Development of novel plasma-enhanced processes for low-temperature formation of high quality oxide semiconductor films

开发用于低温形成高质量氧化物半导体薄膜的新型等离子体增强工艺

• 批准号: 23360325
• 负责人: SETSUHARA Yuichi
• 金额: $ 12.15万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360325/
• 关键词: プラズマ加工; 低損傷プロセス; 反応性製膜; 半導体薄膜; 低温形成; 酸化物半導体

This research project has been carried out for development of novel plasma-enhanced processes to form high quality oxide semiconductor films at low substrate temperature using inductively coupled high-density low-damage plasma sources sustained with low-inductance antenna. The results of the present project have exhibited that good quality semiconductor films can be successfully formed at substrate temperatures as low as or lower than those acceptable for processing of a variety of polymers.

该研究项目的目的是开发新型等离子体增强工艺，使用低电感天线维持的感应耦合高密度低损伤等离子体源，在低衬底温度下形成高质量氧化物半导体薄膜。 本项目的结果表明，可以在低至或低于加工各种聚合物可接受的温度的衬底温度下成功地形成高质量的半导体薄膜。

项目成果

Yuichi Setsuhara, Yasufumi OhchiKen Cho, Kosuke Takenaka, Akinori EbePlasma-Enhanced Sputtering Assisted with ICP via New Type of Low-Induetance Antenna for Reactivity-Controlled and Low-Damage Formation of Semiconductor Films

Yuichi Setsuhara、Yasufumi OhchiKen Cho、Kosuke Takenaka、Akinori Ebe 通过新型低电感天线辅助 ICP 等离子体增强溅射，实现反应控制和低损伤的半导体薄膜形成

• 发表时间: 2012
• 作者: Yuichi Setsuhara;Yasufumi OhchiKen Cho;Kosuke Takenaka;Akinori Ebe
• 通讯作者: Akinori Ebe

Development of ICP-Enhanced Reactive Sputtering System with Multiple Low-Inductance Antenna Modules for Large-Area Deposition of Silicon Films

开发具有多个低电感天线模块的ICP增强反应溅射系统，用于大面积沉积硅膜

• 发表时间: 2012
• 作者: Yuichi Setsuhara;Kosuke Takenaka;Akinori Ebe
• 通讯作者: Akinori Ebe

Plasma-Enhanced Reactivity- Controlled Sputter Deposition Process for Low-Temperature Formation of Semiconductor Films

用于低温形成半导体薄膜的等离子体增强反应性控制溅射沉积工艺

• 发表时间: 2014
• 作者: Yuichi Setsuhara;Kosuke Takenaka;Hirofumi Ohtani;Atsuki Kanai;Soichiro Osaki
• 通讯作者: Soichiro Osaki

Plasma-Enhanced Reactive Magnetron Sputtering Assisted with Inductively Coupled Plasma for Reactivity- Controlled Deposition of Microcrystalline Silicon Thin Films

等离子体增强反应磁控溅射辅助感应耦合等离子体用于微晶硅薄膜的反应控制沉积

• DOI: 10.7567/jjap.52.11nb05
• 发表时间: 2013
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Kosuke Takenaka;Yuichi Setsuhara and Akinori Ebe
• 通讯作者: Yuichi Setsuhara and Akinori Ebe

Plasma interaction with Zn nano layer on organic materials for analysis of early stage of inorganic/organic hybrid multi-layer formation

等离子体与有机材料上的锌纳米层相互作用，用于分析无机/有机杂化多层形成的早期阶段

• DOI: 10.1016/j.surfcoat.2012.05.126
• 发表时间: 2013
• 期刊: Surface and Coatings Technology
• 影响因子: 5.4
• 作者: Ken Cho;Kosuke Takenaka;Yuichi Setsuhara
• 通讯作者: Yuichi Setsuhara