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Mechanism Investigations and Control of Phonon-Excitation Anneal Process for Ultra-Shallow Junction Formation

超浅结形成的声子激发退火过程的机理研究和控制

基本信息

批准号：
15360388
负责人：
SETSUHARA Yuichi
金额：
$ 9.66万
依托单位：
Osaka University (2004-2005)Kyoto University (2003)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

项目摘要

Formation of ultra-shallow junctions (10-30 nm) is required for fabrication of CMOS devices in next-generation ULSIs. State-of-the-art technologies for the dopant activation are based on thermal processes such as rapid thermal annealing (RTA) and laser thermal annealing with surface melting, which are constrained by the thermal budget to cause unwanted transient diffusion of the dopants into deeper region and/or in lateral direction. This research has been carried out to investigate the non-equilibrium (non-thermal) anneal processes of the implanted dopants in the shallow region by directly exciting phonons and/or interatomic bonding states as one of the effective low-temperature formation technology of the ultra-shallow junctions. Major results are summarized as follows. 1) Pomp-probe reflectivity measurements showed that the ultra-short pulse laser irradiation induced phonon vibrations followed by relaxation of the optically excited carriers, in which the phonon vibration was enhanced nonlinearly with laser intensities. 2) Cross-sectional high-resolution TEM observations confirmed successful re-crystallization of the implanted layer by the ultra-short pulse laser irradiation. 3) Sheet resistance of the implanted layer was controlled by the laser irradiation conditions, in which the sheet resistance was confirmed to show close correlation with the atomic-scale nanostructure. 4) Feasibility of the sheet resistance as low as 400 ohms/sq. was demonstrated for the 0.5-keV B implanted samples. 5) As one of the effective surface excitation processes to control defects after the laser irradiation, plasma technologies were developed for generation and control of the large-area non-equilibrium plasmas, in which feasibility of the 300-mm wafer processes was demonstrated.

下一代 ULSI 中的 CMOS 器件的制造需要形成超浅结（10-30 nm）。最先进的掺杂剂激活技术基于热工艺，例如快速热退火 (RTA) 和带有表面熔化的激光热退火，这些工艺受到热预算的限制，会导致掺杂剂不必要的瞬时扩散到更深的区域和/或横向。本研究旨在研究通过直接激发声子和/或原子间键合态在浅区注入掺杂剂的非平衡（非热）退火过程，作为超浅结的有效低温形成技术之一。主要结果总结如下。 1) 探针反射率测量表明，超短脉冲激光照射引起声子振动，随后光激发载流子弛豫，其中声子振动随激光强度非线性增强。 2) 横截面高分辨率TEM观察证实超短脉冲激光照射成功地实现了注入层的再结晶。 3）注入层的薄层电阻由激光照射条件控制，其中薄层电阻被证实与原子级纳米结构表现出密切的相关性。 4) 方块电阻低至 400 欧姆/平方的可行性。已针对 0.5 keV B 植入样品进行了演示。 5）作为控制激光辐照后缺陷的有效表面激发工艺之一，等离子体技术被开发用于大面积非平衡等离子体的产生和控制，其中证明了300毫米晶圆工艺的可行性。

项目成果

期刊论文数量（33）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Standing-Wave-Free Large-Area Inductively Coupled Plasmas with Multiple Low-Inductance Antenna Modules - Novel Plasma Technologies toward Meters-Scale FPD Processing -

具有多个低电感天线模块的无驻波大面积电感耦合等离子体 - 面向米级 FPD 处理的新型等离子体技术 -

DOI：
发表时间：
2004
期刊：
Proc.The International Union of Material Research Society - International Conference in Asia 2004 (IUMRS-ICA-2004), Hsinchu, Taiwan, November 16-18, (2004) (CDROM)
影响因子：
0
作者：
Y.Izawa;Y.Setsuahra;M.Fujita;Y.Izawa;Y.Setsuhara;Y.Setsuhara;Y.Setsuhara
通讯作者：
Y.Setsuhara

PHOTON-INDUCED PHONON EXCITATION PROCESS AS NONEQUILLIBRIUM SUBSURACE MODIFICATION OF ION-IMPLANTED NANO-SCALE LAYER FOR ULTRA-SHALLOW JUNCTION FORMATION

光子诱导声子激发过程作为离子注入纳米级层的非平衡亚表面改性以形成超浅结

DOI：
发表时间：
2003
期刊：
4th Asian-European International Conference on Plasma Surface Engineering (AEPSE 2003), Jeju, Korea, September 28-October 3
影响因子：
0
作者：
Y.Setsuhara;A.Ebe;Y.Setsuhara
通讯作者：
Y.Setsuhara

Nonequilibrium Activation of Boron-Implanted Ultra-Shallow Junctions By Femtosecond-Laser Induced Phonon Excitation Process

飞秒激光诱导声子激发过程非平衡激活硼注入超浅结

DOI：
发表时间：
2005
期刊：
4th International Conference on Silicon Epitaxy and Hetereostructures (ICSI-4), Awaji, Japan, May 23-26, (2005)
影响因子：
0
作者：
K.Takenaka;Y.Setsuhara;K.Nishisaka;A.Ebe;S.Sugiura;K.Takahashi;K.Ono;K.Takenaka;Y.Setsuhara
通讯作者：
Y.Setsuhara

次世代半導体接合形成

下一代半导体结形成