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财政年份:2005
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负责人:SAKAI Yosuke
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依托单位:
Development of insulating system with low dielectric constant, high dielectric strength a-C:F film coated conductor prepared by plasma CVD as alternatives to SF_6
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批准号:13555077
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.77万
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财政年份:2001
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负责人:SAKAI Yosuke
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依托单位:
Basic study on decomposition of air pollutants using synergetic effect between barrier discharge and VUV light
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批准号:09555083
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.0万
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财政年份:1997
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负责人:SAKAI Yosuke
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依托单位:
Study on Optimization of Barrier Discharge Excimer-Lamp
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批准号:07558175
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$1.15万
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财政年份:1995
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负责人:SAKAI Yosuke
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依托单位:
Fundamental Studies on LID Concentration and Discharge Decomposition of Nitrogen-Dioxide
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批准号:04452159
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.39万
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财政年份:1992
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负责人:SAKAI Yosuke
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依托单位:
Studies on Production of Supercooling State and Electrical Properties of Water Condenser for Energy Compression
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批准号:01550212
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.41万
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财政年份:1989
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负责人:SAKAI Yosuke
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依托单位: