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Development of highly reactive high-density plasma sputtering process with excitation of helicon wave for synthesis of superhard nitride films

开发用于合成超硬氮化物薄膜的螺旋波激发高反应性高密度等离子体溅射工艺

基本信息

批准号：
10558065
负责人：
SETSUHARA Yuichi
金额：
$ 7.42万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10558065/
关键词：
Helicon plasma Highly reactive field Reactive high-density plasma Superhard nitride

项目摘要

We performed investigations on the helicon-wave excited nitrogen plasmas generated using the m=0 mode helical antenna, which was designed for the reactive sputter synthesis of superhard nitride films. The achieved plasma density in m Torr range of nitrogen gas was measured to be 1012〜1013 cm-3. Carbon nitride films were deposited by the reactive sputtering of carbon target with the helicon waveexcited high-density nitrogen plasmas. Compositional characterizations of the CN films showed that the N/C ratio of〜1.3 was achieved by depositing the CN films at plasma densities as high as lx1012 cm-3. Increase in the plasma density and/or the emission-intensity ratio of the atomic nitrogen to the molecular band in the vicinity of the substrate was found to directly contribute to the N/C composition ratio in the CN films. Structural analysis by Fourier transform infrared spectroscopy showed that the bonds associated with hydrogen impurity could be effectively eliminated by increasing the substr … More ate temperature rather than intense UV light irradiation during film growth. Nanoindentation measurements showed that the hardness values of as high as 〜20 GPa was attained. We also performed investigations on the RF circuit configurations and the discharge characteristics of internal type antennas for plasma sputtering. The RF voltage amplitude of the antenna conductor was shown to be minimized to 1/2 of the antenna terminal voltage when the impedance balance condition was met in the floating antenna regime. Furthermore, materials investigations on the stress relaxation for enhancement of the superhard nitride films were additionally performed by ion bombardment processes. Tribological and structural characterizations of the buffer layer indicated that the buffer layer control can be effective for stress relaxation, however, the peak shifts of the IR TO-phonon mode of cBN indicated the accumulation of the compressive strain with increasing film thickness could not be avoided in the superhard film growth using ion bombardment. Less

我们进行了研究的螺旋波激发的氮等离子体使用m=0模式的螺旋天线，这是专为反应溅射合成超硬氮化物薄膜。在氮气的m Torr范围内所实现的等离子体密度被测量为1012 × 1013 cm-3。采用螺旋波激发高密度氮等离子体反应溅射碳靶沉积氮化碳薄膜。CN膜的组成表征表明，N/C比为1.3的实现通过沉积CN膜在等离子体密度高达1 × 1012 cm-3。在等离子体密度和/或在衬底附近的氮原子的分子带的发射强度比的增加被发现直接有助于在CN膜中的N/C组成比。傅里叶变换红外光谱结构分析表明，通过增加底物的量，可以有效地消除与氢杂质有关的键。 ...更多信息在薄膜生长过程中，温度比强烈的紫外光照射低。纳米压痕测量结果表明，硬度值高达20 GPa。我们也进行了调查的RF电路配置和放电特性的内型天线等离子体溅射。天线导体的RF电压幅度被示出为最小化到天线端子电压的1/2时，在浮动天线制度中满足阻抗平衡条件。此外，通过离子轰击工艺，对超硬氮化物薄膜的应力弛豫增强进行了材料研究。缓冲层的摩擦学和结构表征表明，缓冲层的控制可以有效的应力松弛，然而，cBN的红外TO声子模式的峰位移表明，随着膜厚的增加，压缩应变的积累是不可避免的，在使用离子轰击的超硬薄膜生长。少