Development of Plasma Technologies for Advanced Plasma-Based Ion Implantation Processes Using Internal-Antenna-Driven Large-Volume RF Plasma Sources
使用内部天线驱动的大容量射频等离子体源开发先进等离子体离子注入工艺的等离子体技术
基本信息
- 批准号:13555199
- 负责人:
- 金额:$ 8.7万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2001
- 资助国家:日本
- 起止时间:2001 至 2003
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Development of large-area and/or large-volume plasma sources with high plasma density is desired for a variety of plasma processes from microelectronics device fabrications to advanced PVD technologies including plasma-based ion implantation (PBII). The present investigations have been performed to develop meter-scale large-area RF plasma sources by inductive coupling of multiple low-inductance antenna (LIA) units, as a promising candidate for efficient high-density sources which can be applied to advanced PBII processes. Our new proposal of the unique source configuration is based on the principle of multiple and independent operation of ICP units, which allows the low-voltage plasma production with active control of power deposition profiles. 1) Discharge experiments with a meter-scale chamber resulted in high-density plasma production with densities as high as 5x10^<11>cm^<-3>. 2) It has been demonstrated that high plasma density can be obtained efficiently using the low-inductance internal antenna configuration with effectively suppressed electrostatic coupling. 3) Microstructures and properties of nanocomposite coatings have also been studied for applications to advanced surface modification processes with superhard-material coatings. 4) The LIA units are mounted on the wall of the discharge chamber and are coupled to a separated RF power source for independent and integrated control of power deposition profile, which exhibited significant improvements in the power control precision. 5) Design issues for large-area plasma sources were studied by developing numerical simulation codes (electromagnetic code, particle code and fluid code) and feasibility of novel large-area plasma sources with a scale size of 3m has been demonstrated to meet the requirements of the next-generation processes.
对于从微电子器件制造到包括基于等离子体的离子注入(PBII)的先进PVD技术的各种等离子体工艺,期望开发具有高等离子体密度的大面积和/或大体积等离子体源。目前的调查已经进行了开发米级大面积RF等离子体源的电感耦合的多个低电感天线(LIA)单元,作为一个有前途的候选人,高效的高密度源,可应用于先进的PBII工艺。我们的独特源配置的新建议是基于ICP单元的多个和独立操作的原则,这允许低压等离子体生产与功率沉积曲线的主动控制。1)使用米级腔室的放电实验导致高密度等离子体产生,其密度高达5 × 10 - <11>4 cm-3<-3>。2)它已被证明,高等离子体密度可以有效地获得使用低电感的内部天线配置与有效抑制静电耦合。3)纳米复合涂层的微观结构和性能也被研究用于先进的超硬材料涂层的表面改性工艺。4)LIA单元安装在放电室的壁上,并耦合到单独的RF功率源,用于独立和集成地控制功率沉积轮廓,其在功率控制精度方面表现出显著的改善。5)通过开发数值模拟程序(电磁程序、粒子程序和流体程序)研究了大面积等离子体源的设计问题,并论证了3 m尺度的新型大面积等离子体源的可行性,以满足下一代工艺的要求。
项目成果
期刊论文数量(68)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
J.L.He, S.Miyake, Y.Setsuhara, I.Shimizu, M.Suzuki, K.Numata, H.Saito: "Improved anti-wear performance of nanostructured titanium boron nitride coatings"Wear. Vol.249. 498-502 (2001)
J.L.He、S.Miyake、Y.Setsuhara、I.Shimizu、M.Suzuki、K.Numata、H.Saito:“提高纳米结构钛氮化硼涂层的抗磨性能”。
- DOI:
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- 影响因子:0
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- 通讯作者:
S.Sugiura, Y.Setsuhara, K.Takahashi, K.Ono: "Numerical Analysis of Inductively Coupled RF Plasmas Driven by Low-Inductance Internal Antenna"Proc.20th Symposium on Plasma Processing, Nagaoka. 171-172 (2003)
S.Sugiura、Y.Setsuhara、K.Takahashi、K.Ono:“低电感内部天线驱动的电感耦合射频等离子体的数值分析”Proc.20th 等离子体处理研讨会,长冈。
- DOI:
- 发表时间:
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- 影响因子:0
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J.Musil, J.Vlcek, P.Zeman, Y.Setsuhara, S.Miyake, S.Konuma, M.Kumagai, C.Mitterer: "Morphology and Microstructure of Hard and Superhard Zr-Cu-N Nanocomposite Coatings"Jpn.J.Appl.Phys.. Vol.41. 6529-6533 (2002)
J.Musil、J.Vlcek、P.Zeman、Y.Setsuhara、S.Miyake、S.Konuma、M.Kumagai、C.Mitterer:“硬质和超硬 Zr-Cu-N 纳米复合涂层的形态和微观结构”Jpn。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
A.Ebe, Y.Setsuhara, N.Yamamoto, S.Baba, H.Inami, T.Shoji, S.Miyake: "Development of Meter-Scale Large-Area,Inductively Coupled Plasma Source with Multiple Low-Inductance Internal Antenna Units"Proc.16th International Symposium on the Plasma Chemistry, Tao
A.Ebe、Y.Setsuhara、N.Yamamoto、S.Baba、H.Inami、T.Shoji、S.Miyake:“开发具有多个低电感内部天线单元的米级大面积电感耦合等离子体源
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
J.Musil, J.Vicek, P.Zeman, Y.Setsuhara, S.Miyake, S.Konuma, M.Kumagai, C.Mitterer: "Morphology and Microstructure of Hard and Superhard Zr-Cu-N Nanocomposite Coatings"Jpn.J.Appl.Phys. 41. 6529-6533 (2002)
J.Musil、J.Vicek、P.Zeman、Y.Setsuhara、S.Miyake、S.Konuma、M.Kumagai、C.Mitterer:“硬质和超硬 Zr-Cu-N 纳米复合涂层的形态和微观结构”Jpn。
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SETSUHARA Yuichi其他文献
SETSUHARA Yuichi的其他文献
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{{ truncateString('SETSUHARA Yuichi', 18)}}的其他基金
Development of novel function-controlled inorganic/organic layer-formationtechnology through integrated reaction studies on plasma interactions withnanolayers at surface and interface
通过等离子体与表面和界面纳米层相互作用的综合反应研究,开发新型功能控制的无机/有机层形成技术
- 批准号:
23656465 - 财政年份:2011
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Development of novel plasma-enhanced processes for low-temperature formation of high quality oxide semiconductor films
开发用于低温形成高质量氧化物半导体薄膜的新型等离子体增强工艺
- 批准号:
23360325 - 财政年份:2011
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Mechanism Investigations and Control of Phonon-Excitation Anneal Process for Ultra-Shallow Junction Formation
超浅结形成的声子激发退火过程的机理研究和控制
- 批准号:
15360388 - 财政年份:2003
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of highly reactive high-density plasma sputtering process with excitation of helicon wave for synthesis of superhard nitride films
开发用于合成超硬氮化物薄膜的螺旋波激发高反应性高密度等离子体溅射工艺
- 批准号:
10558065 - 财政年份:1998
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (B)














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