课题基金 / 基金详情

Development of novel plasma-enhanced processes for low-temperature formation of high quality oxide semiconductor films

Development of novel plasma-enhanced processes for low-temperature formation of high quality oxide semiconductor films
开发用于低温形成高质量氧化物半导体薄膜的新型等离子体增强工艺
批准号：
23360325
负责人：
SETSUHARA Yuichi
金额：
$12.15万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2011
资助国家：
日本
项目状态：
已结题
起止时间：
2011-04-01 至 2014-03-31
来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360325/
关键词：
プラズマ加工低損傷プロセス反応性製膜半導体薄膜低温形成酸化物半導体

项目摘要

项目成果

SETSUHARA Yuichi的其他基金

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中文摘要
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英文摘要
This research project has been carried out for development of novel plasma-enhanced processes to form high quality oxide semiconductor films at low substrate temperature using inductively coupled high-density low-damage plasma sources sustained with low-inductance antenna. The results of the present project have exhibited that good quality semiconductor films can be successfully formed at substrate temperatures as low as or lower than those acceptable for processing of a variety of polymers.
期刊论文(0)
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会议论文
Yuichi Setsuhara, Yasufumi OhchiKen Cho, Kosuke Takenaka, Akinori EbePlasma-Enhanced Sputtering Assisted with ICP via New Type of Low-Induetance Antenna for Reactivity-Controlled and Low-Damage Formation of Semiconductor Films
Yuichi Setsuhara、Yasufumi OhchiKen Cho、Kosuke Takenaka、Akinori Ebe 通过新型低电感天线辅助 ICP 等离子体增强溅射，实现反应控制和低损伤的半导体薄膜形成
DOI： --
发表时间： 2012
期刊：
影响因子： --
作者： [Yuichi Setsuhara, Yasufumi OhchiKen Cho, Kosuke Takenaka, Akinori Ebe]
通讯作者： Akinori Ebe
Plasma-Enhanced Reactivity- Controlled Sputter Deposition Process for Low-Temperature Formation of Semiconductor Films
用于低温形成半导体薄膜的等离子体增强反应性控制溅射沉积工艺
DOI： --
发表时间： 2014
期刊：
影响因子： --
作者： [Yuichi Setsuhara, Kosuke Takenaka, Hirofumi Ohtani, Atsuki Kanai, Soichiro Osaki]
通讯作者： Soichiro Osaki
Development of ICP-Enhanced Reactive Sputtering System with Multiple Low-Inductance Antenna Modules for Large-Area Deposition of Silicon Films
开发具有多个低电感天线模块的ICP增强反应溅射系统，用于大面积沉积硅膜
DOI： --
发表时间： 2012
期刊：
影响因子： --
作者： [Yuichi Setsuhara, Kosuke Takenaka, Akinori Ebe]
通讯作者： Akinori Ebe
Plasma-Enhanced Reactive Magnetron Sputtering Assisted with Inductively Coupled Plasma for Reactivity- Controlled Deposition of Microcrystalline Silicon Thin Films
等离子体增强反应磁控溅射辅助感应耦合等离子体用于微晶硅薄膜的反应控制沉积
DOI： 10.7567/jjap.52.11nb05
发表时间： 2013
期刊： Japanese Journal of Applied Physics
影响因子： 1.5
作者： [Kosuke Takenaka, Yuichi Setsuhara and Akinori Ebe]
通讯作者： Yuichi Setsuhara and Akinori Ebe
共 32 条
    Development of novel function-controlled inorganic/organic layer-formationtechnology through integrated reaction studies on plasma interactions withnanolayers at surface and interface
    • 批准号：
      23656465
    • 项目类别：
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额：
      $2.5万
    • 财政年份：
      2011
    • 负责人：
      SETSUHARA Yuichi
    • 依托单位：
      Osaka University
    Mechanism Investigations and Control of Phonon-Excitation Anneal Process for Ultra-Shallow Junction Formation
    Development of Plasma Technologies for Advanced Plasma-Based Ion Implantation Processes Using Internal-Antenna-Driven Large-Volume RF Plasma Sources
    • 批准号：
      13555199
    • 项目类别：
      Grant-in-Aid for Scientific Research (B)
    • 资助金额：
      $8.7万
    • 财政年份：
      2001
    • 负责人：
      SETSUHARA Yuichi
    • 依托单位：
      KYOTO UNIVERSITY
    Development of highly reactive high-density plasma sputtering process with excitation of helicon wave for synthesis of superhard nitride films
    • 批准号：
      10558065
    • 项目类别：
      Grant-in-Aid for Scientific Research (B)
    • 资助金额：
      $7.42万
    • 财政年份：
      1998
    • 负责人：
      SETSUHARA Yuichi
    • 依托单位：
      Osaka University