Development of Plasma Technologies for Advanced Plasma-Based Ion Implantation Processes Using Internal-Antenna-Driven Large-Volume RF Plasma Sources

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Development of large-area and/or large-volume plasma sources with high plasma density is desired for a variety of plasma processes from microelectronics device fabrications to advanced PVD technologies including plasma-based ion implantation (PBII). The present investigations have been performed to develop meter-scale large-area RF plasma sources by inductive coupling of multiple low-inductance antenna (LIA) units, as a promising candidate for efficient high-density sources which can be applied to advanced PBII processes. Our new proposal of the unique source configuration is based on the principle of multiple and independent operation of ICP units, which allows the low-voltage plasma production with active control of power deposition profiles. 1) Discharge experiments with a meter-scale chamber resulted in high-density plasma production with densities as high as 5x10^<11>cm^<-3>. 2) It has been demonstrated that high plasma density can be obtained efficiently using the low-inductance internal antenna configuration with effectively suppressed electrostatic coupling. 3) Microstructures and properties of nanocomposite coatings have also been studied for applications to advanced surface modification processes with superhard-material coatings. 4) The LIA units are mounted on the wall of the discharge chamber and are coupled to a separated RF power source for independent and integrated control of power deposition profile, which exhibited significant improvements in the power control precision. 5) Design issues for large-area plasma sources were studied by developing numerical simulation codes (electromagnetic code, particle code and fluid code) and feasibility of novel large-area plasma sources with a scale size of 3m has been demonstrated to meet the requirements of the next-generation processes.