Development of Ultra-High Speed Switching Devices by Use of Carbon Nanotubes

利用碳纳米管开发超高速开关器件

• 批准号: 15360020
• 负责人: HATA Koichi
• 金额: $ 4.16万
• 依托单位: Mie University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15360020/
• 关键词: Carbon Nanotube; Adsorption and Desorption; Field Electron Emission; Photon Stimulated Desorption; Electronic Nano Devices; 光励起脱離

To develop an ultra-high speed switching device by means of molecular dynamics, fundamental properties of field electron emission from a single pentagon located at a tip end of multi-wall carbon nanotube. Current-voltage (I-V) characteristics of the pentagon with clean surface or adsorbed hydrogen molecule were measured by field emission microscopy. Switching actions with reproducibility were observed in the emission current for adsorption and desorption of a hydrogen molecule. Pulse irradiation of Nd;YAG laser with the wavelength on 532nm made possible to desorb a hydrogen molecule artificially without any damage of substrate pentagon.

用分子动力学的方法研制了一种超高速开关器件，研究了位于多壁碳纳米管顶端的单个五边形的场电子发射的基本性质。用场发射显微镜测量了表面清洁或吸附了氢分子的五边形的伏安特性。在氢分子的吸附和脱附的发射电流中观察到具有重复性的开关作用。用波长为532 nm的脉冲激光照射，在不破坏衬底五角形的情况下，使人工解吸氢分子成为可能。

项目成果

Newly developed projection microscope for evaluation of electron emission characteristics of carbon nanotube FEAs

新开发的投影显微镜用于评估碳纳米管有限元分析的电子发射特性

• 发表时间: 2005
• 期刊: Extended Abstract of The 28^<th> Fullerene-Nanotubes General Symposium 3P-46
• 作者: G.Tatsumi;K.Hata;others
• 通讯作者: others

Interference fringes observed in electron emission patterns of a multi-wall carbon nanotube

• DOI: 10.1116/1.1722133
• 发表时间: 2003-07
• 期刊: IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479)
• 作者: K. Hata;Akihiro Takakura;Kenji Miura;A. Ohshita;Yahachi Saito

畑 浩一, 齋藤弥八: "カーボンナノチューブの基礎と応用(全11章を担当)"培風館(印刷中).

Koichi Hata、Yahachi Saito：《碳纳米管的基础与应用（共 11 章）》Baifukan（出版中）。

Selective growth of carbon nanotubes on silicon protrusions

• DOI: 10.1116/1.1885008
• 发表时间: 2004-07
• 期刊: Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)
• 作者: Hideki Sato;K. Hata;H. Miyake;K. Hiramatsu;Yahachi Saito

Brightness of Electron Beam Emitted from a Single Pentagon on a Multiwall Carbon Nanotube

多壁碳纳米管上的单个五边形发射的电子束的亮度

• 发表时间: 2004
• 期刊: Surface and Interface Analysis 36
• 作者: K.Hata;A.Takakura;A.Ohshita;Y.Saito
• 通讯作者: Y.Saito