课题基金 / 基金详情

Development of novel function-controlled inorganic/organic layer-formationtechnology through integrated reaction studies on plasma interactions withnanolayers at surface and interface

Development of novel function-controlled inorganic/organic layer-formationtechnology through integrated reaction studies on plasma interactions withnanolayers at surface and interface
通过等离子体与表面和界面纳米层相互作用的综合反应研究,开发新型功能控制的无机/有机层形成技术
批准号:
23656465
负责人:
SETSUHARA Yuichi
金额:
$2.5万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2012

项目摘要

项目成果

SETSUHARA Yuichi的其他基金

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中文摘要
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英文摘要
This research project has been carried out to seek for breakthroughs toovercome constraints involved in plasma processes for formation of functional inorganic layeron organic layer through integrated reaction studies on plasma interactions with nanolayers atsurface and interface. The results obtained from this project have indicated feasibility of lowdamage plasma process to reduce the damage-layer thickness as thin as a few nm especiallyvia controlling the energy of ion bombardment during the reactive plasma process.
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会议论文
Plasma-Assisted Sputtering with ICP Driven by Inner-Type Low-Inductance Antenna
内置式低电感天线驱动的 ICP 等离子体辅助溅射
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [Y. Setsuhara, K. Cho, K. Takenaka, A. Ebe]
通讯作者: A. Ebe
Plasma-Enhanced Reactive Sputter Deposition with Low-Inductance Antenna for Low-Temperature Fabrication of Flexible Photovoltaic Devices
用于柔性光伏器件低温制造的低电感天线等离子体增强反应溅射沉积
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [趙 研, 節原 裕一, 竹中 弘祐, 白谷 正治, 関根 誠, 堀 勝, S. Ohara, Yuichi Setsuhara]
通讯作者: Yuichi Setsuhara
Process Control Capabilities Of Plasma-Enhanced Reactive Sputter Deposition With New Type Of Low-Inductance-Antenna Driven ICP For Large-Area Formation Of Semiconductor Films
采用新型低电感天线驱动 ICP 的等离子体增强反应溅射沉积的工艺控制能力,用于大面积形成半导体薄膜
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [Yuichi Setsuhara, Kosuke Takenaka, Hirofumi Ohtani, Akinori Ebe]
通讯作者: Akinori Ebe
DOI: --
发表时间: 2011
期刊: 高温学会誌
影响因子: --
作者: [趙 研, 節原 裕一, 竹中 弘祐, 白谷 正治, 関根 誠, 堀 勝]
通讯作者: 堀 勝
7
    Development of novel plasma-enhanced processes for low-temperature formation of high quality oxide semiconductor films
    • 批准号:
      23360325
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $12.15万
    • 财政年份:
      2011
    • 负责人:
      SETSUHARA Yuichi
    • 依托单位:
    Mechanism Investigations and Control of Phonon-Excitation Anneal Process for Ultra-Shallow Junction Formation
    Development of Plasma Technologies for Advanced Plasma-Based Ion Implantation Processes Using Internal-Antenna-Driven Large-Volume RF Plasma Sources
    • 批准号:
      13555199
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $8.7万
    • 财政年份:
      2001
    • 负责人:
      SETSUHARA Yuichi
    • 依托单位:
    Development of highly reactive high-density plasma sputtering process with excitation of helicon wave for synthesis of superhard nitride films
    • 批准号:
      10558065
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $7.42万
    • 财政年份:
      1998
    • 负责人:
      SETSUHARA Yuichi
    • 依托单位: