Alternative SF_6 insulation by deposition of amorphous CxFy film on electric machine conductors

通过在电机导体上沉积非晶 CxFy 薄膜来替代 SF_6 绝缘

基本信息

  • 批准号:
    15360143
  • 负责人:
  • 金额:
    $ 8.7万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2003
  • 资助国家:
    日本
  • 起止时间:
    2003 至 2004
  • 项目状态:
    已结题

项目摘要

In order to reduce the usage of SF_6 insulation gas with a high GWP (global warming potential) value, the present project proposed to use a-C : F film coated conductor prepared by RF C_8F_<18> vapor plasma method for electric power system insulation as alternatives to SF_6 gas. This project was motivated because we had experienced very high deposition rates in RF plasma if per-fluorocarbon vapors were used. The main results are summarized as follows.1.The deposition rate on Si and Al substrates was about 100-200nm/min, which is a few tens times higher than those obtained by conventional CF_4 and C_2F_6 gases.2.The a-C : F film, which is composed of C-C and C-F bonds, was excellent insulation properties (dielectric constant【approximately equal】2) with high density and good thermal strength.3.The breakdown voltages V_s of N_2, Ar and He gases between the a-C : F film coated Al electrodes were 3 times larger than those between Al ones in low p d (pressure x gap length) region. For pd<20 Torr/cm the V_s was rather higher than that of SF_6 gas.4.The decomposed species of C_8F_<18> were observed using Photo Multiple Analyzer and Quadra Pole Mass Analyzer. It was found that C_2, CF, CF_2, CF_3 and CF_5 were produced significantly. These species could contribute the chemical and electrical properties of a-C : F film, e.g.C/F ratios. Then the dielectric constant value may be changed.The present results suggest that coating of the a-C : F film on electric conductor enhances the dielectric strength of a gas insulation system.
为了减少全球升温潜能值较高的SF6绝缘气体的使用量,本课题提出采用射频C8F_4气相等离子体法制备a-C:F薄膜涂层导体<18>作为电力系统绝缘用SF6气体的替代品。这个项目的动机,因为我们经历了非常高的沉积速率,在射频等离子体中,如果使用全氟碳蒸气。主要结果如下:1.在Si和Al衬底上的沉积速率约为100- 200 nm/min,比传统的CF_4和C_2F_6气体沉积速率高几十倍。F膜,由C-C和C-F键组成,具有优异的绝缘性能(介电常数[约等于]2)具有高密度和良好的热强度。在低p-d(气压×间隙长度)区,a-C:F膜涂层Al电极间的Ar和He气体是Al电极间的3倍。当pd&lt;20 Torr/cm时,V_s比SF_6气体的V_s大得多。4.<18>用光电倍增管和四极质谱仪观察了C_8F_2的分解产物。结果表明,在2000 ~ 2005年期间,C_2、CF、CF_2、CF_3和CF_5的产生量显著增加。这些物种可以贡献a-C:F膜的化学和电学性质,例如C/F比。结果表明,在导电体上涂覆a-C:F薄膜可以提高气体绝缘系统的介电强度。

项目成果

期刊论文数量(62)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
C.Biloiu, I.A.Biloiu, Y.Sakai, Y.Suda, A.Ohta: "Amorphous fluorocarbon polymer (a-C : F) films obtained by plasma enhanced chemical vapor deposition from perfluorooctane (C_8F_<18>) vapor I : deposition, morphology, structural and chemical properties"J.Va
C.Biloiu、I.A.Biloiu、Y.Sakai、Y.Suda、A.Ohta:“通过等离子体增强化学气相沉积从全氟辛烷 (C_8F_<18>) 蒸气中获得的非晶态氟碳聚合物 (a-C : F) 薄膜 I :沉积、形态
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
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  • 通讯作者:
C.Biloiu, I.A.Biloiu, Y.Sakai, Y.Suda, A.Ohta: "Amorphous fluorocarbon polymer films prepared in perfluorooctane (C_8F_<18>) vapor plasma CVD for an application of electrical insulation"Proc.of Int.Sym.on Plasma Chemistry. 500-505 (2003)
C.Biloiu、I.A.Biloiu、Y.Sakai、Y.Suda、A.Ohta:“在全氟辛烷 (C_8F_<18>) 蒸气等离子体 CVD 中制备的非晶碳氟聚合物薄膜用于电绝缘应用”Proc.of Int.Sym。
  • DOI:
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  • 影响因子:
    0
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Amorphous fluorocarbon polymer (a-C:F) films obtained by plasma enhanced chemical vapor deposition from perfluoro-octane (C8F18) vapor I: Deposition, morphology, structural and chemical properties
  • DOI:
    10.1116/1.1624284
  • 发表时间:
    2004
  • 期刊:
  • 影响因子:
    0
  • 作者:
    C. Biloiu;I. Biloiu;Y. Sakai;Y. Suda;A. Ohta
  • 通讯作者:
    C. Biloiu;I. Biloiu;Y. Sakai;Y. Suda;A. Ohta
Deposition of low-k film on electrodes by C_8F_<18> plasma CVD and enhancement of gas breakdown voltage
C_8F_<18>等离子体CVD在电极上沉积低k薄膜并提高气体击穿电压
A.Ohta, S.Tazawa, Y.Sakai, M.A.Bratescu: "Relationship between the C_8F_<18> plasma and a-C:F film properties by PECVD"第21回プラズマプロセシング研究会論文集. 32-33 (2004)
A.Ohta、S.Tazawa、Y.Sakai、M.A.Bratescu:“PECVD 的 C_8F_<18> 等离子体与 a-C:F 薄膜特性之间的关系”第 21 届等离子体处理研究组论文集 32-33 (2004)。
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    0
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SAKAI Yosuke其他文献

SAKAI Yosuke的其他文献

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{{ truncateString('SAKAI Yosuke', 18)}}的其他基金

COMPACT AND HIGH DIELECTRIC STRENGTH OF ELECTRIC MACHINES WITH a-C:F FILM COATING OF LOW-DIELECTRIC CONSTANT AND HIGH DIELECTRIC STRENGTH DEPOSITED IN PLASMA
等离子体沉积的低介电常数和高介电强度的 a-C:F 薄膜涂层的紧凑和高介电强度电机
  • 批准号:
    17360121
  • 财政年份:
    2005
  • 资助金额:
    $ 8.7万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of insulating system with low dielectric constant, high dielectric strength a-C:F film coated conductor prepared by plasma CVD as alternatives to SF_6
开发等离子体CVD制备的低介电常数、高介电强度a-C:F薄膜涂层导体的绝缘系统作为SF_6的替代品
  • 批准号:
    13555077
  • 财政年份:
    2001
  • 资助金额:
    $ 8.7万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Basic study on decomposition of air pollutants using synergetic effect between barrier discharge and VUV light
利用屏障放电与VUV光协同作用分解空气污染物的基础研究
  • 批准号:
    09555083
  • 财政年份:
    1997
  • 资助金额:
    $ 8.7万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Study on Optimization of Barrier Discharge Excimer-Lamp
势垒放电准分子灯的优化研究
  • 批准号:
    07558175
  • 财政年份:
    1995
  • 资助金额:
    $ 8.7万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Fundamental Studies on LID Concentration and Discharge Decomposition of Nitrogen-Dioxide
二氧化氮LID浓度与排放分解的基础研究
  • 批准号:
    04452159
  • 财政年份:
    1992
  • 资助金额:
    $ 8.7万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Studies on Production of Supercooling State and Electrical Properties of Water Condenser for Energy Compression
能量压缩水冷凝器过冷状态产生及电性能研究
  • 批准号:
    01550212
  • 财政年份:
    1989
  • 资助金额:
    $ 8.7万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
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